JPS6356198B2 - - Google Patents

Info

Publication number
JPS6356198B2
JPS6356198B2 JP58114403A JP11440383A JPS6356198B2 JP S6356198 B2 JPS6356198 B2 JP S6356198B2 JP 58114403 A JP58114403 A JP 58114403A JP 11440383 A JP11440383 A JP 11440383A JP S6356198 B2 JPS6356198 B2 JP S6356198B2
Authority
JP
Japan
Prior art keywords
melt
magnetic field
crystal
diameter
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58114403A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6011297A (ja
Inventor
Jiro Oosaka
Hiroki Koda
Keigo Senkawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11440383A priority Critical patent/JPS6011297A/ja
Publication of JPS6011297A publication Critical patent/JPS6011297A/ja
Publication of JPS6356198B2 publication Critical patent/JPS6356198B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP11440383A 1983-06-27 1983-06-27 結晶育成制御方法及び制御装置 Granted JPS6011297A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11440383A JPS6011297A (ja) 1983-06-27 1983-06-27 結晶育成制御方法及び制御装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11440383A JPS6011297A (ja) 1983-06-27 1983-06-27 結晶育成制御方法及び制御装置

Publications (2)

Publication Number Publication Date
JPS6011297A JPS6011297A (ja) 1985-01-21
JPS6356198B2 true JPS6356198B2 (enrdf_load_html_response) 1988-11-07

Family

ID=14636807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11440383A Granted JPS6011297A (ja) 1983-06-27 1983-06-27 結晶育成制御方法及び制御装置

Country Status (1)

Country Link
JP (1) JPS6011297A (enrdf_load_html_response)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61286296A (ja) * 1985-06-07 1986-12-16 Sumitomo Electric Ind Ltd 半導体単結晶の成長方法および装置
US7291221B2 (en) * 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
US7223304B2 (en) 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5659692A (en) * 1979-10-13 1981-05-23 Toshiba Corp Diameter controlling method for single crystal

Also Published As

Publication number Publication date
JPS6011297A (ja) 1985-01-21

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