JPS634715B2 - - Google Patents
Info
- Publication number
- JPS634715B2 JPS634715B2 JP8523481A JP8523481A JPS634715B2 JP S634715 B2 JPS634715 B2 JP S634715B2 JP 8523481 A JP8523481 A JP 8523481A JP 8523481 A JP8523481 A JP 8523481A JP S634715 B2 JPS634715 B2 JP S634715B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- npn transistor
- semiconductor substrate
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8523481A JPS57199251A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8523481A JPS57199251A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57199251A JPS57199251A (en) | 1982-12-07 |
| JPS634715B2 true JPS634715B2 (US07413550-20080819-C00001.png) | 1988-01-30 |
Family
ID=13852866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8523481A Granted JPS57199251A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57199251A (US07413550-20080819-C00001.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
| US5032529A (en) * | 1988-08-24 | 1991-07-16 | Harris Corporation | Trench gate VCMOS method of manufacture |
-
1981
- 1981-06-01 JP JP8523481A patent/JPS57199251A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57199251A (en) | 1982-12-07 |
