JPS63255368A - Film thickness correcting device for film forming device - Google Patents

Abstract

PURPOSE:To uniformize the thickness of the vapor deposited film on a substrate surface with a film forming device having plural evaporation sources by detaching the plural evaporation sources from the revolving shaft of a substrate holder and providing partition plates between the respective evaporation sources. CONSTITUTION:This film forming device is provided with the plural evaporation sources 4 and the rotatable substrate holder 1 mounted with the substrate 2 opposite to said sources. A spacing L is provided between the center of each evaporation source 4 of such film forming device and the revolving shaft of the holder 1 and the partition plates 3 partitioning the spacings between the respective evaporation sources 4 are so installed as to be perpendicular to the substrate 2. The above-mentioned spacing L is previously set relatively narrow so that the film thickness decreased toward the peripheral part of the substrate 2 and increases toward the center thereof in the state in which the partition plates 3 do not exist. The incident angle of the evaporated material is more limited in the central part than in the peripheral part of the rotating substrate 2 and the degree of a decrease in the film thickness of the central part increases as the length of the partition plates 3 increases. The film thickness in the diametral direction of the substrate 2 is uniformized by optimizing the height H of the partition plates 3.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to film formation*! The present invention relates to a film thickness correction device for film forming equipment, and is particularly suitable for film forming equipment such as sputtering equipment and vapor deposition equipment in which the substrate is rotated to improve uniformity. be.

[Conventional technology]

A conventional device, as described in the catalog of EI Electro Tech, is one in which a correction plate for shielding the target is provided between the magnetron target and the substrate to achieve uniformity.

Furthermore, as described in JP-A No. 59-123768, there is a method in which a plate is provided between the targets to shield the plasma, thereby stabilizing the discharge.〇 [Problem to be solved by the invention] In the above-mentioned prior art The former has a surface facing the evaporation source for film thickness correction at a distance closer to the evaporation source than the substrate, so the film thickness on this surface increases relatively quickly.
There is a problem that it easily peels off and foreign matter is easily generated. In addition, since there is no active partition between the evaporation source and the evaporation source, there is a problem in that evaporated matter from each other circulates around the evaporation source, resulting in cross-contamination that reduces the purity of the evaporation source.

In addition, in the latter method, discharge power is supplied independently to multiple targets serving as evaporation sources without rotating the substrate, and the power is controlled to obtain a multilayer film of the alloy, thereby preventing cross-contamination between the targets. Although a shielding plate was provided to prevent leakage and stabilize the plasma, no consideration was given to the uniformity of the film thickness.

An object of the present invention is to form a film that can prevent mutual contamination between evaporation sources and achieve uniform film thickness! ! The purpose of the present invention is to provide a film correcting device for film use.

[Means for solving problems]

The above object has an evaporation source, a substrate holder facing the evaporation source, and a rotation means for rotating the substrate holder, and the plurality of evaporation sources are separated from the rotation axis of the substrate holder, so that the center of the substrate is closer to the film. This is achieved by arranging the partition plates such that the thickness thereof becomes large and providing between the plurality of evaporation sources a partition plate having a surface perpendicular to the film-forming surface of the substrate.

[For production]

By providing the above-mentioned partition plates, the evaporation source is partitioned into respective spaces around the rotation axis of the substrate.

Since the surface of the partition plate is relatively far from the evaporation source and does not face the evaporation source, it is possible to reduce the amount that adheres to the surface. In addition, since the evaporation sources are separated, cross-contamination is also minimized.

At this time, the amount of eccentricity of the evaporation source from the substrate rotation axis is:

When there is no partition plate, the film thickness is thinner at the periphery of the substrate.
Also, make it relatively small so that there is a thick furrow in the center.

The distance between the edge of the partition plate and the substrate surface is small, that is,
As the length of the partition plate increases, the angle of incidence of evaporated matter is more restricted at the center of the rotating substrate than at the periphery, and the degree of decrease in film thickness at the center increases. Therefore,
By optimizing the height of the partition plate, it becomes possible to make the film thickness uniform in the radial direction of the substrate.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a diagram schematically showing a planar magnetron sputtering apparatus. 1 is a holder, 2 is a substrate, 3 is a partition plate of the present invention, and 4 is an evaporation source. The substrate 2 is attached to a holder l, which is rotatable. A plurality of evaporators #4, in the case of 2, four evaporators are arranged circumferentially at the center of the evaporators #4 with an eccentricity of L from the rotation axis of the holder I. Evaporation H4
A partition plate 3 having a height H and a surface perpendicular to the substrate surface is provided between them, radially from the rotation axis of the substrate.

FIG. 2 shows a graph of the results when film formation was performed using the apparatus having the above configuration, and uniformity of film thickness was identified. In addition, in this experiment, three targets were used as evaporation sources, and the distance from the substrate was 1501111.
It was carried out at 111. Ar pressure is IPl, eccentricity is 1
25 ma1 substrate rotation speed 10 Orpm% plasma ring diameter was 1001101. As is clear from this figure, even if the film thickness on the center side of the substrate is thicker when the partition plate 3 is not provided, by providing the partition plate 3, the film thickness is less on the center side of the substrate. Although the thickness does not increase, the film thickness on the outer periphery side increases, and the uniformity of the substrate direction is improved when a partition plate with a height of 100 mm is provided compared to when no partition plate is provided. I understand that.

FIG. 3 shows another embodiment in which the height of the partition plate 3a is changed according to the radial position of the substrate, which is more effective in correcting minute distribution shapes and achieving uniformity. There is.

Further, FIG. 4 shows an example in which an adhesion prevention plate 5 and a film thickness correction plate 6 are provided on the partition plate 3b. If the substrate is shaped like a record tablet, there is no need to form a film in the center of the substrate, and a heat shield plate 5 is provided in the corresponding area, and a fan-shaped film thickness correction plate is provided to correct the minute distribution shape. 6 was established. This makes it possible to make the film thickness uniform in the radial direction.

In this embodiment, a planar magnetron sputtering apparatus has been described, but the present invention is basically the same even if the evaporation source is an evaporation source using resistance heating.

〔Effect of the invention〕

According to the present invention, mutual contamination between evaporation sources can be prevented, and the film thickness can be made uniform.

[Brief explanation of the drawing]

Fig. 1 is a perspective view showing a film thickness correction device for a film forming apparatus which is an embodiment of the present invention, Fig. 2 is a graph showing the experimental results of film forming, and Figs. 3 and 4 show partition plates and other parts. This is a cause showing an example. -1...Holder, 2...Board, 3...
... Partition plate, 4 ... Evaporation source, 5 ...
・Distance from anti-adhesion plate, 6...Correction plate agent Patent attorney Masaru Ogawa

Claims (1)

[Claims] 1. It has a plurality of evaporation sources, a substrate holder facing the evaporation sources, and a rotating means for rotating the substrate holder, and the plurality of evaporation sources are separated from the rotation axis of the substrate holder, and the central part of the substrate is separated from the rotation axis of the substrate holder. A partition plate having a surface perpendicular to the film formation surface of the substrate is provided between the plurality of evaporation sources, and the film thickness is larger in the film formation apparatus. correction device.