JPS6360896B2 - - Google Patents

Info

Publication number
JPS6360896B2
JPS6360896B2 JP56000910A JP91081A JPS6360896B2 JP S6360896 B2 JPS6360896 B2 JP S6360896B2 JP 56000910 A JP56000910 A JP 56000910A JP 91081 A JP91081 A JP 91081A JP S6360896 B2 JPS6360896 B2 JP S6360896B2
Authority
JP
Japan
Prior art keywords
developer
development
absorption
metal
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56000910A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57114141A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56000910A priority Critical patent/JPS57114141A/ja
Publication of JPS57114141A publication Critical patent/JPS57114141A/ja
Publication of JPS6360896B2 publication Critical patent/JPS6360896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56000910A 1981-01-06 1981-01-06 Increasing method for developing power of developer for positive type photosensitive resin Granted JPS57114141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56000910A JPS57114141A (en) 1981-01-06 1981-01-06 Increasing method for developing power of developer for positive type photosensitive resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56000910A JPS57114141A (en) 1981-01-06 1981-01-06 Increasing method for developing power of developer for positive type photosensitive resin

Publications (2)

Publication Number Publication Date
JPS57114141A JPS57114141A (en) 1982-07-15
JPS6360896B2 true JPS6360896B2 (esLanguage) 1988-11-25

Family

ID=11486825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56000910A Granted JPS57114141A (en) 1981-01-06 1981-01-06 Increasing method for developing power of developer for positive type photosensitive resin

Country Status (1)

Country Link
JP (1) JPS57114141A (esLanguage)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182444A (ja) * 1983-04-01 1984-10-17 Sumitomo Chem Co Ltd ポジ型フオトレジストの改良現像液
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
JPS60254043A (ja) * 1984-05-30 1985-12-14 Yotsukaichi Gosei Kk ポジ型感光材料用現像剤
JP2530812B2 (ja) * 1985-12-12 1996-09-04 富士電機株式会社 高周波誘導加熱装置
WO1987004810A1 (en) * 1986-01-29 1987-08-13 Hughes Aircraft Company Method for developing poly(methacrylic anhydride) resists
JP2553048B2 (ja) * 1986-07-02 1996-11-13 三井東圧化学株式会社 レジスト膜の形成方法
US5094934A (en) * 1987-04-06 1992-03-10 Morton International, Inc. Method of developing a high contrast, positive photoresist using a developer containing alkanolamine
DE3886971T2 (de) * 1987-04-06 1994-05-19 Hoechst Celanese Corp Hochkontrastreicher Positiv-Photolack-Entwickler mit Alkanolamin.
JP2733952B2 (ja) * 1988-05-02 1998-03-30 大日本インキ化学工業株式会社 現像液組成物
JPH02151866A (ja) * 1988-11-21 1990-06-11 Macdermid Inc フォトレジスト現像液

Also Published As

Publication number Publication date
JPS57114141A (en) 1982-07-15

Similar Documents

Publication Publication Date Title
EP0023758B1 (en) Stabilised developer concentrates and developers containing a quaternary alkanol ammonium hydroxide
JPS6360896B2 (esLanguage)
JPS62102241A (ja) 感光性組成物
EP0677183A1 (en) PROCESS FOR PRODUCING A DEVELOPER HAVING A LOW LEVEL OF METAL IONS.
JPH0326380B2 (esLanguage)
KR100243709B1 (ko) 반사방지 코팅조성물
US4628023A (en) Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
US5164286A (en) Photoresist developer containing fluorinated amphoteric surfactant
US4885232A (en) High temperature post exposure baking treatment for positive photoresist compositions
TW515933B (en) Process for producing a developer containing surfactant having a very low level of metal ions
JPS5772140A (en) Photosensitive composition and formation of pattern
US4729941A (en) Photoresist processing solution with quaternary ammonium hydroxide
US6800415B2 (en) Negative-acting aqueous photoresist composition
TWI451209B (zh) 光阻圖案改良材料、形成光阻圖案之方法及製造半導體裝置之方法
EP0070624B1 (en) Novolak resin and a positive photoresist composition containing the same
EP0837369A1 (en) Pattern formation method and surface treatment agent
US20050112497A1 (en) Organic anti-reflective coating composition and method for forming photoresist pattern using the same
EP0127171B1 (en) Developing liquid for photoresist
TW201837620A (zh) 用於以極紫外光形成光敏光阻圖案的顯影劑組成物
EP1639412B1 (en) Developer composition for resists and method for formation of resist pattern
JP2006163314A (ja) レジスト用現像液
Lehar et al. Resist rehydration during thick film processing
JPS6057218B2 (ja) 半導体装置の製造方法
JP3361445B2 (ja) パターン形成方法及び表面処理剤
KR20010019928A (ko) 알칼리 처리 과정을 포함하는 포토레지스트 패턴 형성방법