JPS6347974A - ヘテロ接合バイポ−ラトランジスタ - Google Patents
ヘテロ接合バイポ−ラトランジスタInfo
- Publication number
- JPS6347974A JPS6347974A JP61192485A JP19248586A JPS6347974A JP S6347974 A JPS6347974 A JP S6347974A JP 61192485 A JP61192485 A JP 61192485A JP 19248586 A JP19248586 A JP 19248586A JP S6347974 A JPS6347974 A JP S6347974A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- emitter
- base
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 230000007423 decrease Effects 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 27
- 239000000758 substrate Substances 0.000 abstract description 6
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000003503 early effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61192485A JPS6347974A (ja) | 1986-08-18 | 1986-08-18 | ヘテロ接合バイポ−ラトランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61192485A JPS6347974A (ja) | 1986-08-18 | 1986-08-18 | ヘテロ接合バイポ−ラトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6347974A true JPS6347974A (ja) | 1988-02-29 |
| JPH0571172B2 JPH0571172B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=16292080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61192485A Granted JPS6347974A (ja) | 1986-08-18 | 1986-08-18 | ヘテロ接合バイポ−ラトランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6347974A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021841A (en) * | 1988-10-14 | 1991-06-04 | University Of Illinois | Semiconductor device with controlled negative differential resistance characteristic |
| US6037616A (en) * | 1996-12-12 | 2000-03-14 | Nec Corporation | Bipolar transistor having base contact layer in contact with lower surface of base layer |
-
1986
- 1986-08-18 JP JP61192485A patent/JPS6347974A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021841A (en) * | 1988-10-14 | 1991-06-04 | University Of Illinois | Semiconductor device with controlled negative differential resistance characteristic |
| US6037616A (en) * | 1996-12-12 | 2000-03-14 | Nec Corporation | Bipolar transistor having base contact layer in contact with lower surface of base layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0571172B2 (enrdf_load_stackoverflow) | 1993-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |