JPS6348840B2 - - Google Patents

Info

Publication number
JPS6348840B2
JPS6348840B2 JP58016257A JP1625783A JPS6348840B2 JP S6348840 B2 JPS6348840 B2 JP S6348840B2 JP 58016257 A JP58016257 A JP 58016257A JP 1625783 A JP1625783 A JP 1625783A JP S6348840 B2 JPS6348840 B2 JP S6348840B2
Authority
JP
Japan
Prior art keywords
whiskers
type
gas
silicon nitride
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58016257A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59147000A (ja
Inventor
Hajime Saito
Tetsuro Urakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP58016257A priority Critical patent/JPS59147000A/ja
Publication of JPS59147000A publication Critical patent/JPS59147000A/ja
Publication of JPS6348840B2 publication Critical patent/JPS6348840B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58016257A 1983-02-04 1983-02-04 β型窒化けい素ウイスカ−の製造方法 Granted JPS59147000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58016257A JPS59147000A (ja) 1983-02-04 1983-02-04 β型窒化けい素ウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58016257A JPS59147000A (ja) 1983-02-04 1983-02-04 β型窒化けい素ウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS59147000A JPS59147000A (ja) 1984-08-23
JPS6348840B2 true JPS6348840B2 (OSRAM) 1988-09-30

Family

ID=11911505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58016257A Granted JPS59147000A (ja) 1983-02-04 1983-02-04 β型窒化けい素ウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS59147000A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256798A (ja) * 1986-04-30 1987-11-09 Toshiba Ceramics Co Ltd 繊維状窒化珪素の製造方法
JPS63130734A (ja) * 1986-11-19 1988-06-02 Ube Ind Ltd β型窒化珪素ウイスカ−強化金属複合材料
JPS63222099A (ja) * 1987-03-10 1988-09-14 Ube Ind Ltd β型窒化珪素ウイスカ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4927755A (OSRAM) * 1972-07-10 1974-03-12
JPS5234715B2 (OSRAM) * 1973-05-17 1977-09-05

Also Published As

Publication number Publication date
JPS59147000A (ja) 1984-08-23

Similar Documents

Publication Publication Date Title
US4428916A (en) Method of making α-silicon nitride powder
JPS5891005A (ja) 窒化ケイ素粉末の製造方法
US4387079A (en) Method of manufacturing high-purity silicon nitride powder
US4619905A (en) Process for the synthesis of silicon nitride
US4521393A (en) Method of manufacturing β type silicon nitride whiskers
US4716028A (en) Process for preparation of high-type silicon nitride powder
JPS5913442B2 (ja) 高純度の型窒化珪素の製造法
JPS6111886B2 (OSRAM)
JPS6348840B2 (OSRAM)
US5258170A (en) Process for producing silicon carbide platelets
JPS5930645B2 (ja) 高純度α型窒化珪素の製造法
JPS6111885B2 (OSRAM)
JPH0481521B2 (OSRAM)
JPH0151443B2 (OSRAM)
JPS60122706A (ja) 窒化ケイ素粉末の製造方法
JPS61201608A (ja) 高純度窒化アルミニウム粉末の製造方法
JP4025810B2 (ja) 窒化ケイ素粒子の製造方法
JPS606884B2 (ja) α型窒化けい素粉末の製造方法
JPH0313166B2 (OSRAM)
JPS6259049B2 (OSRAM)
JPS60235707A (ja) 複合微粉末の製造方法
JPH11268999A (ja) 炭化珪素ウイスカー及び窒化珪素ウイスカーの製造方法
JPH0310567B2 (OSRAM)
JPH03353B2 (OSRAM)
JPH0240606B2 (OSRAM)