JPS6349233U - - Google Patents

Info

Publication number

JPS6349233U

JPS6349233U JP7517987U JP7517987U JPS6349233U JP S6349233 U JPS6349233 U JP S6349233U JP 7517987 U JP7517987 U JP 7517987U JP 7517987 U JP7517987 U JP 7517987U JP S6349233 U JPS6349233 U JP S6349233U

Authority

JP

Japan

Prior art keywords

drawer

opening end

wafer

semiconductor manufacturing

manufacturing process

Prior art date

1987-05-21

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• 239000010453 quartz Substances 0.000 claims description 6
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
• 238000004519 manufacturing process Methods 0.000 claims description 5
• 239000004065 semiconductor Substances 0.000 claims description 5
• 238000010791 quenching Methods 0.000 claims description 4
• 230000000171 quenching effect Effects 0.000 claims description 4
• 238000009792 diffusion process Methods 0.000 claims description 3
• 235000012431 wafers Nutrition 0.000 claims 6
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
• PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 3
• 239000010931 gold Substances 0.000 claims 3
• 229910052737 gold Inorganic materials 0.000 claims 3
• 229910052710 silicon Inorganic materials 0.000 claims 3
• 239000010703 silicon Substances 0.000 claims 3
• 239000007789 gas Substances 0.000 description 2
• IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 229910001873 dinitrogen Inorganic materials 0.000 description 1