JPS6360531B2 - - Google Patents
Info
- Publication number
- JPS6360531B2 JPS6360531B2 JP56075892A JP7589281A JPS6360531B2 JP S6360531 B2 JPS6360531 B2 JP S6360531B2 JP 56075892 A JP56075892 A JP 56075892A JP 7589281 A JP7589281 A JP 7589281A JP S6360531 B2 JPS6360531 B2 JP S6360531B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor device
- grooves
- mesa
- element substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 26
- 238000004070 electrodeposition Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000001962 electrophoresis Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075892A JPS57190324A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075892A JPS57190324A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57190324A JPS57190324A (en) | 1982-11-22 |
| JPS6360531B2 true JPS6360531B2 (zh) | 1988-11-24 |
Family
ID=13589416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56075892A Granted JPS57190324A (en) | 1981-05-20 | 1981-05-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57190324A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282439U (zh) * | 1988-08-10 | 1990-06-26 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008151407A (ja) * | 2006-12-18 | 2008-07-03 | Matsushita Electric Ind Co Ltd | 換気装置 |
-
1981
- 1981-05-20 JP JP56075892A patent/JPS57190324A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282439U (zh) * | 1988-08-10 | 1990-06-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57190324A (en) | 1982-11-22 |
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