JPS6358831A - Removal of resist from irregular shape substrate and device therefor - Google Patents
Removal of resist from irregular shape substrate and device thereforInfo
- Publication number
- JPS6358831A JPS6358831A JP20150986A JP20150986A JPS6358831A JP S6358831 A JPS6358831 A JP S6358831A JP 20150986 A JP20150986 A JP 20150986A JP 20150986 A JP20150986 A JP 20150986A JP S6358831 A JPS6358831 A JP S6358831A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- stripping liquid
- gas
- jet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 230000001788 irregular Effects 0.000 title 1
- 239000007788 liquid Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000000630 rising effect Effects 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、4角形などの非円形の異形基板の周縁に付着
したレジストを剥離する方法と、この方法の実施に直接
使用する装置とに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for peeling off resist attached to the periphery of a non-circular irregularly shaped substrate such as a square, and an apparatus directly used for carrying out this method. It is something.
(発明の背景)
半導体回路などの製造過程で、ガラスヤシリコンの基板
にレジストを塗布し、所定の回路パターンを露光手段な
どによって形成することが広く行われている。このレジ
ストを均一厚さに塗布する方式としてスピンコータが知
られている。この方式は基板を高速回転させつつ液状の
レジストを滴下し、遠心力を利用して塗布するものであ
る。しかしこのスピンコータを用いる場合には、基板の
周縁にレジストが厚く付着して残る。この周縁に付着し
たレジストは、自動化ラインにおける基板搬送時のゴミ
を発生させる原因となる。またこの周縁に残るレジスト
は他の部分よりも少し厚くなるために、露光時のフォー
カスずれの原因ともなるという問題があった。(Background of the Invention) In the process of manufacturing semiconductor circuits and the like, it is widely practiced to apply a resist to a glass or silicon substrate and form a predetermined circuit pattern using an exposure means or the like. A spin coater is known as a method for applying this resist to a uniform thickness. In this method, liquid resist is dropped while rotating the substrate at high speed, and centrifugal force is used to apply the resist. However, when this spin coater is used, a thick layer of resist remains attached to the periphery of the substrate. The resist attached to the periphery causes dust to be generated during substrate transport in an automated line. Furthermore, since the resist remaining at the periphery is a little thicker than other parts, there is a problem in that it causes defocus during exposure.
そこで従来より円形基板に対してはこのスピンコータに
より基板の回転させ、この基板周縁に剥離液を吹きかけ
て周縁に付着したレジストのみを剥離していた。しかし
この方法は角形などの非円形の基板には適用できないと
いう問題があった。Conventionally, circular substrates have been rotated using a spin coater, and a stripping solution is sprayed onto the periphery of the substrate to strip only the resist attached to the periphery. However, this method has a problem in that it cannot be applied to non-circular substrates such as square ones.
(発明の目的)
本発明はこのような事情に鑑みなされたものであり、こ
のように角形等の非円形の基板にスピンコータなどでレ
ジストを塗布した場合に、この基板周縁に付着するレジ
ストを能率良く正確に剥離することができる異形基板の
レジスト剥離方法を提供することを第1の目的とする。(Objective of the Invention) The present invention has been made in view of the above circumstances, and is intended to efficiently remove the resist that adheres to the periphery of the substrate when resist is applied to a non-circular substrate such as a square one using a spin coater or the like. A first object of the present invention is to provide a method for removing a resist from a irregularly shaped substrate, which allows for good and accurate removal of a resist.
また本発明はこの方法の実施に直接使用する装置を提供
することを第2の目的とする。A second object of the present invention is to provide an apparatus that can be used directly for carrying out this method.
(発明の構成)
本発明によれば第1の目的は、起立させた異形基板の下
縁付近の両側から斜め下方を指向して両下縁に剥離液を
噴射する一方、この剥離液の上方にN2ガスを噴射し、
前記剥離液が基板上を上昇するのを防止しつつレジスト
を剥離することを特徴とする異形基板のレジスト剥離方
法により達成される。(Structure of the Invention) According to the present invention, the first object is to spray a stripping liquid from both sides near the lower edge of an erected irregularly shaped substrate toward both lower edges in an obliquely downward direction, and to Inject N2 gas to
This is achieved by a resist stripping method for irregularly shaped substrates, characterized in that the resist is stripped while preventing the stripping liquid from rising above the substrate.
また第2の目的は、上面に基板挿入用スリットが形成さ
れた処理容器と、このスリットの下方に位置しスリット
中心線上で下方へ向って合流するようにN2ガスを噴射
する一対のガス噴出手段と、このガス噴出手段の下方に
位置し前記スリット中心線上で下方へ向って合流するよ
うに剥離液を噴射する一対の剥離液噴出手段と、前記処
理容器に設けた排気ダクトと、前記処理容器の底部に設
けた排液管とを備えることを特徴とする異形基板のレジ
スト剥離装置により達成される。The second purpose is to provide a processing container having a slit for inserting a substrate in its upper surface, and a pair of gas jetting means positioned below the slit to jet N2 gas so as to merge downward on the center line of the slit. a pair of stripping liquid spouting means located below the gas spouting means and spouting stripping liquid so as to merge downward on the slit center line; an exhaust duct provided in the processing container; This is achieved by a resist stripping apparatus for irregularly shaped substrates, which is characterized by having a drain pipe provided at the bottom of the substrate.
(実施例)
第1図は本発明の方法を示す図であり、この図において
符号lOは基板であり、この基板10の一方の面には予
めスピンコータによってレジスト12が塗布されている
。この場合前記したように基板lOの周縁には多少厚い
レジスト縁部12Aが形成される。この基板10はほぼ
垂直に起立した状態に保持されている。(Example) FIG. 1 is a diagram illustrating the method of the present invention. In this figure, reference numeral 10 indicates a substrate, and one surface of this substrate 10 is coated with a resist 12 in advance by a spin coater. In this case, as described above, a somewhat thick resist edge 12A is formed at the periphery of the substrate IO. This substrate 10 is held in an almost vertically erect state.
14.14は左右一対の剥離液噴出手段であって、基板
10の下縁とほぼ平行に配設された送液管16.16と
、各送液管16.16に設けた多数のノズル18とを備
える。各ノズル18は基板10の下縁付近の両側から斜
め下方を指向し、レジスト縁部12Aに剥離液を噴射す
る。この剥離液は使用するレジストの種類とも関係する
が、−般にはフェノールとハロゲン系有機溶剤とを主成
分とするもの、熱濃硫酸、発煙硝酸、硫酸舎過酸化水素
などが用いられている。Reference numeral 14.14 denotes a pair of left and right stripping liquid ejecting means, including a liquid feed pipe 16.16 arranged substantially parallel to the lower edge of the substrate 10, and a large number of nozzles 18 provided in each liquid feed pipe 16.16. Equipped with. Each nozzle 18 is directed diagonally downward from both sides near the lower edge of the substrate 10, and sprays stripping liquid onto the resist edge 12A. This stripping solution is related to the type of resist used, but in general, those whose main ingredients are phenol and halogenated organic solvents, hot concentrated sulfuric acid, fuming nitric acid, sulfuric acid and hydrogen peroxide, etc. are used. .
20.20は左右一対のガス噴出手段であって剥離液噴
出手段14.14の上方からレジスト縁部12A方向に
向って斜め下方にN2 (窒素)ガスを噴出する。こ
のように剥離液を斜め下向きに縁部12Aに向って噴射
すると共に、その上方から斜め下向きにN2ガスを噴射
することにより、剥離液が基板10に沿って上昇したり
、剥離液の蒸気が上昇したりして他の部分のレジス)1
2を侵蝕して悪影響を及ぼすのを防止している。この状
態で、基板10を対向する噴射手段14.14問および
20.20間で水平方向に移動させれば、レジスト12
の下縁12Aは良好に剥離され、第2.3図に示すよう
に基板10が現われる。Reference numeral 20.20 denotes a pair of left and right gas ejecting means, which ejects N2 (nitrogen) gas diagonally downward from above the stripping liquid ejecting means 14.14 toward the resist edge 12A. By injecting the stripping liquid diagonally downward toward the edge 12A and injecting the N2 gas diagonally downward from above, the stripping liquid rises along the substrate 10, and the vapor of the stripping liquid Regis of other parts by rising) 1
2 and prevents it from corroding and causing negative effects. In this state, if the substrate 10 is moved horizontally between the opposing injection means 14, 14 and 20, 20, the resist 12
The lower edge 12A of the wafer is successfully peeled off to reveal the substrate 10 as shown in FIG. 2.3.
第4.5図は他の形状に対する剥離方法を示す図である
。第4図は基板10Aの一辺が三角状に切欠かれている
場合であり、この場合にはこの三角の切欠きに沿うよう
に折曲された剥離液噴出手段14AあるいはN2ガス噴
出手段20Aを用いる。また第5図は基板10Bの下縁
のみが円弧状である場合であって、この場合には円弧に
沿うように折曲された各手段14B、20Bを用いる。FIG. 4.5 is a diagram showing a peeling method for other shapes. FIG. 4 shows a case where one side of the substrate 10A is notched in a triangular shape. In this case, a stripping liquid jetting means 14A or an N2 gas jetting means 20A bent along the triangular notch is used. . Further, FIG. 5 shows a case where only the lower edge of the substrate 10B is arcuate, and in this case, means 14B and 20B are used which are bent along the arc.
このように本発明の方法によれば円形以外の形状の基板
に対しても良好に周縁のレジストを剥離できる。As described above, according to the method of the present invention, the resist on the periphery of a substrate having a shape other than a circle can be removed well.
第6図はこの方法の実施に用いる一実施例装置の斜視図
、第7図はその平面図、第8図と第9図はその■−■線
断面図とIX−IX線断面図、また第10図はスリット
付近の拡大断面図である。FIG. 6 is a perspective view of an embodiment of the apparatus used for carrying out this method, FIG. 7 is a plan view thereof, and FIGS. 8 and 9 are cross-sectional views along the line ■-■, FIG. 10 is an enlarged sectional view of the vicinity of the slit.
第6〜9図で符号100は処理容器であり、その上面に
は基板挿入用スリット102が形成されている。このス
リブ)102の下方には前記第1図で説明したガス噴出
手段20.20と、剥離液噴出手段14.14とが設け
られている。この実施例ではガス噴出手段20は、スリ
ット102につながる開口104およびこの間口104
の周囲を囲むように上方へ凸な空間106が形成された
上板108と、この上板108の下面に固定されガス噴
出スリット110を形成する下板112とを備える。こ
れら上板108と下板112とで挟まれた空間106が
N2ガスの通路となり、この空間106には処理容器1
00上面のガス供給口114からN2ガスが供給される
。In FIGS. 6 to 9, the reference numeral 100 is a processing container, and a slit 102 for inserting a substrate is formed in the upper surface of the processing container. The gas jetting means 20.20 and the stripping liquid jetting means 14.14 described in FIG. 1 are provided below this sleeve 102. In this embodiment, the gas ejection means 20 includes an opening 104 connected to the slit 102 and an opening 104 connected to the slit 102.
, and a lower plate 112 fixed to the lower surface of the upper plate 108 and forming a gas ejection slit 110. A space 106 sandwiched between the upper plate 108 and the lower plate 112 becomes a passage for N2 gas, and the processing container 1
N2 gas is supplied from the gas supply port 114 on the top surface of the 00.
剥離液噴出手段14は前記第1図と同様に送液管16.
16と、多数のノズル18とを備える。The stripping liquid jetting means 14 is connected to the liquid feeding pipe 16 as in FIG. 1 above.
16 and a large number of nozzles 18.
116は容器100の側壁に設けた排気ダクト、118
は容器100の底部に設けた排液管である。なお120
は気液分離板であって前記下板112の周囲を囲み下方
にのびている。116 is an exhaust duct provided on the side wall of the container 100, 118
is a drain pipe provided at the bottom of the container 100. Furthermore, 120
is a gas-liquid separation plate that surrounds the lower plate 112 and extends downward.
この実施例を使用する際には、2q離液を送液管16.
16から供給する一方、ガス供給口114からN2ガス
を供給する。また排気ダクト116を排気ファン(図示
せず)に接続して剥離液の蒸気を外部に排気し、排液管
118を排液容器(図示せず)に接続しておく。When using this embodiment, 2q of synergic liquid is transferred to the liquid sending pipe 16.
On the other hand, N2 gas is supplied from the gas supply port 114. Further, the exhaust duct 116 is connected to an exhaust fan (not shown) to exhaust the vapor of the stripping liquid to the outside, and the drain pipe 118 is connected to a drain container (not shown).
この状態でスリット102から基板10を挿入し、レジ
スト縁部12Aに剥離液を当てつつスリブ)102と平
行にノズル18のピッチ相当量移動すれば、レジスト縁
部12Aのみが剥離される。この際剥離液やその蒸気は
N2ガスによって上方への流動が規制されるので、基板
10の下縁以外のレジスト12は損傷を受けることがな
い。In this state, if the substrate 10 is inserted through the slit 102 and moved parallel to the sleeve 102 by an amount equivalent to the pitch of the nozzle 18 while applying a stripping liquid to the resist edge 12A, only the resist edge 12A is peeled off. At this time, since the upward flow of the stripping liquid and its vapor is restricted by the N2 gas, the resist 12 other than the lower edge of the substrate 10 is not damaged.
このようにして基板10の一辺のレジスト縁部12Aを
剥離したら、基板lOをスリット102から抜き、他の
辺を再び挿入すればよい。After the resist edge 12A on one side of the substrate 10 is peeled off in this manner, the substrate 10 may be removed from the slit 102 and the other side may be inserted again.
なおこの際スリット102の近傍に基板10の挿入を検
出するセンサを設け、基板10を挿入した時だけ剥離液
およびN2ガスの供給を行うようにしてもよい。In this case, a sensor for detecting insertion of the substrate 10 may be provided near the slit 102, and the stripping liquid and N2 gas may be supplied only when the substrate 10 is inserted.
この実施例では容器100の底に排液管1184を設け
、容器100の底に剥離液が溜らないようにしたので、
剥離液の蒸気発生量が減り、また常時排気ダクトl16
で蒸気を排気するようにしたのでスリット102からの
蒸気の逆流を確実に防止できる。従って蒸気が基板10
の中央付近のレジスト12を傷めるおそれは一層少なく
なり、室内での使用も可能になる。In this embodiment, a drain pipe 1184 is provided at the bottom of the container 100 to prevent the stripping liquid from accumulating at the bottom of the container 100.
The amount of steam generated from the stripping liquid is reduced, and the constant exhaust duct l16
Since the steam is exhausted from the slit 102, backflow of steam from the slit 102 can be reliably prevented. Therefore, the vapor
The risk of damaging the resist 12 near the center is further reduced, and it can be used indoors.
(発明の効果)
以上のように第1の発明によれば、基板の下縁付近に斜
め下方を向って両側から剥離液を噴射し、この剥離液の
上方からこの剥離液の上昇を規制するN2ガスを噴射す
るものであるから、異形基板の縁部にできるレジスト縁
部のみが良好に剥離され、他の基板中央付近のレジスト
を傷めるおそれがない。(Effects of the Invention) As described above, according to the first invention, the stripping liquid is sprayed from both sides toward the lower edge of the substrate diagonally downward, and the rise of this stripping liquid is restricted from above. Since N2 gas is injected, only the edges of the resist formed at the edges of the irregularly shaped substrate can be removed well, and there is no risk of damaging the resist near the center of the other substrates.
また第2の発明によれば基板挿入用スリー2トから剥離
液の蒸気が外へ逆流することがなく、良好にレジスト縁
部のみを剥離できる装置が得られる。Further, according to the second aspect of the present invention, there is obtained an apparatus that can effectively strip only the resist edges without causing the vapor of the stripping liquid to flow back outward from the substrate insertion sleeve 2.
第1図は本発明の方法説明図、第2図と第3図はレジス
ト剥離後の基板下部を示す断面図と側面図、第4図と第
5図は他の形状の基板に対するガス噴出手段あるいは剥
離液噴出手段の形状を示す図、第6図は一実施例装置の
斜視図、第7図はその平面図、第8図と第9図は第7図
における■−■線断面図とIX−IX線断面図、また第
1O図はスリット付近の拡大断面図である。
10・・・基板、
12・・・レジスト、
12A・・・レジスト縁部、
14・・・剥離液噴出手段、
20・・・ガス噴出手段、
ioo・・・処理容器、
102・・・スリット。FIG. 1 is an explanatory diagram of the method of the present invention, FIGS. 2 and 3 are cross-sectional views and side views showing the lower part of the substrate after resist removal, and FIGS. 4 and 5 are gas ejection means for substrates of other shapes. Alternatively, FIG. 6 is a perspective view of an embodiment of the device, FIG. 7 is a plan view thereof, and FIGS. 8 and 9 are sectional views taken along the line ■-■ in FIG. 7. The sectional view taken along line IX-IX and FIG. 1O are enlarged sectional views of the vicinity of the slit. DESCRIPTION OF SYMBOLS 10...Substrate, 12...Resist, 12A...Resist edge, 14...Removal liquid ejection means, 20...Gas ejection means, ioo...Processing container, 102...Slit.
Claims (2)
方を指向して両下縁に剥離液を噴射する一方、この剥離
液の上方にN_2ガスを噴射し、前記剥離液が基板上を
上昇するのを防止しつつレジストを剥離することを特徴
とする異形基板のレジスト剥離方法。(1) A stripping liquid is sprayed diagonally downward from both sides near the lower edge of the upright irregularly shaped substrate, and at the same time, N_2 gas is sprayed above the stripping solution, so that the stripping solution is sprayed onto the substrate. 1. A method for removing a resist from a irregularly shaped substrate, the method comprising removing the resist while preventing the resist from rising.
と、このスリットの下方に位置しスリット中心線上で下
方へ向って合流するようにN_2ガスを噴射する一対の
ガス噴出手段と、このガス噴出手段の下方に位置し前記
スリット中心線上で下方へ向って合流するように剥離液
を噴射する一対の剥離液噴出手段と、前記処理容器に設
けた排気ダクトと、前記処理容器の底部に設けた排液管
とを備えることを特徴とする異形基板のレジスト剥離装
置。(2) A processing container in which a slit for inserting a substrate is formed on the upper surface, a pair of gas jetting means located below the slit and jetting N_2 gas so as to merge downward on the center line of the slit, and this gas a pair of stripping liquid spouting means located below the spouting means and spouting stripping liquid so as to merge downward on the center line of the slit; an exhaust duct provided in the processing container; and an exhaust duct provided at the bottom of the processing container. 1. A resist stripping device for irregularly shaped substrates, comprising: a drain pipe;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20150986A JPS6358831A (en) | 1986-08-29 | 1986-08-29 | Removal of resist from irregular shape substrate and device therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20150986A JPS6358831A (en) | 1986-08-29 | 1986-08-29 | Removal of resist from irregular shape substrate and device therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6358831A true JPS6358831A (en) | 1988-03-14 |
JPH0226372B2 JPH0226372B2 (en) | 1990-06-08 |
Family
ID=16442227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20150986A Granted JPS6358831A (en) | 1986-08-29 | 1986-08-29 | Removal of resist from irregular shape substrate and device therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6358831A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4115510A1 (en) * | 1990-05-21 | 1991-11-28 | Hamatech Halbleiter Maschinenb | Lacquer removal system for square substrate edge - uses orthogonal relative movement between substrate and soln. spray |
US5443942A (en) * | 1990-11-28 | 1995-08-22 | Canon Kabushiki Kaisha | Process for removing resist |
-
1986
- 1986-08-29 JP JP20150986A patent/JPS6358831A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4115510A1 (en) * | 1990-05-21 | 1991-11-28 | Hamatech Halbleiter Maschinenb | Lacquer removal system for square substrate edge - uses orthogonal relative movement between substrate and soln. spray |
US5443942A (en) * | 1990-11-28 | 1995-08-22 | Canon Kabushiki Kaisha | Process for removing resist |
Also Published As
Publication number | Publication date |
---|---|
JPH0226372B2 (en) | 1990-06-08 |
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