JPS6361125U - - Google Patents

Info

Publication number

JPS6361125U

JPS6361125U JP15588286U JP15588286U JPS6361125U JP S6361125 U JPS6361125 U JP S6361125U JP 15588286 U JP15588286 U JP 15588286U JP 15588286 U JP15588286 U JP 15588286U JP S6361125 U JPS6361125 U JP S6361125U

Authority

JP

Japan

Prior art keywords

gas introduction

introduction pipe

semiconductor substrate

oxidation furnace

hydrogen gas

Prior art date

1986-10-09

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
• MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
• 229910001882 dioxygen Inorganic materials 0.000 claims description 8
• 239000007789 gas Substances 0.000 claims description 8
• 238000010438 heat treatment Methods 0.000 claims description 4
• 238000007254 oxidation reaction Methods 0.000 claims 7
• 239000000758 substrate Substances 0.000 claims 7
• 230000003647 oxidation Effects 0.000 claims 6
• 239000004065 semiconductor Substances 0.000 claims 6
• 230000001590 oxidative effect Effects 0.000 claims 1
• 239000010453 quartz Substances 0.000 claims 1
• HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
• 229910010271 silicon carbide Inorganic materials 0.000 claims 1
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1