JPS6358831A - 異形基板のレジスト剥離方法および装置 - Google Patents
異形基板のレジスト剥離方法および装置Info
- Publication number
- JPS6358831A JPS6358831A JP20150986A JP20150986A JPS6358831A JP S6358831 A JPS6358831 A JP S6358831A JP 20150986 A JP20150986 A JP 20150986A JP 20150986 A JP20150986 A JP 20150986A JP S6358831 A JPS6358831 A JP S6358831A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- stripping liquid
- gas
- jet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 230000001788 irregular Effects 0.000 title 1
- 239000007788 liquid Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000000630 rising effect Effects 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20150986A JPS6358831A (ja) | 1986-08-29 | 1986-08-29 | 異形基板のレジスト剥離方法および装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20150986A JPS6358831A (ja) | 1986-08-29 | 1986-08-29 | 異形基板のレジスト剥離方法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6358831A true JPS6358831A (ja) | 1988-03-14 |
| JPH0226372B2 JPH0226372B2 (enrdf_load_stackoverflow) | 1990-06-08 |
Family
ID=16442227
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20150986A Granted JPS6358831A (ja) | 1986-08-29 | 1986-08-29 | 異形基板のレジスト剥離方法および装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6358831A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4115510A1 (de) * | 1990-05-21 | 1991-11-28 | Hamatech Halbleiter Maschinenb | Vorrichtung zur randentlackung einer substrats |
| US5443942A (en) * | 1990-11-28 | 1995-08-22 | Canon Kabushiki Kaisha | Process for removing resist |
-
1986
- 1986-08-29 JP JP20150986A patent/JPS6358831A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4115510A1 (de) * | 1990-05-21 | 1991-11-28 | Hamatech Halbleiter Maschinenb | Vorrichtung zur randentlackung einer substrats |
| US5443942A (en) * | 1990-11-28 | 1995-08-22 | Canon Kabushiki Kaisha | Process for removing resist |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0226372B2 (enrdf_load_stackoverflow) | 1990-06-08 |
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