JPS6354236B2 - - Google Patents

Info

Publication number
JPS6354236B2
JPS6354236B2 JP58085886A JP8588683A JPS6354236B2 JP S6354236 B2 JPS6354236 B2 JP S6354236B2 JP 58085886 A JP58085886 A JP 58085886A JP 8588683 A JP8588683 A JP 8588683A JP S6354236 B2 JPS6354236 B2 JP S6354236B2
Authority
JP
Japan
Prior art keywords
layer
optical waveguide
temperature
diffraction grating
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58085886A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59213190A (ja
Inventor
Juzo Hirayama
Hajime Okuda
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58085886A priority Critical patent/JPS59213190A/ja
Publication of JPS59213190A publication Critical patent/JPS59213190A/ja
Publication of JPS6354236B2 publication Critical patent/JPS6354236B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP58085886A 1983-05-18 1983-05-18 半導体レ−ザの製造方法 Granted JPS59213190A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58085886A JPS59213190A (ja) 1983-05-18 1983-05-18 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58085886A JPS59213190A (ja) 1983-05-18 1983-05-18 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS59213190A JPS59213190A (ja) 1984-12-03
JPS6354236B2 true JPS6354236B2 (enrdf_load_stackoverflow) 1988-10-27

Family

ID=13871387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58085886A Granted JPS59213190A (ja) 1983-05-18 1983-05-18 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS59213190A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206132A (ja) * 1984-03-30 1985-10-17 Nec Corp 結晶成長方法
JPH0567848A (ja) * 1991-09-05 1993-03-19 Fujitsu Ltd 光半導体装置の製造方法

Also Published As

Publication number Publication date
JPS59213190A (ja) 1984-12-03

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