JPS6353958A - Lead frame material - Google Patents
Lead frame materialInfo
- Publication number
- JPS6353958A JPS6353958A JP61197746A JP19774686A JPS6353958A JP S6353958 A JPS6353958 A JP S6353958A JP 61197746 A JP61197746 A JP 61197746A JP 19774686 A JP19774686 A JP 19774686A JP S6353958 A JPS6353958 A JP S6353958A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- copper
- plating
- frame material
- copper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 40
- 239000010949 copper Substances 0.000 claims abstract description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052802 copper Inorganic materials 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000007747 plating Methods 0.000 claims description 29
- 230000003746 surface roughness Effects 0.000 abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010953 base metal Substances 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 10
- 229910000881 Cu alloy Inorganic materials 0.000 description 9
- 229910052718 tin Inorganic materials 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005097 cold rolling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910017824 Cu—Fe—P Inorganic materials 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000005070 ripening Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明はリードフレーム材料に関し、さらに詳しくは、
トランジスターや【Ｃ等の半導体のリードフレーム材料
であり、特に、ボンディングワイヤの八〇８あるいはＣ
ＬＩ線を材料に直接に接合することができる半導体リー
ドフレーム材料に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to lead frame materials, and more particularly,
Lead frame material for semiconductors such as transistors and [C], especially bonding wire 808 or C
The present invention relates to a semiconductor lead frame material that allows LI wires to be directly bonded to the material.
［従来技術］
一般に、半導体のリードフレーム材料には銅合金および
４２アロイか使用されてきているが、最近になって、軽
薄短小化、素子の密度の向上および実装密度の向上の面
から、熱伝導性に潰れている銅合金が多く使用されるよ
うになってきた。[Prior art] Copper alloys and 42 alloys have generally been used as lead frame materials for semiconductors, but recently, thermal Copper alloys that are highly conductive have come into widespread use.
リードフレームはシリコン素子が接合されるグイバット
部あるいはアイランド部、Ａｔ線か接合されて樹脂封じ
されるインナーリート部、さらには、信号を出入するた
めのリード線の役割を果たし、通常は半田めっきされる
いるエクスターナルリード部の三部分から成っている。The lead frame has a lead frame or island part where the silicon element is bonded, an inner lead part where the At wire is bonded and sealed with resin, and a lead wire for inputting and outputting signals, and is usually solder-plated. It consists of three parts: the external lead section.
先ず、グイバット部については、ノリコン素子がＡｕ−
９Ａｕ−９ｉＳＡ等の共晶接合、または、拡散接合、導
電ペースト剤による接合あるいは半田付けで取り付けら
れる。First, regarding the Guibat part, the Noricon element is made of Au-
It can be attached by eutectic bonding such as 9Au-9iSA, diffusion bonding, bonding with a conductive paste, or soldering.
この素子の１題とインナーリード部の先端のフィンガー
アームと称されるところを、Ａａ線あるいはＣｕ線で熱
圧着加熱あるいは超音波併用加熱により接合されるが、
リードフレーム材料は取り扱い上、強度と成形加工性と
うのバランスのとれた特性が必要であり、合金化により
その特性が１ｉｉｉえられているため、種々の含Ｈ元素
が目的に応じて適量含打されている。One part of this element and the so-called finger arm at the tip of the inner lead part are bonded using Aa wire or Cu wire by thermocompression heating or ultrasonic heating.
Lead frame materials need to have a well-balanced property of strength and formability for handling, and since these properties are achieved through alloying, appropriate amounts of various H-containing elements can be impregnated depending on the purpose. has been done.
しかして、純銅のみてあればＡｕ線は安定した接合性を
有するが、強度か不足するため、純銅リードフレームは
採用することができず、また、含（ｆ元素の種類および
その含有量によって特性か変化し易く、従って、信頼性
の高い安定した接合性を得るため、インナーリート部の
フィンガーリートにはＡｇめっきか施されるのが常識で
あった。However, although Au wires have stable bonding properties if they are made of pure copper, pure copper lead frames cannot be used due to their lack of strength. Therefore, in order to obtain highly reliable and stable bonding, it has been common practice to apply Ag plating to the finger rets in the inner ret portion.
ただし、フィンガーリード部のみのＡｇめっきは困難で
あり、通常グイバット部も同時にＡｇめっきがなされる
いる。また、エクスターナルリード部は燐青銅３種等の
Ｐ含有量の高い銅合金を除外すれば錫あるいは半田は剥
離することがなく実用上問題はない。However, it is difficult to plate only the finger leads with Ag, and usually the finger leads are also plated with Ag at the same time. Furthermore, if copper alloys with a high P content such as three types of phosphor bronze are excluded from the external lead portion, tin or solder will not peel off and there will be no practical problem.
一般的に／ｌｃ線は通光雰囲気で純銅とは熱圧接か可能
であることが知るれでおり、Ａｇめっきの変わりにＣＬ
ｌめっきを使用することが考えられる。It is generally known that /LC wire can be heat-press bonded to pure copper in a light-permeable atmosphere, and CL wire can be used instead of Ag plating.
It is conceivable to use l plating.
そして、めっき直後であればＣｕめっきにＡｕ線の熱圧
接は可能であるが、ＣＬＩめっきはポロシティが高く、
表面粗度も ０，８〜１．０μｍと粗べなるため、短時
間で室温で酸化し、また、Ａｕ線との加熱接合中に酸化
し易く、また、母材に強化のために含有させた元素がポ
ロシティが高いため、表面層まで拡散して出てきて、Ｉ
ｃ等の多ビンのリードではピン全敗の接合強度が安定し
なくなるという問題がある。Although thermocompression welding of Au wire to Cu plating is possible immediately after plating, CLI plating has high porosity.
Since the surface roughness is 0.8 to 1.0 μm, it oxidizes at room temperature in a short time, and is easily oxidized during heat bonding with Au wire. Due to the high porosity of the elements, they diffuse to the surface layer and come out.
A problem with multi-bin leads such as c is that the joint strength becomes unstable if the pins are completely destroyed.
上記に説明したように、エクスターナルリード部は特別
の銅合金を除外すれば錫あるいは半田が剥離することな
く使用できるものであるが、銅合金の上に厚さ０．５μ
ｍ以上の銅めっきを行って、その上に錫あるいは半田め
っきを行うと半導体として必須である１５０°Ｃの温度
で１０００時間保持後も錫あるいは半田か剥離すること
なく、密着していることは難しいのである。即ち、銅め
っき層とめっき層との間に表層にη相（ＣｕａＳｎｓ）
、その下にε相（ＣＬＩ３Ｓｎ）が生じ、ε相と銅めっ
き層の界面にボイドが発生し、これらのボイドが連なり
剥離を生じることが判明している。As explained above, the external lead part can be used without the tin or solder peeling off unless a special copper alloy is used.
If copper plating is applied to a thickness of 500 m or more, and then tin or solder is plated on top of it, the tin or solder will remain in close contact without peeling even after being held at a temperature of 150°C for 1,000 hours, which is essential for semiconductors. It's difficult. That is, η phase (CuaSns) is present in the surface layer between the copper plating layer and the plating layer.
It has been found that an ε phase (CLI3Sn) is generated under the ε phase, voids are generated at the interface between the ε phase and the copper plating layer, and these voids are connected to cause peeling.
この剥離を防止するために銅めっき浴に資化銅浴を進定
すると効果はあるが、完全には剥離を防止することはで
きない。In order to prevent this peeling, it is effective to add an assimilated copper bath to the copper plating bath, but it is not possible to completely prevent peeling.
このようなことから、タイバット部およびフィンガーリ
ード部のみ、部分銅めっきを行うことが考えられるが、
表面粗度が０．８〜１．０μｍと組人になり、ポロシテ
ィが高いため（特に多ピンの場合）ワイヤボンディング
中に母材中に含有元素か表面に拡散して出てきて、ホン
ディング性を劣化させるという問題が生じ、結局Ａｇの
局部めっきを行わなければならないことになる。For this reason, it may be possible to perform partial copper plating only on the tie butt part and finger lead part.
When the surface roughness is 0.8 to 1.0 μm, it becomes rough, and the porosity is high (especially in the case of multiple pins). During wire bonding, elements contained in the base material diffuse to the surface and come out, causing bonding. A problem arises in that the properties deteriorate, and eventually local plating with Ag has to be performed.
［発明か解決しようとする間厘点コ
本発明は上記に説明した従来における半導体リードフレ
ーム材料の種々の問題点に鑑み、本発明者が税金研究を
行った結果、半導体リードフレーム材料のグイバット部
およびフィンガーリード部のに銀めっき等を惚ずことな
く、リードフレームに直接に金線を信頼性高く、確実に
接合することができ、また、エクスターナルリード部の
上記の問題を解決することができる半導体リードフレー
ム材料を開発したのである。[Points to be solved by the invention] In view of the various problems of conventional semiconductor lead frame materials explained above, the present inventor has conducted research and has developed a method for solving the problems of semiconductor lead frame materials. It is also possible to reliably and reliably join gold wire directly to the lead frame without damaging the silver plating on the finger lead part, and also solve the above-mentioned problems with the external lead part. They developed a semiconductor lead frame material.
［問題点を解決するための手段］
本発明に係る半導体用のリードフレーム材料は、表面に
厚さ０．５μｍ以上の純度の高い銅層が設けられている
ことを特徴とするものである。[Means for Solving the Problems] The lead frame material for semiconductors according to the present invention is characterized in that a highly pure copper layer with a thickness of 0.5 μm or more is provided on the surface.
また、銅層は銅めっき層を少なくと乙減面率１０％以上
となるように冷間圧延によりスキンパス加工されている
のである。Further, the copper layer is subjected to skin pass processing by cold rolling so that the copper plating layer has an area reduction ratio of at least 10% or more.
本発明に係る半導体用のリードフレーム材料について以
下詳細に説明する。The lead frame material for semiconductors according to the present invention will be described in detail below.
本発明に係る半導体用のリードフレーム材料は、その表
面に０．５μｍ以上の銅層が設けられており、最大表面
粗さが０．４μｍ以下でめっき材の０．８〜１．０μｍ
よりも細か（、めっき材よりも内部のポロシティが小さ
く、軟質の金属銅となっているため、耐酸化性および耐
蝕性も純銅と略同等となっており、その結果、還元性雰
囲気下における金線の加熱圧接によるワイヤボンディン
グ性も安定したものとなる。The semiconductor lead frame material according to the present invention has a copper layer of 0.5 μm or more on its surface, has a maximum surface roughness of 0.4 μm or less, and has a plating thickness of 0.8 to 1.0 μm.
Because the internal porosity is smaller than that of the plating material, making it a soft metallic copper, its oxidation and corrosion resistance is almost the same as that of pure copper. Wire bonding properties due to wire heating and pressure welding also become stable.
さらに、本発明に係るリードフレーム材料は表面の銅層
は銅めっき層を少なくとも１０％以上の減面率て冷間圧
延によりスキンパス圧延を行うことによって、めっき時
に保有していたボイドを変化させると同時に、最大表面
粗さを０．４μｍ以下に調整し、その後、２００〜４０
０℃の温度て少なくとも５秒間の焼鈍を行うことによっ
て、ボイドを減少させると同時にめっき時に含まれたｔ
ｌ ２ガスおよび不純物等を除去放散さけ、表面性状の
安定した半導体用のり−トフレーム材料となる。Furthermore, in the lead frame material according to the present invention, the copper layer on the surface is skin-pass rolled by cold rolling with an area reduction rate of at least 10% to change the voids that were present during plating. At the same time, the maximum surface roughness was adjusted to 0.4 μm or less, and then
By performing annealing at a temperature of 0°C for at least 5 seconds, voids can be reduced and at the same time the t included during plating can be removed.
By removing and dissipating l2 gas and impurities, it becomes a semiconductor glue frame material with stable surface properties.
この本発明に係るリードフレーム材料の母材は、Ｈｖｌ
ＯＯ以上、導電率３０％ＩＡＣＳ以上および軟化温度４
００℃以上の銅合金であり、これはパワートランジスタ
ーとして必要な最低の硬度、ＩＣを設計する上で最小の
導電率、さらには、トランジスターやＩＣの製造工程を
加味した必須の耐熱性を有している乙のである。The base material of the lead frame material according to the present invention is Hvl
OO or higher, electrical conductivity 30% IACS or higher, and softening temperature 4
It is a copper alloy with a temperature of 00°C or higher, and has the minimum hardness required for power transistors, the minimum conductivity for IC design, and the heat resistance required in consideration of the manufacturing process of transistors and ICs. That's what I'm doing.
母材の含有成分および含ａ割合としては、Ｚｎ≦０．５
ｗｔ％、Ｓｎ≦３．ＯｗＬ％を含有腰残部Ｃｕおよび不
可避不純物よりなる銅合金であり、このような銅合金と
することにより、スキンパス加工後２００〜４００℃の
温度で少なくとも５秒間の焼鈍によって、少なくとも減
面率１０％以上の厚さ０．５μｍの銅層を拡散してＺｎ
あるいはＳｎが表面層に現れるのを防止するためある。The components and a content ratio of the base material are Zn≦0.5
wt%, Sn≦3. It is a copper alloy consisting of a residual part of Cu and unavoidable impurities, and by using such a copper alloy, an area reduction of at least 10% can be achieved by annealing at a temperature of 200 to 400°C for at least 5 seconds after skin pass processing. Zn was diffused through the above 0.5 μm thick copper layer.
Alternatively, the purpose is to prevent Sn from appearing on the surface layer.
そして、スキンパス加工時に母（４に乙局部的に応力が
加わるため、表面層のＣｕを軟化さｌ゛ると同時に母材
の残留応力を除去可能な焼鈍条件としては２００〜４０
０℃の温度で少なくとら５秒間とするのがよい。Since stress is applied locally to the base material (4) during skin pass processing, annealing conditions of 200 to 400
Preferably, the time is at least 5 seconds at a temperature of 0°C.
また、エクスターナルリード部のおいてら半田付は後、
１５０℃の温度で１０００時間保持後ら半田は剥離を生
じることは改善され、これは銅層が軟質の金属銅となっ
ており、めっき時のボイドが減少したためと考えられる
。Also, after installing the external lead part, solder it.
After being held at a temperature of 150° C. for 1000 hours, the problem of solder peeling was improved, and this is thought to be because the copper layer was made of soft metallic copper and voids during plating were reduced.
なお、母材としてＺｎ≦０．５ｗｔ％、Ｓｎ≦３．０實
【％を含有する銅合金について説明したが、池の合金と
しては、Ｃｕ−０，１ｗｔ％Ｆｅ−０，０３ｗｔ％Ｐあ
るいはＣｕ−２，３ｗｔ％Ｆｅ−０，０３ｗｔ％Ｐ−０
，１５ｗｔ％Ｚｎを代表とするＣｕ−Ｆｅ−Ｐ系合金、
Ｃａ ３．２ｗｔ％Ｎｉ ０．７ｙｔ％Ｓｊ−ＯＪ
ｗｔ％Ｚｎ、 Ｃｕ−３，２ｗｔ％Ｎｉ−０，７ｗｔ％
５ｉ−１，２５ｗｔ％Ｓｎ−０１ｗｔ％Ｚ１あるいはＣ
ｕ−１，６ｗｔ％Ｎｉ ０．３ｈｔ％５ｉ−０，３ｗ
ｔ％Ｚｒを代表とするＣｕ−Ｎ１ｔＳｉ系合金、Ｃｕ−
１ｖｔ％５ｎ−０．Ｉｗｔ％Ｆｅ−０．０３ｗｔ％ＰＳ
Ｃｕ−２ｗｔ％Ｓｎ−Ｏ，ｌｉｔ％Ｆｅ−０，０３ｗｔ
％ＰおよびＣｕ−２ｔｔ％５ｎ−０．２ｗｔ％Ｎｉ−０
．０５ｗｔ％Ｐを代表するＣｕ−５ｎ−Ｐ系合金を挙げ
ることができる。In addition, although the copper alloy containing Zn≦0.5wt% and Sn≦3.0% as the base material has been described, the copper alloy containing Cu-0.1wt%Fe-0.03wt%P or Cu-2,3wt%Fe-0,03wt%P-0
, Cu-Fe-P alloy represented by 15 wt% Zn,
Ca 3.2wt%Ni 0.7yt%Sj-OJ
wt%Zn, Cu-3,2wt%Ni-0,7wt%
5i-1, 25wt%Sn-01wt%Z1 or C
u-1,6wt%Ni 0.3ht%5i-0,3w
Cu-N1tSi alloy, represented by t%Zr, Cu-
1vt%5n-0. Iwt%Fe-0.03wt%PS
Cu-2wt%Sn-O, lit%Fe-0,03wt
%P and Cu-2tt%5n-0.2wt%Ni-0
．． A Cu-5n-P alloy representing 0.05wt%P can be mentioned.
１実 施 例］
本発明に係るリードフレーム材料について実施例を説明
する。1 Example] Examples of the lead frame material according to the present invention will be described.
実施例
Ｎｏ、１．Ｃｕ−２ｗｔ％５ｎ−０，１ｗｔ％Ｆｅ−０
，０３ｗｔ％ＰのＴＩ／２４．ｔ、板厚０．ｌ５ｍｍと
Ｎｏ、Ｉｌ、Ｃｕ−３，２ｗｔ％Ｎｉ−０，７ｗｔ％５
ｉ−１，３５ｗ１％５ｎ−０，３ｗｔ％Ｚ、ｎのＨ材、
板厚０．１５ｍｍとの材料を硫酸銅浴でめっきを行い、
銅めっき厚さ、スキンパス圧延後の減面率、焼鈍条件を
第１表に示す。Example No. 1. Cu-2wt%5n-0, 1wt%Fe-0
,03wt%P TI/24. t, plate thickness 0. 15mm and No, Il, Cu-3,2wt%Ni-0,7wt%5
i-1,35w1%5n-0,3wt%Z, H material of n,
Plating the material with a plate thickness of 0.15 mm in a copper sulfate bath,
Table 1 shows the copper plating thickness, area reduction after skin pass rolling, and annealing conditions.
これらの材料を１０ｗｔ％硫酸水溶液で酸洗し、水で／
ｊ：午後乾燥し、Ａｕ線によるワイヤホンディング性、
湿潤試験（温度４０°Ｃｓ Ｉ’；Ｎ３．度９５％以上
、時間・１時間）による耐蝕性、さらに、半田付け（Ｐ
ｂ−９ｎ共品半田、フラツクスはアルファ１００、温度
２３５°Ｃ１浸漬時間５秒間）後に１５０℃の温度で１
０００時間の恒温保持試験を行い、半田の密着性を調べ
た。また、いずれの材料を予めエスカにより表面分析を
行っ１こ。結果を第１表に示す。These materials were pickled with a 10 wt% sulfuric acid aqueous solution, and then washed with water.
j: Dry in the afternoon, wire bonding property with Au wire,
Corrosion resistance by humidity test (temperature 40°Cs I'; N3.degrees 95% or more, time: 1 hour), and soldering (P
b-9n solder, flux is Alpha 100, temperature 235°C 1 immersion time 5 seconds), then 150°C temperature 1
A constant temperature holding test for 1,000 hours was conducted to examine the solder adhesion. In addition, the surface of each material was analyzed using ESCA in advance. The results are shown in Table 1.
・硫酸銅めっき条件
硫酸銅（５ＨｚＯ） ２００ｇ／ ＬＣＩ−’ ４００
＋’）ｐｍ。・Copper sulfate plating conditions Copper sulfate (5HzO) 200g/LCI-' 400
+')pm.
硫酸（比重１．８４） ５０ｇ／ｌ、浴温度
２５℃
陽極 電解銅
電流密度 ５Ａ／ｄｍ２
・ワイヤボンディング試験
熱圧着式ワイヤボンダーのホルダーにリードフレーム材
料を装着し、１００ ｐｐｍのＮ２を含むＮ。Sulfuric acid (specific gravity 1.84) 50g/l, bath temperature
25°C Anode Electrolytic copper current density 5A/dm2 Wire bonding test Lead frame material was attached to the holder of a thermocompression wire bonder, and N containing 100 ppm N2 was applied.
ガスでシールドし、ホルダーのスナーノの温度を２５０
℃、接圧荷重３０ｇの条件下で直径３０μｍのＡｕワイ
ヤで接合間距離を１ｍｍとしてウニソノ型の接合を行う
。その後、プルテスターて破％ｔ’５および破断荷重を
測定した。Shield with gas and set the temperature of the holder to 250
℃ and a contact pressure load of 30 g, a sea urchin type bonding is performed using an Au wire with a diameter of 30 μm with a distance between the bonding points of 1 mm. Thereafter, the breaking % t'5 and breaking load were measured using a pull tester.
第１表において、Ｎｏ、ｌ〜Ｎｏ、６は本発明に係るリ
ードフレーム材料であり、銅めっき後の表面１且さか０
．８〜１．０７１ｍ、めっき層厚さＩ。０〜５１μｍて
、スキンパス加工で厚さ０．５５〜４．３μｍに表面加
工を行うことによって、表面粗さ０．３−０．４μｍと
なり、さらに、２００〜４００°Ｃの温度で５秒間以上
熟処理することによって耐蝕性と半田の１５０°Ｃの温
度で１０００時間における密着性か向」ニすることを示
している。In Table 1, No. 1 to No. 6 are lead frame materials according to the present invention, and the surface after copper plating is 1 and 0.
．． 8 to 1.071 m, plating layer thickness I. The surface roughness is 0.3 to 0.4 μm by skin pass processing to a thickness of 0 to 51 μm, and the surface roughness is 0.3 to 0.4 μm. It has been shown that the corrosion resistance and adhesion of solder at a temperature of 150°C for 1000 hours are improved by ripening.
ボンディング強さは、めっき材のままでもその後引き続
いて行なわれる圧延＋焼鈍材でも１０ｇ以上の値を示し
、合格ラインにある。しかし、耐蝕性を考慮すると銅め
っきままでは表面が活性化されたままで非常に変色し易
いため、比較材料のＮｏ、７〜ＮＯ，９に示すように表
面特性ろく不安定であり、ホンディング性の経時的な劣
化が回避できないことを示している。The bonding strength shows a value of 10 g or more both in the plated material and in the subsequently rolled and annealed material, which is on the acceptable line. However, considering corrosion resistance, if the copper plating is left as it is, the surface remains activated and discolors very easily.As shown in comparative materials No. 7 to No. 9, the surface properties are unstable and the hondability is low. This indicates that deterioration over time cannot be avoided.
［発明の効果］
以上説明したように、本発明に係るリードフレーム材料
は上記の構成を有しているものであるから、ビッカース
硬変か１００以上で、導電率が３０％ｌ Ａ ＣＳ以上
、さらには、軟化温度、４００°Ｃ以上を有する母材の
表面に、銅めっきを泡し、最終の表面の下延加工後に銅
層の厚さか０．５μｍ以上であり、さらに、２００〜４
００°Ｃの温度で５秒間以上の熱処理を行うことによっ
て、銅層中のボイドの減少、Ｈ、ガスの除去および母材
のスキンバス時に生じた局部応力を除去することがてき
、従って、銅めっき材の状態よりも最大表面祖度乙０．
８〜１．０μｍから０．４μｍと細かくてき、そのため
、金線のワイヤボンディング時の接合性が安定し、さら
に、外部リード部においてら半田の剥離のないリードフ
レーム材料であり、特に、銀等に比へ、圧延と焼鈍によ
ってボロンティが減少することができ、銅層の厚さを減
少てき、めっき時間の短縮による生産性の向上と品質の
向上を同時に可能とてき、半導体産業への貢献度は多大
であるという効果を草するものである。[Effects of the Invention] As explained above, since the lead frame material according to the present invention has the above structure, it has a Vickers hardness of 100 or more, an electrical conductivity of 30% l A CS or more, Furthermore, copper plating is bubbled on the surface of the base material having a softening temperature of 400°C or more, and after the final surface rolling process, the thickness of the copper layer is 0.5 μm or more, and furthermore, the thickness of the copper layer is 0.5 μm or more.
By performing heat treatment at a temperature of 00°C for 5 seconds or more, it is possible to reduce voids in the copper layer, remove H and gas, and remove local stress generated during the skin bath of the base material. The maximum surface density is 0.
The fineness of the wire is from 8 to 1.0 μm to 0.4 μm, and therefore, the bonding property during wire bonding of gold wire is stable, and furthermore, it is a lead frame material that does not peel off the solder from the external lead part. In contrast, rolling and annealing can reduce volonty, reduce the thickness of the copper layer, and improve productivity and quality by shortening plating time, contributing to the semiconductor industry. This suggests that the effect is enormous.
Claims (2)
けられていることを特徴とする半導体リードフレーム材
料。(1) A semiconductor lead frame material characterized in that a highly pure copper layer with a thickness of 0.5 μm or more is provided on the surface.
となるように加工されていることを特徴とする特許請求
の範囲第１項記載の半導体リードフレーム材料。(2) The semiconductor lead frame material according to claim 1, wherein the copper layer is processed so that the copper plating layer has an area reduction rate of at least 10% or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61197746A JPS6353958A (en) | 1986-08-23 | 1986-08-23 | Lead frame material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61197746A JPS6353958A (en) | 1986-08-23 | 1986-08-23 | Lead frame material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6353958A true JPS6353958A (en) | 1988-03-08 |
Family
ID=16379653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61197746A Pending JPS6353958A (en) | 1986-08-23 | 1986-08-23 | Lead frame material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6353958A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02145755A (en) * | 1988-11-28 | 1990-06-05 | Kobe Steel Ltd | Manufacture of lead frame material having superior property of joining with resin |
-
1986
- 1986-08-23 JP JP61197746A patent/JPS6353958A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02145755A (en) * | 1988-11-28 | 1990-06-05 | Kobe Steel Ltd | Manufacture of lead frame material having superior property of joining with resin |
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