JPS6347974A - ヘテロ接合バイポ−ラトランジスタ - Google Patents

ヘテロ接合バイポ−ラトランジスタ

Info

Publication number
JPS6347974A
JPS6347974A JP61192485A JP19248586A JPS6347974A JP S6347974 A JPS6347974 A JP S6347974A JP 61192485 A JP61192485 A JP 61192485A JP 19248586 A JP19248586 A JP 19248586A JP S6347974 A JPS6347974 A JP S6347974A
Authority
JP
Japan
Prior art keywords
region
layer
emitter
base
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61192485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571172B2 (cs
Inventor
Riichi Kato
加藤　理一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61192485A priority Critical patent/JPS6347974A/ja
Publication of JPS6347974A publication Critical patent/JPS6347974A/ja
Publication of JPH0571172B2 publication Critical patent/JPH0571172B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP61192485A 1986-08-18 1986-08-18 ヘテロ接合バイポ−ラトランジスタ Granted JPS6347974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61192485A JPS6347974A (ja) 1986-08-18 1986-08-18 ヘテロ接合バイポ−ラトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61192485A JPS6347974A (ja) 1986-08-18 1986-08-18 ヘテロ接合バイポ−ラトランジスタ

Publications (2)

Publication Number Publication Date
JPS6347974A true JPS6347974A (ja) 1988-02-29
JPH0571172B2 JPH0571172B2 (cs) 1993-10-06

Family

ID=16292080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61192485A Granted JPS6347974A (ja) 1986-08-18 1986-08-18 ヘテロ接合バイポ−ラトランジスタ

Country Status (1)

Country Link
JP (1) JPS6347974A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
US6037616A (en) * 1996-12-12 2000-03-14 Nec Corporation Bipolar transistor having base contact layer in contact with lower surface of base layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
US6037616A (en) * 1996-12-12 2000-03-14 Nec Corporation Bipolar transistor having base contact layer in contact with lower surface of base layer

Also Published As

Publication number Publication date
JPH0571172B2 (cs) 1993-10-06

Similar Documents

Publication Publication Date Title
US4119994A (en) Heterojunction and process for fabricating same
US5006912A (en) Heterojunction bipolar transistor with SiGe
US7135721B2 (en) Heterojunction bipolar transistor having reduced driving voltage requirements
US4794440A (en) Heterojunction bipolar transistor
KR100289473B1 (ko) 다층 베이스 헤테로접합 장치 및 그 제조방법
JP2804095B2 (ja) ヘテロ接合バイボーラトランジスタ
US6423990B1 (en) Vertical heterojunction bipolar transistor
CN110581167B (zh) 一种台面型AlGaN/GaN异质结双极晶体管器件及其制备方法
US5571732A (en) Method for fabricating a bipolar transistor
US5648666A (en) Double-epitaxy heterojunction bipolar transistors for high speed performance
US5814843A (en) Heterojunction bipolar transistor having a graded-composition base region
US5912481A (en) Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US3500141A (en) Transistor structure
JPS6347974A (ja) ヘテロ接合バイポ−ラトランジスタ
CN209804658U (zh) 一种台面型AlGaN/GaN异质结双极晶体管器件
CN210110780U (zh) PNP型肖特基集电区AlGaN/GaN HBT器件
JP4158683B2 (ja) ヘテロ接合バイポーラトランジスタ用エピタキシャルウェハ
Kimura et al. Improvement of the electrical properties of MBE grown Ge layers and its application to collector-top n-GaAs/p-Ge/n-Ge HBTs
US7923752B2 (en) Thin-film crystal wafer having pn junction and method for fabricating the wafer
JP3183882B2 (ja) ヘテロ接合バイポーラトランジスタ
JPH11121461A (ja) ヘテロ接合バイポーラトランジスタ
JPH05175225A (ja) ヘテロ接合バイポーラトランジスタの製造方法
JP3228431B2 (ja) コレクタアップ構造ヘテロ接合バイポーラトランジスタの製造方法
Shigematsu et al. ALE/MOCVD grown InP/InGaAs HBTs with a highly-Be-doped base layer and suppressed diffusion
JPH10308401A (ja) ヘテロ接合バイポーラトランジスタ

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees