JPS6353689B2 - - Google Patents
Info
- Publication number
- JPS6353689B2 JPS6353689B2 JP58180686A JP18068683A JPS6353689B2 JP S6353689 B2 JPS6353689 B2 JP S6353689B2 JP 58180686 A JP58180686 A JP 58180686A JP 18068683 A JP18068683 A JP 18068683A JP S6353689 B2 JPS6353689 B2 JP S6353689B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- wafer
- chuck
- alignment
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 2
- 230000007246 mechanism Effects 0.000 description 13
- 238000001514 detection method Methods 0.000 description 6
- 230000032258 transport Effects 0.000 description 4
- 238000001015 X-ray lithography Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58180686A JPS6074527A (ja) | 1983-09-30 | 1983-09-30 | マスク装着方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58180686A JPS6074527A (ja) | 1983-09-30 | 1983-09-30 | マスク装着方法及び装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6074527A JPS6074527A (ja) | 1985-04-26 |
| JPS6353689B2 true JPS6353689B2 (enrdf_load_stackoverflow) | 1988-10-25 |
Family
ID=16087530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58180686A Granted JPS6074527A (ja) | 1983-09-30 | 1983-09-30 | マスク装着方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074527A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62237727A (ja) * | 1986-04-09 | 1987-10-17 | Hitachi Ltd | Ｘ線露光装置およびその方法 |
| JP2770960B2 (ja) * | 1988-10-06 | 1998-07-02 | キヤノン株式会社 | Ｓｏｒ−ｘ線露光装置 |
| JP4942401B2 (ja) * | 2006-04-24 | 2012-05-30 | Ｎｓｋテクノロジー株式会社 | 露光装置及び露光方法 |
| JP5089255B2 (ja) * | 2007-06-11 | 2012-12-05 | Ｎｓｋテクノロジー株式会社 | 露光装置 |
-
1983
- 1983-09-30 JP JP58180686A patent/JPS6074527A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6074527A (ja) | 1985-04-26 |
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