KR20090132044A - Wafer transfer robot chuck equipped with function for eliminating particles on the wafer back side - Google Patents

Wafer transfer robot chuck equipped with function for eliminating particles on the wafer back side Download PDF

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Publication number
KR20090132044A
KR20090132044A KR1020080058109A KR20080058109A KR20090132044A KR 20090132044 A KR20090132044 A KR 20090132044A KR 1020080058109 A KR1020080058109 A KR 1020080058109A KR 20080058109 A KR20080058109 A KR 20080058109A KR 20090132044 A KR20090132044 A KR 20090132044A
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South Korea
Prior art keywords
wafer
robot chuck
vacuum
gas
back side
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KR1020080058109A
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Korean (ko)
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황동민
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주식회사 동부하이텍
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Priority to KR1020080058109A priority Critical patent/KR20090132044A/en
Publication of KR20090132044A publication Critical patent/KR20090132044A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00—Manipulators not otherwise provided for
    • B25J11/0095—Manipulators transporting wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/06—Gripping heads and other end effectors with vacuum or magnetic holding means
    • B25J15/0616—Gripping heads and other end effectors with vacuum or magnetic holding means with vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A robot chuck for wafer transfer is provided, which prevents slipping of wafer by removing particle remaining on the back side of the wafer. CONSTITUTION: A robot chuck for wafer transfer comprises a wafer placing unit(140), a plurality of spray holes(170), and a gas line(160). The wafer placing unit has a vacuum line(60) and a vacuum hole(70). The wafer placing unit fixes the wafer by vacuum suction applied to the vacuum line. A plurality of spray holes are formed in the circumference of the end edge of the wafer placing unit. The gas supplied along the gas lines is sprayed to the backside surface of the wafer and removes foreign material.

Description

웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척{Wafer transfer robot chuck equipped with function for eliminating particles on the wafer back side}Wafer transfer robot chuck equipped with function for eliminating particles on the wafer back side}

본 발명은 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척에 관한 것으로서, 더욱 상세하게는 웨이퍼 이송용 로봇척의 웨이퍼 안착부 내부에 가스라인을 형성하고, 웨이퍼 안착부의 선단부 가장자리 둘레에는 가스라인과 연결된 분사홀을 형성하여, 로봇척으로 웨이퍼를 진공 흡착하기 전단계에서 가스라인을 따라서 공급된 질소가스를 분사홀을 통해 웨이퍼 뒷면을 향하도록 분사하여 웨이퍼 뒷면에 잔류하는 이물질을 제거함으로써 웨이퍼를 안정적으로 흡착하여 이송시킬 수 있도록 된 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척에 관한 것이다.The present invention relates to a wafer transfer robot chuck having a foreign material removal function on the back side of a wafer, and more particularly, a gas line is formed inside the wafer seating portion of the wafer transfer robot chuck, and a gas line is disposed around the edge of the front end of the wafer seating portion. The injection hole is connected to the robot chuck, and the nitrogen gas supplied along the gas line is sprayed toward the back side of the wafer through the injection hole in the step of vacuum-adsorbing the wafer to the robot chuck to remove foreign substances remaining on the back side of the wafer. The present invention relates to a wafer chuck robot chuck having a foreign material removal function on the back side of the wafer which can be transported by suction.

일반적으로 반도체 소자는 웨이퍼 상에 사진, 식각, 확산, 화학기상증착, 이온주입, 금속증착 등의 공정을 선택적이고도 반복적으로 수행하는 일련의 과정을 통해 이루어진다. 이렇게 반도체 소자로 제조되기까지 웨이퍼는 카세트에 복수개씩 탑재되어 각 공정을 수행하는 각각의 제조설비로 이송되고, 이들 웨이퍼는 각 공정 을 수행하는 반도체 제조설비 내에서도 그 내부에 설치된 로봇척에 의해 일매씩 인출되어 요구되는 위치로 이송되는 과정을 거치게 된다.In general, a semiconductor device is a series of processes that selectively and repeatedly perform a process such as photographing, etching, diffusion, chemical vapor deposition, ion implantation, metal deposition on a wafer. Thus, until the semiconductor device is manufactured, a plurality of wafers are mounted in a cassette and transferred to respective manufacturing facilities that perform each process, and these wafers are moved one by one by a robot chuck installed therein within the semiconductor manufacturing equipment that performs each process. Withdrawal is carried out to the required position.

도 1은 종래 웨이퍼 이송용 로봇척의 사시도이고, 도 2는 종래 웨이퍼의 뒷면에 이물질이 잔류하는 상태에서 로봇척에 웨이퍼가 안착되는 모습을 나타낸 측면도로서, (a)는 로봇척이 웨이퍼의 하측에 위치된 모습, (b)는 웨이퍼 뒷면의 이물질로 인하여 로봇척에 웨이퍼가 들뜬 상태로 안착된 모습을 나타낸다.Figure 1 is a perspective view of a conventional wafer transfer robot chuck, Figure 2 is a side view showing a state that the wafer is seated on the robot chuck in the state that foreign matter remains on the back of the conventional wafer, (a) is a robot chuck on the lower side of the wafer Positioned, (b) shows the state that the wafer is seated in the excited state due to the foreign matter on the back of the wafer.

종래의 웨이퍼 이송용 로봇척(10)은, 상기 로봇척(10)을 회전시키는 회전구동부(미도시)와 결합되는 연결부(20)와, 상기 연결부(20)에서 연장 형성되는 지지부(30)와, 상기 지지부(30)에서 연장 형성되고 웨이퍼(1)가 탑재된 카세트(미도시)의 슬롯(slot) 사이로 삽입가능하도록 얇은 두께로 형성되며 그 상면에는 웨이퍼(1)의 뒷면이 접촉되어 안착되는 웨이퍼 안착부(40)로 구성된다. 또한, 상기 웨이퍼 안착부(40)의 선단부(50) 중앙에는 진공홀(70)이 형성되어 있고, 상기 웨이퍼 안착부(40)의 내부에는 상기 진공홀(70)에 연결된 진공라인(60)이 형성되어 있다.The conventional wafer transfer robot chuck 10 includes a connection part 20 coupled to a rotation driving part (not shown) for rotating the robot chuck 10, and a support part 30 extending from the connection part 20. It is formed in a thin thickness extending from the support portion 30 to be inserted between the slot (slot) of the cassette (not shown) on which the wafer 1 is mounted, the upper surface of the wafer 1 is contacted and seated It consists of the wafer seating part 40. In addition, a vacuum hole 70 is formed at the center of the front end portion 50 of the wafer seating part 40, and a vacuum line 60 connected to the vacuum hole 70 is formed in the wafer seating part 40. Formed.

상기 로봇척(10)을 이용하여 웨이퍼(1)를 진공 흡착하는 과정에서, 웨이퍼(1)의 뒷면은 웨이퍼 안착부(40)의 상면에 접촉하여 안착되며, 이 때 상기 웨이퍼(1) 뒷면의 중앙부는 상기 진공홀(70)의 상측에 위치하게 되며, 상기 진공홀(70)을 통한 진공의 흡입력에 의해 상기 웨이퍼(1)는 웨이퍼 안착부(40)에 고정된다. In the process of vacuum-adsorbing the wafer 1 using the robot chuck 10, the rear surface of the wafer 1 is placed in contact with the upper surface of the wafer seating portion 40, and at this time, the rear surface of the wafer 1 The central part is located above the vacuum hole 70, and the wafer 1 is fixed to the wafer seating part 40 by the suction force of the vacuum through the vacuum hole 70.

그러나, 웨이퍼(1)의 뒷면에 파티클 등의 이물질(5)이 잔류하고 있는 경우에는 웨이퍼(1)가 웨이퍼 안착부(40)에 수평으로 흡착되지 못하고 들뜬 상태로 안착됨으로써 오정렬로 인한 미끄러짐 등의 공정사고가 유발되는 문제점이 있다.However, when foreign matters 5 such as particles remain on the back surface of the wafer 1, the wafer 1 is not excited horizontally to the wafer seating portion 40 and is seated in an excited state, such as slippage due to misalignment. There is a problem that causes a fair accident.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 로봇척으로 웨이퍼를 진공 흡착하기 전단계에서 웨이퍼 뒷면에 잔류하는 파티클 등의 이물질을 사전에 제거함으로써 웨이퍼 뒷면에 이물질이 잔류할 경우에 초래될 수 있는 웨이퍼의 불안정한 이송에 따른 공정사고를 예방할 수 있도록 하는 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척을 제공함에 그 목적이 있다.The present invention has been made to solve the above problems, it will be caused when foreign matter remains on the back side of the wafer by removing the foreign matter such as particles remaining on the back side of the wafer in advance before vacuum suction the wafer with the robot chuck. It is an object of the present invention to provide a robot chuck for wafer transfer with a foreign material removal function on the back side of the wafer to prevent a process accident due to unstable transfer of the wafer.

상술한 바와 같은 목적을 구현하기 위한 본 발명의 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척은, 선단부에는 진공홀이 형성되고, 내부에는 상기 진공홀과 연결되는 진공라인이 형성되어, 상기 진공라인으로 인가된 진공에 의한 흡입으로 상측에 위치된 웨이퍼를 흡착 고정하는 웨이퍼 안착부를 포함하는 웨이퍼 이송용 로봇척에 있어서, 상기 웨이퍼 안착부의 선단부 가장자리의 둘레에는 상측이 개방된 복수의 분사홀이 형성되고, 상기 웨이퍼 안착부의 내부에는 상기 분사홀에 연결되는 가스라인이 형성되어, 상기 가스라인을 따라서 공급되는 가스가 상기 분사홀을 통해 상기 웨이퍼의 뒷면을 향하여 분사되도록 하여 상기 웨이퍼 뒷면에 잔류하는 이물질을 제거하도록 된 것을 특징으로 한다.The robot chuck for wafer transfer with a foreign material removal function on the back surface of the wafer for realizing the object as described above, a vacuum hole is formed at the front end portion, a vacuum line connected to the vacuum hole is formed therein, A wafer transfer robot chuck comprising a wafer seating portion for adsorbing and fixing a wafer positioned on the upper side by suction by a vacuum applied to the vacuum line, wherein the plurality of injection holes having an upper side opened around a periphery of an edge of the wafer seating portion Is formed, and a gas line connected to the injection hole is formed inside the wafer seating portion, so that the gas supplied along the gas line is injected toward the back side of the wafer through the injection hole and remains on the back side of the wafer. It is characterized in that to remove the foreign matter.

상기 분사홀은 상기 진공홀을 중심으로 하여 동일한 간격으로 이격된 지점에 상호 일정한 간격으로 배치되어 있는 것을 특징으로 한다.The injection holes are disposed at regular intervals from each other at points spaced apart at equal intervals with respect to the vacuum hole.

상기 분사홀은 상기 웨이퍼 안착부의 선단부 상면에 수직방향으로 관통 형성 되어, 상기 분사홀을 통해 가스가 수직 상방향으로 분사되는 것을 특징으로 한다.The injection hole is formed in the vertical direction through the top surface of the distal end portion of the wafer seating portion, it characterized in that the gas is injected vertically through the injection hole.

상기 가스는 질소가스가 사용되는 것을 특징으로 한다.The gas is characterized in that nitrogen gas is used.

본 발명에 따른 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척에 의하면, 진공에 의한 웨이퍼의 흡착 전단계에서 웨이퍼 안착부의 선단부에 형성된 분사홀을 통해 질소가스를 웨이퍼 뒷면을 향하여 분사시켜 웨이퍼 뒷면에 잔류하는 파티클 등의 이물질을 사전에 제거함으로써 웨이퍼 이송시 웨이퍼의 미끄럼 이탈 사고로 인해 발생할 수 있는 웨이퍼 품질 저하를 방지하고, 웨이퍼의 진공 흡착의 불량 발생을 방지하여 장비 가동율을 향상시킬 수 있는 장점이 있다.According to the wafer transfer robot chuck having the foreign matter removal function of the back side of the wafer according to the present invention, nitrogen gas is injected toward the back side of the wafer through the injection hole formed in the front end portion of the wafer seating portion in the step of adsorbing the wafer by vacuum. By removing foreign substances such as particles remaining in the wafer in advance, it is possible to prevent the wafer quality deterioration that may occur due to the slipping of the wafer during wafer transfer, and to improve the equipment operation rate by preventing the occurrence of poor vacuum adsorption of the wafer. There is this.

이하 첨부한 도면을 참조하여 본 발명의 바람직한 실시예에 대한 구성 및 작용을 상세히 설명하면 다음과 같다.Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명에 따른 웨이퍼 이송용 로봇척의 사시도이고, 도 4는 본 발명에 따른 웨이퍼 이송용 로봇척을 이용하여 웨이퍼 뒷면에 질소가스가 분사되는 모습을 나타낸 사용상태도이다.Figure 3 is a perspective view of the robot chuck for wafer transfer according to the present invention, Figure 4 is a state diagram showing the state in which nitrogen gas is injected to the back of the wafer using the wafer transfer robot chuck according to the present invention.

도 3과 도 4에 도시된 연결부(120), 지지부(130), 진공라인(60), 진공홀(70)은 종래의 구성요소와 동일한 기능을 가진 것이므로 이에 대한 상세한 설명은 생략하고, 본 발명에서 새롭게 부가된 구성요소를 중심으로 상세히 설명하도록 한다.3 and 4, the connection part 120, the support part 130, the vacuum line 60, and the vacuum hole 70 have the same functions as the conventional components, and thus a detailed description thereof will be omitted. In the following description, the newly added component will be described in detail.

본 발명에 따른 웨이퍼 이송용 로봇척(100)은, 웨이퍼 안착부(140)와 그 선단부(150)의 내부에 진공라인(60)과 별도의 가스라인(160)이 형성되고, 상기 선단 부(150)의 가장자리 둘레에는 상기 가스라인(160)에 연결된 분사홀(170)이 형성된 구조로 되어 있다.In the wafer transfer robot chuck 100 according to the present invention, a vacuum line 60 and a gas line 160 are formed inside the wafer seating portion 140 and its tip portion 150, and the tip portion ( Around the edge of the 150 is a structure in which the injection hole 170 connected to the gas line 160 is formed.

상기 가스라인(160)은 진공라인(60)의 하측에 별도로 추가 설치된 것으로서, 상기 가스라인(160)은 질소저장부(미도시)와 상기 분사홀(170)을 연결하게 되며, 상기 질소저장부와 상기 가스라인(160) 사이에는 질소가스의 공급량 조절을 위한 밸브(미도시)가 설치될 수 있다.The gas line 160 is additionally installed at a lower side of the vacuum line 60, and the gas line 160 connects a nitrogen storage unit (not shown) and the injection hole 170 to the nitrogen storage unit. Between the and the gas line 160 may be installed a valve (not shown) for adjusting the supply amount of nitrogen gas.

상기 웨이퍼 안착부(140)의 선단부(150)에 형성된 분사홀(170)은 진공홀(70)을 중심으로 하여 그 둘레에 동일한 간격으로 이격된 지점에 복수개로 형성되고, 상기 복수의 분사홀(170)은 상호간에 일정한 간격으로 배치하여 질소가스가 웨이퍼(1)의 뒷면에 골고루 분사될 수 있도록 구성함이 바람직하다.The injection holes 170 formed in the tip portion 150 of the wafer seating part 140 are formed in plural points at spaced intervals around the vacuum hole 70 at equal intervals, and the plurality of injection holes ( 170 is preferably arranged at regular intervals so that the nitrogen gas can be evenly sprayed on the back of the wafer (1).

또한, 상기 분사홀(170)은 동심원의 다층 형태로 구성될 수도 있을 것이다.In addition, the injection hole 170 may be configured in a concentric multi-layered form.

상기 복수의 분사홀(170)은 상기 가스라인(160)에 공통적으로 연결되고, 상기 분사홀(170)은 상기 웨이퍼 안착부(140)의 상면에 수직방향으로 관통 형성되어 질소가스가 수직 상방향으로 분사되도록 유도함으로써, 상기 분사홀(170)을 통해 질소가스가 웨이퍼(1)의 뒷면을 향하여 분사될 때 상기 질소가스와 웨이퍼(1) 뒷면간의 충돌로 인하여 상기 웨이퍼(1)가 측방향으로 밀려나는 현상을 최소화할 수 있도록 구성됨이 바람직하다.The plurality of injection holes 170 are commonly connected to the gas line 160, and the injection holes 170 penetrate through the upper surface of the wafer seating part 140 in a vertical direction so that nitrogen gas is vertically upward. By injecting the gas into the back of the wafer 1 due to the collision between the nitrogen gas and the back of the wafer 1 when the nitrogen gas is injected toward the back of the wafer 1. It is desirable to be configured to minimize the phenomenon of being pushed back.

상기와 같은 구성을 갖는 본 발명의 웨이퍼 이송용 로봇척(100)을 이용하여 웨이퍼(1) 뒷면의 이물질을 제거하여 이송시키는 과정을 살펴보면 다음과 같다.Looking at the process of removing the foreign matter on the back of the wafer (1) using the wafer transfer robot chuck 100 of the present invention having the configuration as described above is as follows.

우선, 로봇척(100)의 웨이퍼 안착부(140)가 웨이퍼(1)의 하측에 소정거리 이 격되도록 위치시킨다.First, the wafer seating portion 140 of the robot chuck 100 is positioned below the wafer 1 so as to be spaced a predetermined distance apart.

이러한 상태에서 상기 질소저장부에 저장되어 있던 질소는 가스라인(160)을 따라서 공급되고, 상기 가스라인(160)에 연결된 분사홀(170)을 통해 질소가스를 웨이퍼(1) 뒷면을 향하여 분사시켜 상기 웨이퍼(1) 뒷면에 잔류하는 파티클 등의 이물질을 불어내어 제거하게 된다.In this state, the nitrogen stored in the nitrogen storage unit is supplied along the gas line 160, and the nitrogen gas is injected toward the rear surface of the wafer 1 through the injection hole 170 connected to the gas line 160. The foreign substances such as particles remaining on the back surface of the wafer 1 are blown out.

상기 질소가스의 분사는 상기 로봇척(100)을 이용한 웨이퍼(1)의 진공 흡착이 진행되기 전단계에서 약 1초 정도의 단시간 동안 진행된다.The injection of the nitrogen gas is performed for a short time of about 1 second in a step before vacuum adsorption of the wafer 1 using the robot chuck 100 is performed.

본 발명의 실시로 웨이퍼(1) 뒷면의 이물질을 제거한 상태에서는 웨이퍼 안착부(140)와 웨이퍼(1) 뒷면이 밀착된 상태로 접촉되므로, 진공의 인가로 웨이퍼(1)를 흡착 고정함에 있어서 웨이퍼(1)의 미끄러짐에 의한 이탈을 방지할 수 있게 되어 웨이퍼(1)의 안정적인 이송이 가능해진다.In the embodiment of the present invention, since the foreign matter on the back side of the wafer 1 is removed, the wafer seating portion 140 and the back side of the wafer 1 come into close contact with each other. It is possible to prevent the detachment caused by the slippage of (1), thereby enabling stable conveyance of the wafer (1).

본 발명은 상기 실시예에 한정되지 않고 본 발명의 기술적 요지를 벗어나지 아니하는 범위 내에서 다양하게 수정·변형되어 실시될 수 있음은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 있어서 자명한 것이다.It is apparent to those skilled in the art that the present invention is not limited to the above embodiments and can be practiced in various ways without departing from the technical spirit of the present invention. will be.

도 1은 종래 웨이퍼 이송용 로봇척의 사시도,1 is a perspective view of a robot chuck for a conventional wafer transfer;

도 2는 종래 웨이퍼의 뒷면에 이물질이 잔류하는 상태에서 로봇척에 웨이퍼가 안착되는 모습을 나타낸 측면도,2 is a side view showing a state in which a wafer is seated on a robot chuck in a state in which foreign matter remains on a rear surface of a conventional wafer;

도 3은 본 발명에 따른 웨이퍼 이송용 로봇척의 사시도,3 is a perspective view of a robot chuck for wafer transfer according to the present invention;

도 4는 본 발명에 따른 웨이퍼 이송용 로봇척을 이용하여 웨이퍼 뒷면에 질소가스가 분사되는 모습을 나타낸 사용상태도이다.Figure 4 is a state diagram showing the use of the nitrogen gas is sprayed on the back of the wafer using the wafer transfer robot chuck in accordance with the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

1 : 웨이퍼 5 : 이물질1: wafer 5: foreign matter

10,100 : 로봇척 20,120 : 연결부10,100: robot chuck 20,120: connection

30,130 : 지지부 40,140 : 웨이퍼 안착부30,130: support portion 40,140: wafer seating portion

50,150 : 선단부 60 : 진공라인50,150: Tip 60: Vacuum Line

70 : 진공홀 160 : 가스라인70: vacuum hole 160: gas line

170 : 분사홀170: injection hole

Claims (4)

선단부에는 진공홀이 형성되고, 내부에는 상기 진공홀과 연결되는 진공라인이 형성되어, 상기 진공라인으로 인가된 진공에 의한 흡입으로 상측에 위치된 웨이퍼를 흡착 고정하는 웨이퍼 안착부를 포함하는 웨이퍼 이송용 로봇척에 있어서,A vacuum hole is formed at the front end, and a vacuum line connected to the vacuum hole is formed therein, and includes a wafer seating part for adsorbing and fixing a wafer positioned on the upper side by suction by a vacuum applied to the vacuum line. In the robot chuck, 상기 웨이퍼 안착부의 선단부 가장자리의 둘레에는 상측이 개방된 복수의 분사홀이 형성되고, 상기 웨이퍼 안착부의 내부에는 상기 분사홀에 연결되는 가스라인이 형성되어, 상기 가스라인을 따라서 공급되는 가스가 상기 분사홀을 통해 상기 웨이퍼의 뒷면을 향하여 분사되도록 하여 상기 웨이퍼 뒷면에 잔류하는 이물질을 제거하도록 된 것을 특징으로 하는 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척.A plurality of injection holes having an open upper side are formed around the edge of the front end of the wafer seating portion, and a gas line connected to the injection hole is formed in the wafer seating portion, so that the gas supplied along the gas line is injected. The robot chuck for wafer transport with a foreign material removal function of the back side of the wafer, characterized in that to be injected toward the back side of the wafer through a hole to remove the foreign matter remaining on the back side of the wafer. 제1항에 있어서, 상기 분사홀은 상기 진공홀을 중심으로 하여 동일한 간격으로 이격된 지점에 상호 일정한 간격으로 배치되어 있는 것을 특징으로 하는 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척.According to claim 1, The injection hole is a wafer transfer robot chuck with a foreign material removal function on the back of the wafer, characterized in that disposed at a predetermined interval from each other at the same spaced intervals around the vacuum hole. 제1항에 있어서, 상기 분사홀은 상기 웨이퍼 안착부의 선단부 상면에 수직방향으로 관통 형성되어, 상기 분사홀을 통해 가스가 수직 상방향으로 분사되는 것을 특징으로 하는 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척.The method of claim 1, wherein the injection hole is formed in the vertical direction through the upper surface of the front end of the wafer seating portion, the gas having a foreign matter removal function on the back of the wafer, characterized in that the gas is injected vertically through the injection hole. Robot chuck for wafer transfer. 제1항에 있어서, 상기 가스는 질소가스가 사용되는 것을 특징으로 하는 웨이퍼 뒷면의 이물질 제거 기능을 구비한 웨이퍼 이송용 로봇척.According to claim 1, The gas is a wafer transport robot chuck having a foreign material removal function on the back of the wafer, characterized in that the use of nitrogen gas.
KR1020080058109A 2008-06-20 2008-06-20 Wafer transfer robot chuck equipped with function for eliminating particles on the wafer back side KR20090132044A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9721801B2 (en) 2012-02-03 2017-08-01 Samsung Electronics Co., Ltd. Apparatus and a method for treating a substrate
CN116344434A (en) * 2023-05-11 2023-06-27 广东鸿浩半导体设备有限公司 Rapid dust removal and transfer method after laser de-bonding and sheet taking manipulator
KR102678357B1 (en) 2023-01-25 2024-06-27 (주)텍슨 Apparatus for transmitting wafers and equipment for manufacturing semiconductor device having the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9721801B2 (en) 2012-02-03 2017-08-01 Samsung Electronics Co., Ltd. Apparatus and a method for treating a substrate
KR102678357B1 (en) 2023-01-25 2024-06-27 (주)텍슨 Apparatus for transmitting wafers and equipment for manufacturing semiconductor device having the same
CN116344434A (en) * 2023-05-11 2023-06-27 广东鸿浩半导体设备有限公司 Rapid dust removal and transfer method after laser de-bonding and sheet taking manipulator
CN116344434B (en) * 2023-05-11 2023-08-25 广东鸿浩半导体设备有限公司 Rapid dust removal and transfer method after laser de-bonding and sheet taking manipulator

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