JPS6350800B2 - - Google Patents

Info

Publication number
JPS6350800B2
JPS6350800B2 JP58030289A JP3028983A JPS6350800B2 JP S6350800 B2 JPS6350800 B2 JP S6350800B2 JP 58030289 A JP58030289 A JP 58030289A JP 3028983 A JP3028983 A JP 3028983A JP S6350800 B2 JPS6350800 B2 JP S6350800B2
Authority
JP
Japan
Prior art keywords
mosfet
memory device
redundant
redundant bit
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58030289A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59157899A (ja
Inventor
Taiichi Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58030289A priority Critical patent/JPS59157899A/ja
Publication of JPS59157899A publication Critical patent/JPS59157899A/ja
Publication of JPS6350800B2 publication Critical patent/JPS6350800B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/006—Identification

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP58030289A 1983-02-25 1983-02-25 冗長ビツトの検出手段を有するメモリ−装置 Granted JPS59157899A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58030289A JPS59157899A (ja) 1983-02-25 1983-02-25 冗長ビツトの検出手段を有するメモリ−装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030289A JPS59157899A (ja) 1983-02-25 1983-02-25 冗長ビツトの検出手段を有するメモリ−装置

Publications (2)

Publication Number Publication Date
JPS59157899A JPS59157899A (ja) 1984-09-07
JPS6350800B2 true JPS6350800B2 (enrdf_load_stackoverflow) 1988-10-11

Family

ID=12299559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58030289A Granted JPS59157899A (ja) 1983-02-25 1983-02-25 冗長ビツトの検出手段を有するメモリ−装置

Country Status (1)

Country Link
JP (1) JPS59157899A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6398297U (enrdf_load_stackoverflow) * 1986-12-17 1988-06-25

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105157B2 (ja) * 1987-09-10 1995-11-13 日本電気株式会社 冗長メモリセル使用判定回路
JP2507486B2 (ja) * 1987-10-14 1996-06-12 日本電気株式会社 半導体記憶装置
KR100370234B1 (ko) * 1999-09-14 2003-01-29 삼성전자 주식회사 반도체 메모리 장치에서 결함 셀 검출 회로 및 그 방법
KR100837803B1 (ko) 2006-11-13 2008-06-13 주식회사 하이닉스반도체 전압 검출 장치 및 이를 포함하는 내부 전압 발생 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6398297U (enrdf_load_stackoverflow) * 1986-12-17 1988-06-25

Also Published As

Publication number Publication date
JPS59157899A (ja) 1984-09-07

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