JPS6361173U - - Google Patents

Info

Publication number
JPS6361173U
JPS6361173U JP1986154856U JP15485686U JPS6361173U JP S6361173 U JPS6361173 U JP S6361173U JP 1986154856 U JP1986154856 U JP 1986154856U JP 15485686 U JP15485686 U JP 15485686U JP S6361173 U JPS6361173 U JP S6361173U
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
resonator
waveguide
fused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1986154856U
Other languages
English (en)
Other versions
JPH0514538Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986154856U priority Critical patent/JPH0514538Y2/ja
Priority to GB878723535A priority patent/GB8723535D0/en
Priority to US07/105,585 priority patent/US4862473A/en
Publication of JPS6361173U publication Critical patent/JPS6361173U/ja
Priority to GB8809835A priority patent/GB2202990B/en
Application granted granted Critical
Publication of JPH0514538Y2 publication Critical patent/JPH0514538Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)

Description

【図面の簡単な説明】
第１図はこの考案の実施例斜視図である。 １……半導体レーザ素子、１ａ……一方端部、
２……共振器、３……溝部、４……高調波発生器
、５……導波路。

Claims (1)

    【実用新案登録請求の範囲】
  1. 半導体レーザ素子の共振器と略同一断面寸法を
    有する導波路を備えた高調波発生器を、半導体レ
    ーザ素子の一方端部より所定長を有するエツチン
    グにて形成される溝部に、共振器と導波路との光
    軸を一致させて融着固定したことを特徴とする半
    導体レーザ装置。
JP1986154856U 1986-10-08 1986-10-08 Expired - Lifetime JPH0514538Y2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1986154856U JPH0514538Y2 (ja) 1986-10-08 1986-10-08
GB878723535A GB8723535D0 (en) 1986-10-08 1987-10-07 Semiconductor laser apparatus
US07/105,585 US4862473A (en) 1986-10-08 1987-10-08 Semiconductor laser apparatus having a high harmonic generating waveguide
GB8809835A GB2202990B (en) 1986-10-08 1988-04-26 Semiconductor laser device and a method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986154856U JPH0514538Y2 (ja) 1986-10-08 1986-10-08

Publications (2)

Publication Number Publication Date
JPS6361173U true JPS6361173U (ja) 1988-04-22
JPH0514538Y2 JPH0514538Y2 (ja) 1993-04-19

Family

ID=15593403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986154856U Expired - Lifetime JPH0514538Y2 (ja) 1986-10-08 1986-10-08

Country Status (3)

Country Link
US (1) US4862473A (ja)
JP (1) JPH0514538Y2 (ja)
GB (2) GB8723535D0 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2738713B2 (ja) * 1988-09-19 1998-04-08 株式会社日立製作所 第２高調波発生装置
JPH04206791A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 半導体レーザ装置
JP2805400B2 (ja) * 1991-06-14 1998-09-30 富士写真フイルム株式会社 光波長変換装置
US5390210A (en) * 1993-11-22 1995-02-14 Hewlett-Packard Company Semiconductor laser that generates second harmonic light with attached nonlinear crystal
US5363390A (en) * 1993-11-22 1994-11-08 Hewlett-Packard Company Semiconductor laser that generates second harmonic light by means of a nonlinear crystal in the laser cavity
US6239901B1 (en) * 1998-04-03 2001-05-29 Agilent Technologies, Inc. Light source utilizing a light emitting device constructed on the surface of a substrate and light conversion device that includes a portion of the substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286881A (ja) * 1985-10-14 1987-04-21 Matsushita Electric Ind Co Ltd 光出力装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3619795A (en) * 1970-04-10 1971-11-09 Bell Telephone Labor Inc Phase matching in dielectric waveguides to extend the interaction distance of harmonic generators and parametric amplifiers
JPS58378A (ja) * 1981-06-25 1983-01-05 Mitsubishi Heavy Ind Ltd プラズマジエツト溶接，切断方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286881A (ja) * 1985-10-14 1987-04-21 Matsushita Electric Ind Co Ltd 光出力装置

Also Published As

Publication number Publication date
GB8723535D0 (en) 1987-11-11
GB2202990A (en) 1988-10-05
JPH0514538Y2 (ja) 1993-04-19
GB2202990B (en) 1990-04-11
GB8809835D0 (en) 1988-06-02
US4862473A (en) 1989-08-29

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