JPS5935420A - 半導体薄膜形成方法 - Google Patents

半導体薄膜形成方法

Info

Publication number
JPS5935420A
JPS5935420A JP57146625A JP14662582A JPS5935420A JP S5935420 A JPS5935420 A JP S5935420A JP 57146625 A JP57146625 A JP 57146625A JP 14662582 A JP14662582 A JP 14662582A JP S5935420 A JPS5935420 A JP S5935420A
Authority
JP
Japan
Prior art keywords
semiconductor thin
anode ring
thin film
crucible
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57146625A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357938B2 (OSRAM
Inventor
Tomonobu Hata
畑　朋延
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOUON DENKI KK
Original Assignee
KOUON DENKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOUON DENKI KK filed Critical KOUON DENKI KK
Priority to JP57146625A priority Critical patent/JPS5935420A/ja
Publication of JPS5935420A publication Critical patent/JPS5935420A/ja
Publication of JPS6357938B2 publication Critical patent/JPS6357938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/22—

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57146625A 1982-08-23 1982-08-23 半導体薄膜形成方法 Granted JPS5935420A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57146625A JPS5935420A (ja) 1982-08-23 1982-08-23 半導体薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57146625A JPS5935420A (ja) 1982-08-23 1982-08-23 半導体薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS5935420A true JPS5935420A (ja) 1984-02-27
JPS6357938B2 JPS6357938B2 (OSRAM) 1988-11-14

Family

ID=15411963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57146625A Granted JPS5935420A (ja) 1982-08-23 1982-08-23 半導体薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS5935420A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60255973A (ja) * 1984-04-12 1985-12-17 プラスコ・ドクトル・エーリツヒ・プラズマ―コーテイング・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 真空中で材料を蒸発する方法および装置
US5459363A (en) * 1993-11-05 1995-10-17 Hitachi, Ltd. Rotor for dynamo electric machine
CN105970164A (zh) * 2016-07-18 2016-09-28 大连维钛克科技股份有限公司 一种MCrALY专用超厚膜电弧靶

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60255973A (ja) * 1984-04-12 1985-12-17 プラスコ・ドクトル・エーリツヒ・プラズマ―コーテイング・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング 真空中で材料を蒸発する方法および装置
US5459363A (en) * 1993-11-05 1995-10-17 Hitachi, Ltd. Rotor for dynamo electric machine
CN105970164A (zh) * 2016-07-18 2016-09-28 大连维钛克科技股份有限公司 一种MCrALY专用超厚膜电弧靶

Also Published As

Publication number Publication date
JPS6357938B2 (OSRAM) 1988-11-14

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