JPS6360548B2 - - Google Patents
Info
- Publication number
- JPS6360548B2 JPS6360548B2 JP55081450A JP8145080A JPS6360548B2 JP S6360548 B2 JPS6360548 B2 JP S6360548B2 JP 55081450 A JP55081450 A JP 55081450A JP 8145080 A JP8145080 A JP 8145080A JP S6360548 B2 JPS6360548 B2 JP S6360548B2
- Authority
- JP
- Japan
- Prior art keywords
- output
- mosfet
- channel
- mosfetq
- well region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8145080A JPS577957A (en) | 1980-06-18 | 1980-06-18 | Cmos integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8145080A JPS577957A (en) | 1980-06-18 | 1980-06-18 | Cmos integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577957A JPS577957A (en) | 1982-01-16 |
| JPS6360548B2 true JPS6360548B2 (enrdf_load_stackoverflow) | 1988-11-24 |
Family
ID=13746732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8145080A Granted JPS577957A (en) | 1980-06-18 | 1980-06-18 | Cmos integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577957A (enrdf_load_stackoverflow) |
-
1980
- 1980-06-18 JP JP8145080A patent/JPS577957A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577957A (en) | 1982-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100302535B1 (ko) | 가변 임계 전압을 가지는 soi형 반도체 장치 및 바이어스전압발생장치 | |
| US6462611B2 (en) | Transmission gate | |
| US7804332B2 (en) | Circuit configurations having four terminal JFET devices | |
| JP2003143004A (ja) | レベルシフタ回路 | |
| US4468574A (en) | Dual gate CMOS transistor circuits having reduced electrode capacitance | |
| US6847512B2 (en) | Electrostatic breakdown prevention circuit for semiconductor device | |
| JP2006270027A (ja) | 半導体装置および相補形ｍｉｓ論理回路 | |
| KR100331417B1 (ko) | 액정 표시 장치 | |
| JPS5937585B2 (ja) | 相補性ｍｉｓ論理回路 | |
| JPS6360548B2 (enrdf_load_stackoverflow) | ||
| JP3386661B2 (ja) | 出力バッファ | |
| JP2978346B2 (ja) | 半導体集積回路装置の入力回路 | |
| US4740825A (en) | MOS semiconductor device having a low input resistance and a small drain capacitance | |
| JPH0666670B2 (ja) | 相補型ｍｏｓアナログスイッチ | |
| US6218867B1 (en) | Pass transistor circuit | |
| JPH11150449A (ja) | ヒステリシス入力回路 | |
| JPH04151870A (ja) | Ｃｍｏｓゲートアレイ | |
| KR100244287B1 (ko) | 씨모스펫 | |
| JPS6218053A (ja) | 半導体集積回路装置 | |
| JPH0257345B2 (enrdf_load_stackoverflow) | ||
| JPH0846145A (ja) | 半導体回路装置 | |
| JPS60223322A (ja) | Ｃｍｏｓ半導体集積回路装置 | |
| JPS62195922A (ja) | 半導体集積回路装置 | |
| JP2932852B2 (ja) | 半導体集積回路 | |
| JPS62120064A (ja) | 集積回路 |