JPS63255368A - Film thickness correcting device for film forming device - Google Patents
Film thickness correcting device for film forming deviceInfo
- Publication number
- JPS63255368A JPS63255368A JP8881387A JP8881387A JPS63255368A JP S63255368 A JPS63255368 A JP S63255368A JP 8881387 A JP8881387 A JP 8881387A JP 8881387 A JP8881387 A JP 8881387A JP S63255368 A JPS63255368 A JP S63255368A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film thickness
- film
- evaporation sources
- partition plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000008020 evaporation Effects 0.000 claims abstract description 34
- 238000001704 evaporation Methods 0.000 claims abstract description 34
- 238000005192 partition Methods 0.000 claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000638 solvent extraction Methods 0.000 abstract 1
- 238000012864 cross contamination Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は成膜*!F用膜圧補正装置に係り、特にスパッ
タリング装置や蒸着装置等の成膜装置において特暑こ基
板を回転させて均一性の向上を図るものに好適な成膜装
置用膜厚補正装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to film formation*! The present invention relates to a film thickness correction device for film forming equipment, and is particularly suitable for film forming equipment such as sputtering equipment and vapor deposition equipment in which the substrate is rotated to improve uniformity. be.
従来の装置は、EIectro Tech社カタログに
記載しであるように、マグネトロンターゲットと基板と
の間にターゲットを遮蔽する補正板を設けて均一化を図
ったものがある。A conventional device, as described in the catalog of EI Electro Tech, is one in which a correction plate for shielding the target is provided between the magnetron target and the substrate to achieve uniformity.
また特開昭59−123768号に記載のよう□にター
ゲット間のプラズマを遮蔽する板を設け、放電の安定化
を図ったものがある〇
〔発明が解決しようとする問題点〕
上記従来技術において、前者は基板よりも蒸発源に近い
距離で膜厚補正のための蒸発源に直面する面を有してい
るため、この面につく膜厚が比較的急速に大きくなり、
はがれ易く、異物が発生し易いという問題がある。また
蒸発源との間を積極的に仕切りていないため、お互いの
蒸発物が回り込み、蒸発源の純度を低下させるクロスコ
ンタミネーシ曽ンが発生するという問題がある。Furthermore, as described in JP-A No. 59-123768, there is a method in which a plate is provided between the targets to shield the plasma, thereby stabilizing the discharge.〇 [Problem to be solved by the invention] In the above-mentioned prior art The former has a surface facing the evaporation source for film thickness correction at a distance closer to the evaporation source than the substrate, so the film thickness on this surface increases relatively quickly.
There is a problem that it easily peels off and foreign matter is easily generated. In addition, since there is no active partition between the evaporation source and the evaporation source, there is a problem in that evaporated matter from each other circulates around the evaporation source, resulting in cross-contamination that reduces the purity of the evaporation source.
また後者においては、基板を回転させない状態で複数の
蒸発源であるターゲットに放電電力を独立に供給し、電
力を制御して合金の多層膜を得るようになっており、互
いのターゲットのクロスコンタミネーシ嘗ンの防止およ
びプラズマの安定化のために遮蔽板を設けていたが、膜
厚の均一性の点については配慮されていなかった。In addition, in the latter method, discharge power is supplied independently to multiple targets serving as evaporation sources without rotating the substrate, and the power is controlled to obtain a multilayer film of the alloy, thereby preventing cross-contamination between the targets. Although a shielding plate was provided to prevent leakage and stabilize the plasma, no consideration was given to the uniformity of the film thickness.
本発明の目的は、蒸発源間の相互汚染を防止するととも
に、膜厚の均一化を図ることのできる成膜g!!用膜用
膜正補正装置供することにある。An object of the present invention is to form a film that can prevent mutual contamination between evaporation sources and achieve uniform film thickness! ! The purpose of the present invention is to provide a film correcting device for film use.
上記目的は、蒸発源と、蒸発源に対向する基板ホルダと
、基板ホルダを回転させる回転手段とを有し、複数の蒸
発源を基板ホルダの回転軸から離し、基板の中心部の方
が膜厚が大きくなるように配置して、複数の蒸発源間に
基板の成膜面に対し垂直な面を有する仕切板を設けるこ
とにより、達成される。The above object has an evaporation source, a substrate holder facing the evaporation source, and a rotation means for rotating the substrate holder, and the plurality of evaporation sources are separated from the rotation axis of the substrate holder, so that the center of the substrate is closer to the film. This is achieved by arranging the partition plates such that the thickness thereof becomes large and providing between the plurality of evaporation sources a partition plate having a surface perpendicular to the film-forming surface of the substrate.
上記仕切板を設ける二とにより、基板の回転軸を中心に
蒸発源がそれぞれの空間に仕切られる。By providing the above-mentioned partition plates, the evaporation source is partitioned into respective spaces around the rotation axis of the substrate.
仕切板の表面は蒸発源から比較的離れており、かつ蒸発
源と対面していないので、表面に付着する量を小さくす
ることができる。また蒸発源間が仕切られるので、クロ
スコンタミネーシロンも軽微となる。Since the surface of the partition plate is relatively far from the evaporation source and does not face the evaporation source, it is possible to reduce the amount that adheres to the surface. In addition, since the evaporation sources are separated, cross-contamination is also minimized.
このとき、蒸発源の基板回転軸からの偏心量は。At this time, the amount of eccentricity of the evaporation source from the substrate rotation axis is:
仕切板がない状態において膜厚が基板の周辺部に薄く、
また中心部に厚畷なるように比較的小さめにしておく。When there is no partition plate, the film thickness is thinner at the periphery of the substrate.
Also, make it relatively small so that there is a thick furrow in the center.
仕切板の端部と基板表面との距離が小さく、すなわち、
仕切板の長さが長くなるほど自転する基板の中心部の方
が周辺部の方より蒸発物の入射角度がより制限されるた
め、中心部の膜厚の低下の度合が大きくなる。よって、
仕切板の高さを適正化することにより基板の径方向の膜
厚の均一化を図る二とが可能となる。The distance between the edge of the partition plate and the substrate surface is small, that is,
As the length of the partition plate increases, the angle of incidence of evaporated matter is more restricted at the center of the rotating substrate than at the periphery, and the degree of decrease in film thickness at the center increases. Therefore,
By optimizing the height of the partition plate, it becomes possible to make the film thickness uniform in the radial direction of the substrate.
以下、本発明の一実施例を第1図および第2図により説
明する。第1図はプレーナマグネトロンスパッタ装置の
概略を示す図である。lはホルダ、2は基板、3は本発
明の仕切板、4は蒸発源である。基板2はホルダlに装
着されており、ホルダlは回転可能である。蒸発#4の
中心はホルダlの回転軸よりLの大きさの偏心量で複数
個、二の場合は4個円周状に配置されている。蒸発H4
どうしの間に基板の回転軸から放射状に高さHの基板表
面と垂直な面を有する仕切板3を設ける。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a diagram schematically showing a planar magnetron sputtering apparatus. 1 is a holder, 2 is a substrate, 3 is a partition plate of the present invention, and 4 is an evaporation source. The substrate 2 is attached to a holder l, which is rotatable. A plurality of evaporators #4, in the case of 2, four evaporators are arranged circumferentially at the center of the evaporators #4 with an eccentricity of L from the rotation axis of the holder I. Evaporation H4
A partition plate 3 having a height H and a surface perpendicular to the substrate surface is provided between them, radially from the rotation axis of the substrate.
上記構成の装置により、成膜な行い膜厚の均一化を同定
したときのグラフを第2図に示す。なお、本実験は蒸発
源であるターゲットを3個、基板との距離150111
111にて実施した。Ar圧力はIPl、偏心量りは1
25ma1基板回転数10 Orpm% プラズマリ
ング径は1001101とした。本図より明らかなよう
に、仕切板3を設けない場合には基板中心側の膜厚が厚
くなるようにしておいても、仕切板3を設けることによ
りて、基板中心側は膜厚があまり厚くならないのに対し
、外周側の膜厚が増えて、仕切板を設けない場合に比較
し、高さ100閣の仕切板を設けた場合の方が、基板の
在方向の均一性が向上することが分かる。FIG. 2 shows a graph of the results when film formation was performed using the apparatus having the above configuration, and uniformity of film thickness was identified. In addition, in this experiment, three targets were used as evaporation sources, and the distance from the substrate was 1501111.
It was carried out at 111. Ar pressure is IPl, eccentricity is 1
25 ma1 substrate rotation speed 10 Orpm% plasma ring diameter was 1001101. As is clear from this figure, even if the film thickness on the center side of the substrate is thicker when the partition plate 3 is not provided, by providing the partition plate 3, the film thickness is less on the center side of the substrate. Although the thickness does not increase, the film thickness on the outer periphery side increases, and the uniformity of the substrate direction is improved when a partition plate with a height of 100 mm is provided compared to when no partition plate is provided. I understand that.
また第3図は他の実施例であり、仕切板3aの高さを基
板の径方向の位置に応じて変化させた例であり、微小な
分布形状を補正し均一化を図る上でより効果がある。FIG. 3 shows another embodiment in which the height of the partition plate 3a is changed according to the radial position of the substrate, which is more effective in correcting minute distribution shapes and achieving uniformity. There is.
さらに第4図は防着板5と膜厚補正板6を仕切板3bに
設けた例である。基板がレコード錠状をしている場合に
は基板の中心部には成膜する必要がなく、その相当部に
防暑板5を設け、また微少な分布形状を補正するため扇
状の膜厚補正板6を設けた。これにより、径方向の膜厚
分戸の均一化を図ることが可能となる。Further, FIG. 4 shows an example in which an adhesion prevention plate 5 and a film thickness correction plate 6 are provided on the partition plate 3b. If the substrate is shaped like a record tablet, there is no need to form a film in the center of the substrate, and a heat shield plate 5 is provided in the corresponding area, and a fan-shaped film thickness correction plate is provided to correct the minute distribution shape. 6 was established. This makes it possible to make the film thickness uniform in the radial direction.
なお1本実施例ではプレーナマグネトロンスパッタリン
グ装置について述べたが、本発明では蒸発源が抵抗加熱
による蒸発源等であっても、基本的に何ら変わることは
ない。In this embodiment, a planar magnetron sputtering apparatus has been described, but the present invention is basically the same even if the evaporation source is an evaporation source using resistance heating.
本発明によれば、蒸発源間の相互汚染を防止できるとと
もに、膜厚の均一化を図ることができるという効果があ
る。According to the present invention, mutual contamination between evaporation sources can be prevented, and the film thickness can be made uniform.
第1図は本発明の一実施例である成膜装置用膜厚補正装
置を示す斜視図、第2図は成膜の実験結果を示すグラフ
、第3図および第4図は仕切板の他の実施例を示す因で
ある。
−1・・・・・・ホルダ、2・・・・・・基板、3・・
・・・・仕切板、4・・・・・・蒸発源、5・・・・・
・防着板、6・・・・・・補正板代理人 弁理士 小
川 勝 男
オ1図
遷1反中1も・からの距離Fig. 1 is a perspective view showing a film thickness correction device for a film forming apparatus which is an embodiment of the present invention, Fig. 2 is a graph showing the experimental results of film forming, and Figs. 3 and 4 show partition plates and other parts. This is a cause showing an example. -1...Holder, 2...Board, 3...
... Partition plate, 4 ... Evaporation source, 5 ...
・Distance from anti-adhesion plate, 6...Correction plate agent Patent attorney Masaru Ogawa
Claims (1)
と、該基板ホルダを回転させる回転手段とを有し、前記
複数の蒸発源を基板ホルダの回転軸から離し、前記基板
の中心部の方が膜厚が大きくなるように配置して、前記
複数の蒸発源間に前記基板の成膜面に対し垂直な面を有
する仕切板を設けたことを特徴とする成膜装置用膜厚補
正装置。1. It has a plurality of evaporation sources, a substrate holder facing the evaporation sources, and a rotating means for rotating the substrate holder, and the plurality of evaporation sources are separated from the rotation axis of the substrate holder, and the central part of the substrate is separated from the rotation axis of the substrate holder. A partition plate having a surface perpendicular to the film formation surface of the substrate is provided between the plurality of evaporation sources, and the film thickness is larger in the film formation apparatus. correction device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8881387A JPS63255368A (en) | 1987-04-13 | 1987-04-13 | Film thickness correcting device for film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8881387A JPS63255368A (en) | 1987-04-13 | 1987-04-13 | Film thickness correcting device for film forming device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63255368A true JPS63255368A (en) | 1988-10-21 |
JPH0419302B2 JPH0419302B2 (en) | 1992-03-30 |
Family
ID=13953339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8881387A Granted JPS63255368A (en) | 1987-04-13 | 1987-04-13 | Film thickness correcting device for film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63255368A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63310965A (en) * | 1987-06-11 | 1988-12-19 | Anelva Corp | Sputtering device |
US5527438A (en) * | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
EP0837491A2 (en) * | 1996-10-21 | 1998-04-22 | Nihon Shinku Gijutsu Kabushiki Kaisha | Composite sputtering cathode assembly and sputtering apparatus with such composite sputtering cathode assembly |
JP2000133453A (en) * | 1998-10-22 | 2000-05-12 | Idemitsu Kosan Co Ltd | Organic electroluminescent element and its manufacture |
US6413392B1 (en) * | 1999-06-24 | 2002-07-02 | Nihon Shinku Gijutsu Kabushiki Kaisha | Sputtering device |
WO2013001714A1 (en) * | 2011-06-30 | 2013-01-03 | キヤノンアネルバ株式会社 | Film-forming device |
WO2013035225A1 (en) * | 2011-09-09 | 2013-03-14 | キヤノンアネルバ株式会社 | Film-forming apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6182347A (en) * | 1984-09-29 | 1986-04-25 | Nec Home Electronics Ltd | Apparatus for producing optical recording medium |
-
1987
- 1987-04-13 JP JP8881387A patent/JPS63255368A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6182347A (en) * | 1984-09-29 | 1986-04-25 | Nec Home Electronics Ltd | Apparatus for producing optical recording medium |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63310965A (en) * | 1987-06-11 | 1988-12-19 | Anelva Corp | Sputtering device |
US5527438A (en) * | 1994-12-16 | 1996-06-18 | Applied Materials, Inc. | Cylindrical sputtering shield |
EP0837491A2 (en) * | 1996-10-21 | 1998-04-22 | Nihon Shinku Gijutsu Kabushiki Kaisha | Composite sputtering cathode assembly and sputtering apparatus with such composite sputtering cathode assembly |
JP2000133453A (en) * | 1998-10-22 | 2000-05-12 | Idemitsu Kosan Co Ltd | Organic electroluminescent element and its manufacture |
US6413392B1 (en) * | 1999-06-24 | 2002-07-02 | Nihon Shinku Gijutsu Kabushiki Kaisha | Sputtering device |
WO2013001714A1 (en) * | 2011-06-30 | 2013-01-03 | キヤノンアネルバ株式会社 | Film-forming device |
JP5662575B2 (en) * | 2011-06-30 | 2015-02-04 | キヤノンアネルバ株式会社 | Deposition equipment |
US9322094B2 (en) | 2011-06-30 | 2016-04-26 | Canon Anelva Corporation | Film-forming apparatus |
WO2013035225A1 (en) * | 2011-09-09 | 2013-03-14 | キヤノンアネルバ株式会社 | Film-forming apparatus |
JP5662583B2 (en) * | 2011-09-09 | 2015-02-04 | キヤノンアネルバ株式会社 | Deposition equipment |
US9109285B2 (en) | 2011-09-09 | 2015-08-18 | Canon Anelva Corporation | Film-forming apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0419302B2 (en) | 1992-03-30 |
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