JPS6347364A - 化学的気相成長法およびその装置 - Google Patents

化学的気相成長法およびその装置

Info

Publication number
JPS6347364A
JPS6347364A JP61190494A JP19049486A JPS6347364A JP S6347364 A JPS6347364 A JP S6347364A JP 61190494 A JP61190494 A JP 61190494A JP 19049486 A JP19049486 A JP 19049486A JP S6347364 A JPS6347364 A JP S6347364A
Authority
JP
Japan
Prior art keywords
substrate
aluminum
deposition
gas
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61190494A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0414188B2 (cg-RX-API-DMAC7.html
Inventor
Takao Amasawa
天沢　敬生
Hiroaki Nakamura
宏昭 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP61190494A priority Critical patent/JPS6347364A/ja
Priority to GB8719166A priority patent/GB2195663B/en
Priority to KR1019870008955A priority patent/KR910001190B1/ko
Priority to DE19873727264 priority patent/DE3727264A1/de
Publication of JPS6347364A publication Critical patent/JPS6347364A/ja
Priority to US07/324,983 priority patent/US4956204A/en
Publication of JPH0414188B2 publication Critical patent/JPH0414188B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP61190494A 1986-08-15 1986-08-15 化学的気相成長法およびその装置 Granted JPS6347364A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61190494A JPS6347364A (ja) 1986-08-15 1986-08-15 化学的気相成長法およびその装置
GB8719166A GB2195663B (en) 1986-08-15 1987-08-13 Chemical vapour deposition method and apparatus therefor
KR1019870008955A KR910001190B1 (ko) 1986-08-15 1987-08-14 화학적 기상성장법과 그 장치
DE19873727264 DE3727264A1 (de) 1986-08-15 1987-08-15 Chemisches dampf-ablagerungsverfahren und vorrichtung zur durchfuehrung derselben
US07/324,983 US4956204A (en) 1986-08-15 1989-03-15 Process of forming a film by low pressure chemical vapor deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61190494A JPS6347364A (ja) 1986-08-15 1986-08-15 化学的気相成長法およびその装置

Publications (2)

Publication Number Publication Date
JPS6347364A true JPS6347364A (ja) 1988-02-29
JPH0414188B2 JPH0414188B2 (cg-RX-API-DMAC7.html) 1992-03-12

Family

ID=16259027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61190494A Granted JPS6347364A (ja) 1986-08-15 1986-08-15 化学的気相成長法およびその装置

Country Status (1)

Country Link
JP (1) JPS6347364A (cg-RX-API-DMAC7.html)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01252776A (ja) * 1988-03-31 1989-10-09 Sony Corp 気相成長アルミニウム膜形成方法
US5091210A (en) * 1989-09-26 1992-02-25 Canon Kabushiki Kaisha Plasma CVD of aluminum films
JP2022540789A (ja) * 2019-06-28 2022-09-20 ラム リサーチ コーポレーション 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト
US12105422B2 (en) 2019-06-26 2024-10-01 Lam Research Corporation Photoresist development with halide chemistries
US12183604B2 (en) 2020-07-07 2024-12-31 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
US12346035B2 (en) 2020-11-13 2025-07-01 Lam Research Corporation Process tool for dry removal of photoresist
US12474638B2 (en) 2020-01-15 2025-11-18 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814945A (ja) * 1981-07-22 1983-01-28 Shimada Phys & Chem Ind Co Ltd 気相成長装置
JPS6057925A (ja) * 1983-09-09 1985-04-03 Matsushita Electronics Corp シリコン上へのタングステン膜の形成方法
JPS61113769A (ja) * 1984-11-05 1986-05-31 ゼネラル・エレクトリツク・カンパニイ 導体および半導体表面上へのタングステン蒸着の選択性を向上させる方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814945A (ja) * 1981-07-22 1983-01-28 Shimada Phys & Chem Ind Co Ltd 気相成長装置
JPS6057925A (ja) * 1983-09-09 1985-04-03 Matsushita Electronics Corp シリコン上へのタングステン膜の形成方法
JPS61113769A (ja) * 1984-11-05 1986-05-31 ゼネラル・エレクトリツク・カンパニイ 導体および半導体表面上へのタングステン蒸着の選択性を向上させる方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01252776A (ja) * 1988-03-31 1989-10-09 Sony Corp 気相成長アルミニウム膜形成方法
US5091210A (en) * 1989-09-26 1992-02-25 Canon Kabushiki Kaisha Plasma CVD of aluminum films
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
US12105422B2 (en) 2019-06-26 2024-10-01 Lam Research Corporation Photoresist development with halide chemistries
JP2022540789A (ja) * 2019-06-28 2022-09-20 ラム リサーチ コーポレーション 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト
US12474638B2 (en) 2020-01-15 2025-11-18 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12183604B2 (en) 2020-07-07 2024-12-31 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US12278125B2 (en) 2020-07-07 2025-04-15 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US12346035B2 (en) 2020-11-13 2025-07-01 Lam Research Corporation Process tool for dry removal of photoresist

Also Published As

Publication number Publication date
JPH0414188B2 (cg-RX-API-DMAC7.html) 1992-03-12

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Legal Events

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