JPS6357938B2 - - Google Patents

Info

Publication number
JPS6357938B2
JPS6357938B2 JP57146625A JP14662582A JPS6357938B2 JP S6357938 B2 JPS6357938 B2 JP S6357938B2 JP 57146625 A JP57146625 A JP 57146625A JP 14662582 A JP14662582 A JP 14662582A JP S6357938 B2 JPS6357938 B2 JP S6357938B2
Authority
JP
Japan
Prior art keywords
crucible
substrate
anode ring
evaporated material
semiconductor thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57146625A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5935420A (ja
Inventor
Tomonobu Hata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOON DENKI KK
Original Assignee
KOON DENKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOON DENKI KK filed Critical KOON DENKI KK
Priority to JP57146625A priority Critical patent/JPS5935420A/ja
Publication of JPS5935420A publication Critical patent/JPS5935420A/ja
Publication of JPS6357938B2 publication Critical patent/JPS6357938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/22—

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57146625A 1982-08-23 1982-08-23 半導体薄膜形成方法 Granted JPS5935420A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57146625A JPS5935420A (ja) 1982-08-23 1982-08-23 半導体薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57146625A JPS5935420A (ja) 1982-08-23 1982-08-23 半導体薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS5935420A JPS5935420A (ja) 1984-02-27
JPS6357938B2 true JPS6357938B2 (OSRAM) 1988-11-14

Family

ID=15411963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57146625A Granted JPS5935420A (ja) 1982-08-23 1982-08-23 半導体薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS5935420A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3413891C2 (de) * 1984-04-12 1987-01-08 Horst Dipl.-Phys. Dr. 4270 Dorsten Ehrich Verfahren und Vorrichtung zur Materialverdampfung in einem Vakuumbehälter
JP3362479B2 (ja) * 1993-11-05 2003-01-07 株式会社日立製作所 回転電機の回転子
CN105970164B (zh) * 2016-07-18 2018-08-07 大连维钛克科技股份有限公司 一种MCrAlY专用超厚膜电弧靶

Also Published As

Publication number Publication date
JPS5935420A (ja) 1984-02-27

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