JPS6355218B2 - - Google Patents
Info
- Publication number
- JPS6355218B2 JPS6355218B2 JP54125389A JP12538979A JPS6355218B2 JP S6355218 B2 JPS6355218 B2 JP S6355218B2 JP 54125389 A JP54125389 A JP 54125389A JP 12538979 A JP12538979 A JP 12538979A JP S6355218 B2 JPS6355218 B2 JP S6355218B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- terminal
- region
- switching element
- semiconductor switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12538979A JPS5650555A (en) | 1979-10-01 | 1979-10-01 | Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12538979A JPS5650555A (en) | 1979-10-01 | 1979-10-01 | Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5650555A JPS5650555A (en) | 1981-05-07 |
| JPS6355218B2 true JPS6355218B2 (enrdf_load_stackoverflow) | 1988-11-01 |
Family
ID=14908919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12538979A Granted JPS5650555A (en) | 1979-10-01 | 1979-10-01 | Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5650555A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61283158A (ja) * | 1985-06-10 | 1986-12-13 | Nec Corp | 相補型ｍｏｓトランジスタ回路 |
| JPH01124718U (enrdf_load_stackoverflow) * | 1988-02-18 | 1989-08-24 | ||
| JP2012049946A (ja) * | 2010-08-30 | 2012-03-08 | Toyota Motor Corp | 電圧駆動型素子を駆動する駆動装置 |
-
1979
- 1979-10-01 JP JP12538979A patent/JPS5650555A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5650555A (en) | 1981-05-07 |
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