JPS6360275A - Sputtering device - Google Patents

Abstract

PURPOSE:To uniformly form a thin alloy film having arbitrary composition on a base plate by arranging the base plate freely rotatably around a rotation axis in a film-forming chamber and also arranging plural targets having oblique angle respectively for the rotation axis of the base plate. CONSTITUTION:Respective base plates 4 are revolved around the rotation axis S of a revolving holder 2 under the rotation thereof and also intermittently rotated on own axes around the rotation axes (s) of the base plates 4 by a fixed gear 7. Simultaneously sputtering is performed by conducting electricity to targets 5A, 5B having oblique angle respectively for the base plates 4 from electric sources 6A, 6B. Therefor the base plates 4 are intermittently stuck with a thin alloy film in a glow discharge region. At this time, the composition of alloy of the thin film to be formed can be arbitrarily changed by reciprocating targets 5A, 5B to regulate the ratio of distances Da, Db for the center O of the base plate or regulating electric power of sputtering electric sources 6A, 6B or using both in combination.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a sputtering method used for forming alloy thin films.

[Conventional technology] Conventionally, when creating an alloy thin film using a sputtering method, the main methods are to use a 0 alloy target or to use a composite target as a target placed opposite to the film forming substrate in a chamber. It is used for. The former method involves sputtering an alloy target that has been melted to a desired composition in advance to obtain a thin film having the alloy composition on the substrate surface.

On the other hand, the latter, as illustrated in Figures 4 and 5,
A composite target T made of B is sputtered onto partially different materials, and the sputtered particles are simultaneously attached to the substrate surface to obtain a thin film with the desired alloy composition (for example, Kyoritsu Shuppan Co., Ltd. (Published; see page 124 of "Fj9 Film Formation Technology" by Kouyou and Wasa).

[Problems to be Solved by the Invention] However, all of the above film forming methods essentially change the alloy composition of the thin film to be formed on the substrate to the alloy composition or mechanical material composite ratio of the target. Since it is made to correspond as is, it is difficult to arbitrarily vary the alloy composition ratio of 11i2. In other words, in order to change the alloy composition of a thin film formed on a substrate using a conventional sputtering apparatus, there is a problem in that the target must be replaced with a Tatsumi type each time.

The present invention has been made in view of this problem, and once the target is set in the chamber, it is possible to form an alloy '1tIJ with a uniform and arbitrary composition on the substrate without the need for replacement. Forms a membrane. The purpose is to provide a new sputtering device that can be simulated.

[Means for Solving the Problems] In order to achieve the above object, the present invention provides a step in which the substrate is made at least rotatable in a film forming chamber formed in a chamber of a sputtering apparatus, that is, Two or more targets are arranged to be rotatable around the axis of the substrate, and are arranged opposite to the substrate, each having an appropriate inclination angle with respect to the axis of the substrate.

[Operation] An outline of the film forming process using the sputtering apparatus of the present invention is illustrated in FIG. That is, according to this device, while rotating the substrate 4 around its axis S, glow discharge is caused between the substrate 4 and a plurality of targets 5A, 5B diagonally facing each other. 5B is sputtered at the same time. Then, the sputtered particles from the targets 5A and 5B adhere to the substrate 4 at the same time, and if the targets 5Δ and 5B are made of different materials depending on the target alloy composition, the sputtered particles will be attached to the substrate surface. A thin film of these alloys will be formed. At this time, since each target 5A, 5B has an inclination angle with respect to the substrate 4, the amount of sputtered particles attached to the substrate surface is determined depending on the distance difference between each target 5A, 5B and the substrate 4. Although the distribution state will be different depending on the side as shown in the figure aSb, if the substrate 4 is rotated around its axis S at an appropriate angular velocity, an alloy thin film with the same composition ratio will be formed in all parts of the substrate 4. It becomes possible to form. Then, the alloy thin film formed on the substrate 4 is formed on each target 5A.
, 5B to the substrate 4 and/or
Alternatively, by using means for mutually variably adjusting the sputtering ratio, the component composition can be arbitrarily changed over a wide range.

“Example” The present invention will be described in more detail below with reference to an example shown in FIGS. 1 and 2.

FIG. 1 shows a substrate 1 and targets 5A and 5B in a film forming chamber 1 inside a chamber (not shown) of a sputtering apparatus.
It shows the arrangement status with. In this case, the apparatus has a configuration that allows film formation on a plurality of substrates 4 at the same time with one charge.

Here, a plurality of substrates 4 (the figure shows an example of four substrates for convenience, but a larger number may be used) are mounted on the lower surface of a large-diameter disk-shaped revolving holder 2 having a rotational support shaft 2a at the center. ,
They are each attached via a rotating holder 3 in the form of a small diameter disk, and are arranged at equiangular rWI intervals on a concentric circle around the axis S of the revolving holder 2. The mounting structure of each of the above-mentioned rotating holders 3 to this revolving holder 2 is as follows.

That is, each rotating holder 3 is loaded so as to fit into the recessed part 2 bl,:i & provided on the lower surface of the revolving holder 2, and the supporting shaft part 3b integrally protruded from the upper surface thereof is inserted into the recessed part 2 bl,:i& of the revolving holder 2. They are held in the revolving holder 2 so as to be freely rotatable about their respective axes S by penetrating through the shaft through holes 2c.

A gear 3a is carved on the outer peripheral surface of each of these rotating holders 3, and this gear 3a is connected to the rotating holder 2.
The gear via of the fixed gear 7 is arranged near the outer periphery on one side.
It is configured so that it engages intermittently. Substrates 4 are concentrically arranged on the lower surfaces of these rotating holders 3, respectively.

In this way, the revolving holder 2 is rotated around its rotational support shaft 2a1.
: When rotated around the axis S at an appropriate angular velocity by a connected drive source (not shown), each substrate 4 performs a revolution movement in which the axis S rotates around the axis S of the revolving holder 2. At the same time, a rotation mechanism in which the gear 3a of the rotating holder 3 and the gear 7a of the fixed gear 7 are intermittently engaged with each other allows the rotational movement of the rotating holder 3 to rotate intermittently around each axis S. The rotational phase of each substrate 4 is shifted each time it faces a predetermined film forming position (glow discharge region). Note that for the purpose of ensuring uniformity of the alloy thin film, it is useful to adjust the amount of intermittent rotation of each substrate 4 (rotating holder 3) so that the rotation phase of each substrate 4 at the film forming position is always different. be.

On the other hand, the targets 5Δ and 5B facing the substrate 4 at the lower position on one side of the revolving holder 2 are two in the illustrated example,
It is made of different materials.

These are arranged opposite to the axis S of each substrate 4 in an inclined posture having appropriate inclination angles α and β, respectively. In this case, it is advantageous in terms of sputtering efficiency and the like to set the inclination angles α and β to angles that do not interfere with the layout within the film forming chamber 1, but each can be adjusted as desired.

Then, the targets 5A and 5B are moved by a reciprocating mechanism (not shown) with respect to the center O of the substrate 4 (located on the revolution circumference of each substrate 4) at a predetermined film forming position, respectively with the arrows shown in the figure.
They are disposed so as to be adjustable in distance in the direction (2), and the figure shows an example in which one target 5A is set at a distance MDa and the other target 5B is set at different distances Db. Furthermore, these two targets 5Δ, 5B are provided with independent sputtering power supplies 6A, 6B which can control the glow/discharge power separately and can arbitrarily vary the amount of sputtering.
It is equipped with

Although not shown in the drawings, the chamber 11 that defines the film forming chamber 1 is provided with an exhaust system, a gas introduction system, etc. necessary for the sputtering apparatus.

In the sputtering apparatus configured as described above, each substrate 4 is made to revolve around the axis S under the rotation of the revolving holder 2, and at the same time, the targets 5A and 5B are rotated intermittently about the axis S. Sputtering is performed by energizing the sputtering power supplies 6A and 6B ONL. Then, the distance Q between the targets 6A and 6B is shown on the substrate 4 set in the revolving holder 2 every time the substrate 4 comes to a position exposed to the glow discharge area.
An alloy thin film is deposited intermittently at a ratio commensurate with a, Db and the amount of sputtering corresponding to the sputtering power.

At this time, the amount of sputtered particles attached to each substrate 4 is
As mentioned above, the distribution is biased depending on the positional relationship with respect to each target 5A, 5B, but since each substrate 4 rotates on its own axis and the rotational phase is shifted every time a film is periodically formed, each substrate The alloy composition of the thin film formed in step 4 is finally made uniform in each part. Then, sputtering is performed on each substrate 4 for a predetermined time while the revolving holder 2 is rotating.
Applicable.

On a plurality of substrates 4 attached to the revolving holder 2, alloy thin films having a constant composition are simultaneously and evenly formed. Then, F film is formed on these plurality of substrates 4 at the same time.
The alloy composition of the i9 film can be determined by reciprocating the targets 5A and 5B to adjust the ratio of the mutual distance MDa to SDb with respect to the substrate center 0, or by adjusting the ratio of the amount of sputtering corresponding to the power of the sputtering power sources 6A and 6B. It can be arbitrarily varied by using either or both means in combination.

As described above, as a preferred embodiment, a sputtering apparatus capable of forming films on a plurality of substrates in one direction has been described, but as already explained with reference to FIG. This method is effectively applied to the case where thin films are formed. In that case, it is not necessarily necessary to give the substrate 4 a revolution motion, and the use of the revolution holder 2 in the embodiment described above is unnecessary.

Incidentally, according to the embodiment, the tar 1 arranged at an angle: +
l-L sn viscous LQ Iln L l #-gnA
In cases where it is desired to form a composite thin film on a surface of 1 mm or less, three or more targets made of different materials may be arranged in the film forming chamber 1.Also, In the embodiment, the sputtering power source 6A for each target 5A, 5B,
Although the case where a DC power source is used for 6B is illustrated, it is of course possible to use a high frequency power source.

Further, as the mechanism for rotating the substrate 4 around its axis S, any suitable mechanism other than the one illustrated may be employed, and the mechanism for reciprocating the targets 5A, 5B may also be any arbitrary means.

[Effects of the Invention] As explained above, the present invention provides a film forming chamber for a sputtering apparatus in which a substrate rotatably arranged around an axis is
Since a plurality of targets having an inclination angle are arranged facing each other, a uniform thin alloy film having an arbitrary composition can be formed on a substrate without replacing the targets.

4. Brief explanation of aspects This is a schematic diagram of the bottom part of the gage device, and FIG. 2 is a partial plan view of FIG. 1. Figure 3 shows the film forming process according to the present invention.
FIG. 1 is an explanatory diagram. FIGS. 4 and 5 are plan views of targets showing conventional examples.

1...-film formation chamber 2...revolving holder 3...
・Rotating holder 4... Substrate 5Δ, 5B... Target 6A, 6B... Sputter power supply 7... Fixed gear

Claims (1)

[Claims] A sputtering apparatus characterized in that a substrate is arranged in a film forming chamber so as to be rotatable around an axis, and a plurality of targets are arranged facing the substrate and each having an inclination angle with respect to the axis of the substrate.