JPS6355792B2 - - Google Patents
Info
- Publication number
- JPS6355792B2 JPS6355792B2 JP56170695A JP17069581A JPS6355792B2 JP S6355792 B2 JPS6355792 B2 JP S6355792B2 JP 56170695 A JP56170695 A JP 56170695A JP 17069581 A JP17069581 A JP 17069581A JP S6355792 B2 JPS6355792 B2 JP S6355792B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optical waveguide
- refractive index
- light
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17069581A JPS5873176A (ja) | 1981-10-27 | 1981-10-27 | 半導体レ−ザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17069581A JPS5873176A (ja) | 1981-10-27 | 1981-10-27 | 半導体レ−ザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5873176A JPS5873176A (ja) | 1983-05-02 |
JPS6355792B2 true JPS6355792B2 (zh) | 1988-11-04 |
Family
ID=15909678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17069581A Granted JPS5873176A (ja) | 1981-10-27 | 1981-10-27 | 半導体レ−ザ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5873176A (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0369182A (ja) * | 1989-08-08 | 1991-03-25 | Furukawa Electric Co Ltd:The | 半導体レーザ素子 |
JP6206498B2 (ja) | 2013-08-02 | 2017-10-04 | 富士通株式会社 | 光半導体装置及びその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5618484A (en) * | 1979-07-24 | 1981-02-21 | Nec Corp | Manufacture of semiconductor laser |
JPS5635484A (en) * | 1979-08-29 | 1981-04-08 | Nec Corp | Semiconductor laser |
-
1981
- 1981-10-27 JP JP17069581A patent/JPS5873176A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5618484A (en) * | 1979-07-24 | 1981-02-21 | Nec Corp | Manufacture of semiconductor laser |
JPS5635484A (en) * | 1979-08-29 | 1981-04-08 | Nec Corp | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPS5873176A (ja) | 1983-05-02 |
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