JPS6348134Y2 - - Google Patents

Info

Publication number
JPS6348134Y2
JPS6348134Y2 JP1984198672U JP19867284U JPS6348134Y2 JP S6348134 Y2 JPS6348134 Y2 JP S6348134Y2 JP 1984198672 U JP1984198672 U JP 1984198672U JP 19867284 U JP19867284 U JP 19867284U JP S6348134 Y2 JPS6348134 Y2 JP S6348134Y2
Authority
JP
Japan
Prior art keywords
layer
turn
thyristor
gate
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984198672U
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136159U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19867284U priority Critical patent/JPS60136159U/ja
Publication of JPS60136159U publication Critical patent/JPS60136159U/ja
Application granted granted Critical
Publication of JPS6348134Y2 publication Critical patent/JPS6348134Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
JP19867284U 1984-12-26 1984-12-26 タ−ンオフサイリスタ Granted JPS60136159U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19867284U JPS60136159U (ja) 1984-12-26 1984-12-26 タ−ンオフサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19867284U JPS60136159U (ja) 1984-12-26 1984-12-26 タ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS60136159U JPS60136159U (ja) 1985-09-10
JPS6348134Y2 true JPS6348134Y2 (enExample) 1988-12-12

Family

ID=30757879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19867284U Granted JPS60136159U (ja) 1984-12-26 1984-12-26 タ−ンオフサイリスタ

Country Status (1)

Country Link
JP (1) JPS60136159U (enExample)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5111578A (ja) * 1974-07-19 1976-01-29 Meidensha Electric Mfg Co Ltd Handotaisochi

Also Published As

Publication number Publication date
JPS60136159U (ja) 1985-09-10

Similar Documents

Publication Publication Date Title
EP0009367B1 (en) Gate turn-off thyristor
EP0014098A2 (en) Gate turn-off thyristor
JPH0467343B2 (enExample)
US6177713B1 (en) Free wheel diode for preventing destruction of a field limiting innermost circumferential layer
US5155561A (en) Permeable base transistor having an electrode configuration for heat dissipation
EP0022355B1 (en) Gate turn-off thyristor
JPS6182477A (ja) 導電変調型ｍｏｓｆｅｔ
JP2950025B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JPS6348134Y2 (enExample)
JPH0620141B2 (ja) 導電変調型ｍｏｓｆｅｔ
JP4626893B2 (ja) ＳｉＣから構成された半導体層を有するバイポーラ半導体デバイスおよびＳｉＣから構成された半導体デバイスを製造する方法
JP2513640B2 (ja) 導電変調型ｍｏｓｆｅｔ
JPS59158561A (ja) アバランシエにより過電圧から自己保護するサイリスタおよびその製造方法
JPS6364060B2 (enExample)
JPS62283669A (ja) 導電変調型ｍｏｓｆｅｔ
JPS6257250A (ja) 半導体装置
JPS59163865A (ja) ゲ−トタ−ンオフサイリスタ
JPH0610700Y2 (ja) ショットキバリアダイオード
JPS5934147Y2 (ja) ゲ−トタ−ンオフサイリスタ
JPH08288300A (ja) ヘテロ接合バイポーラトランジスタ
JPS6120783Y2 (enExample)
JP3168530B2 (ja) 波型バッファ構造を有する半導体装置
JP3284019B2 (ja) 電力用半導体装置
JP2718911B2 (ja) 導電変調型ｍｏｓｆｅｔ
JPS60177677A (ja) 半導体装置