JPS6350877B2 - - Google Patents
Info
- Publication number
- JPS6350877B2 JPS6350877B2 JP16007283A JP16007283A JPS6350877B2 JP S6350877 B2 JPS6350877 B2 JP S6350877B2 JP 16007283 A JP16007283 A JP 16007283A JP 16007283 A JP16007283 A JP 16007283A JP S6350877 B2 JPS6350877 B2 JP S6350877B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cladding layer
- stripe pattern
- light emitting
- referred
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005253 cladding Methods 0.000 claims description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Weting (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16007283A JPS6050982A (ja) | 1983-08-30 | 1983-08-30 | 半導体レ−ザおよびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16007283A JPS6050982A (ja) | 1983-08-30 | 1983-08-30 | 半導体レ−ザおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6050982A JPS6050982A (ja) | 1985-03-22 |
JPS6350877B2 true JPS6350877B2 (enrdf_load_stackoverflow) | 1988-10-12 |
Family
ID=15707275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16007283A Granted JPS6050982A (ja) | 1983-08-30 | 1983-08-30 | 半導体レ−ザおよびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6050982A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63262472A (ja) * | 1987-04-20 | 1988-10-28 | Sanyo Electric Co Ltd | 膜形成方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108512034B (zh) * | 2017-02-28 | 2020-04-03 | 山东华光光电子股份有限公司 | 一种横向非对称光波导半导体激光器芯片及其制备方法 |
-
1983
- 1983-08-30 JP JP16007283A patent/JPS6050982A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63262472A (ja) * | 1987-04-20 | 1988-10-28 | Sanyo Electric Co Ltd | 膜形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6050982A (ja) | 1985-03-22 |
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