JPS59213190A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS59213190A
JPS59213190A JP58085886A JP8588683A JPS59213190A JP S59213190 A JPS59213190 A JP S59213190A JP 58085886 A JP58085886 A JP 58085886A JP 8588683 A JP8588683 A JP 8588683A JP S59213190 A JPS59213190 A JP S59213190A
Authority
JP
Japan
Prior art keywords
layer
grown
temperature
active layer
optical waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58085886A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6354236B2 (enrdf_load_stackoverflow
Inventor
Yuzo Hirayama
雄三 平山
Hajime Okuda
肇 奥田
Yutaka Uematsu
豊 植松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58085886A priority Critical patent/JPS59213190A/ja
Publication of JPS59213190A publication Critical patent/JPS59213190A/ja
Publication of JPS6354236B2 publication Critical patent/JPS6354236B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP58085886A 1983-05-18 1983-05-18 半導体レ−ザの製造方法 Granted JPS59213190A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58085886A JPS59213190A (ja) 1983-05-18 1983-05-18 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58085886A JPS59213190A (ja) 1983-05-18 1983-05-18 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS59213190A true JPS59213190A (ja) 1984-12-03
JPS6354236B2 JPS6354236B2 (enrdf_load_stackoverflow) 1988-10-27

Family

ID=13871387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58085886A Granted JPS59213190A (ja) 1983-05-18 1983-05-18 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS59213190A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206132A (ja) * 1984-03-30 1985-10-17 Nec Corp 結晶成長方法
US5327450A (en) * 1991-09-05 1994-07-05 Fujitsu Limited Optical semiconductor device and process of prodcuing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206132A (ja) * 1984-03-30 1985-10-17 Nec Corp 結晶成長方法
US5327450A (en) * 1991-09-05 1994-07-05 Fujitsu Limited Optical semiconductor device and process of prodcuing same

Also Published As

Publication number Publication date
JPS6354236B2 (enrdf_load_stackoverflow) 1988-10-27

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