JPS6344991Y2 - - Google Patents
Info
- Publication number
- JPS6344991Y2 JPS6344991Y2 JP3659582U JP3659582U JPS6344991Y2 JP S6344991 Y2 JPS6344991 Y2 JP S6344991Y2 JP 3659582 U JP3659582 U JP 3659582U JP 3659582 U JP3659582 U JP 3659582U JP S6344991 Y2 JPS6344991 Y2 JP S6344991Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- solder member
- thin metal
- lead
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910000679 solder Inorganic materials 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Wire Bonding (AREA)
Description
【考案の詳細な説明】 本案は半導体装置の改良に関するものである。[Detailed explanation of the idea] This proposal relates to improvement of semiconductor devices.
一般にこの種半導体装置は例えば第１図に示す
ように、放熱板Ａに半導体素子Ｂを半田部材を用
いて固定すると共に、半導体素子Ｂの電極とリー
ドＣとを金属細線Ｄにて接続し、かつ半導体素子
Ｂを含む主要部分を樹脂材Ｅにてモールド被覆し
て構成されている。 In general, this type of semiconductor device, for example, as shown in FIG. 1, a semiconductor element B is fixed to a heat sink A using a solder member, and an electrode of the semiconductor element B and a lead C are connected with a thin metal wire D. The main portion including the semiconductor element B is molded and covered with a resin material E.
ところで、放熱板Ａ、リードＣには銅，鉄−ニ
ツケルなどの金属部材が用いられており、その表
面には酸化層の生成による金属細線Ｄの接続性の
低下を防止する目的で銀などがメツキされてい
る。そして、このような構成によつて、金属細線
ＤのリードＣへの接続を確実に行うことができる
上、長期間に亘つて安定した接続状態を保つこと
ができるものである。 By the way, metal members such as copper and iron-nickel are used for the heat dissipation plate A and the leads C, and silver or the like is coated on the surface of the metal members in order to prevent the connectivity of the fine metal wires D from decreasing due to the formation of an oxide layer. It has been marked. With such a configuration, the thin metal wire D can be reliably connected to the lead C, and a stable connection state can be maintained for a long period of time.
しかし乍ら、リードＣの樹脂材Ｅより露呈する
部分にはプリント板などへの実装を容易化するた
めに、半田部材が浸漬法などによつて被着されて
いるのであるが、同じリードＣに対し銀メツキ，
半田部材の被着処理が施される関係で製造工程が
煩雑化する上、近時の銀を含む貴金属の高謄と相
俟つて半導体装置のコストが高くなるという問題
がある。 However, in order to facilitate mounting on a printed circuit board, etc., a solder material is applied to the part of the lead C exposed from the resin material E by a dipping method. Against silver plating,
There is a problem in that the manufacturing process becomes complicated due to the process of adhering the solder member, and the cost of the semiconductor device increases due to the recent high prices of precious metals including silver.
本案はこのような点に鑑み、簡単な構成によつ
て製造工程を簡略化できる上、コストをも低減で
きる半導体装置を提供するもので、以下実施例に
ついて説明する。 In view of these points, the present invention provides a semiconductor device that can simplify the manufacturing process and reduce costs due to its simple configuration.Examples will be described below.
第２図において、１は放熱板であつて、それの
上面には半導体素子２が第１の半田部材３を用い
て固定されている。この第１の半田部材３として
は例えば融点がほぼ290℃の銀−錫−鉛半田が好
適する。そして、半導体素子２の電極は一端が半
導体素子２の近傍に位置するように配設されたリ
ード４に金属細線５によつて電気的に接続されて
いる。尚、リード４には予め第１の半田部材３よ
り融点の低い第２の半田部材６がメツキ，浸漬な
どによつて被着されている。この第２の半田部材
６としては例えば融点が230〜240℃の銀−錫半田
が好適する。そして、半導体素子２を含む主要部
分は樹脂材７にてモールド被覆されている。 In FIG. 2, reference numeral 1 denotes a heat sink, on the top surface of which a semiconductor element 2 is fixed using a first solder member 3. In FIG. As the first solder member 3, for example, silver-tin-lead solder having a melting point of approximately 290°C is suitable. The electrode of the semiconductor element 2 is electrically connected to a lead 4 disposed such that one end thereof is located near the semiconductor element 2 by a thin metal wire 5. Incidentally, a second solder member 6 having a lower melting point than the first solder member 3 is previously attached to the lead 4 by plating, dipping, or the like. As this second solder member 6, for example, silver-tin solder having a melting point of 230 to 240°C is suitable. The main portion including the semiconductor element 2 is molded and covered with a resin material 7.
このようにリード４には銀メツキに代え、第２
の半田部材６が被着されているので、従来と同様
にリード４の表面酸化を防止することができ、金
属細線５の接続性を良好に保つことができる。 In this way, instead of silver plating for lead 4,
Since the solder member 6 is applied, surface oxidation of the leads 4 can be prevented as in the conventional case, and good connectivity of the thin metal wires 5 can be maintained.
しかも、この第２の半田部材６は第１の半田部
材３より融点が低く設定されているので、金属細
線５の接続する際に250℃程度に加熱しても、半
導体素子２を放熱板１に固定している第１の半田
部材３は全く溶融しない。このために、金属細線
５の接続作業を円滑に遂行することができる。 Furthermore, since the second solder member 6 is set to have a lower melting point than the first solder member 3, even if the semiconductor element 2 is heated to about 250°C when connecting the thin metal wire 5, the semiconductor element 2 is The first solder member 3 that is fixed to is not melted at all. For this reason, the work of connecting the thin metal wires 5 can be carried out smoothly.
特に金属細線５を熱圧着法によつてリード４に
接続する場合には第２の半田部材６が溶融状態と
なつているために、熱圧着に加えて半田付けされ
る関係で、接続状態を一層強固かつ安定にでき
る。 In particular, when the thin metal wire 5 is connected to the lead 4 by thermocompression bonding, the second solder member 6 is in a molten state. It can be made even stronger and more stable.
又、リード４には予め第２の半田部材６が被着
されているので、半導体素子２を含む主要部分の
樹脂モールド後に、プリント板などへの実装性を
高めるための半田部材の被着作業を改めて行う必
要が全くない。従つて、製造工程を簡略化でき、
銀メツキの省略と相俟つて半導体装置のコストを
効果的に低減できる。 Further, since the second solder member 6 is applied to the leads 4 in advance, after the main part including the semiconductor element 2 is resin-molded, the work of applying the solder member to improve the mountability on a printed board etc. is performed. There is no need to do it again. Therefore, the manufacturing process can be simplified,
Combined with the omission of silver plating, the cost of semiconductor devices can be effectively reduced.
第３図は本案の他の実施例を示すものであつ
て、リード４の半導体素子２に隣接する部分には
第１の半田部材３より融点の低い第２の半田部材
６1が部分的に被着されている。そして、この部
分６1には半導体素子２の電極より延びる金属細
線５が接続されている。 FIG. 3 shows another embodiment of the present invention, in which a second solder member 6 1 having a lower melting point than the first solder member 3 is partially attached to a portion of the lead 4 adjacent to the semiconductor element 2. It is covered. A thin metal wire 5 extending from the electrode of the semiconductor element 2 is connected to this portion 6 1 .
この実施例によれば、第２の半田部材６のリー
ド４への被着部分が限定されているために、コス
トをさらに低減できる。 According to this embodiment, since the portion of the second solder member 6 that is attached to the lead 4 is limited, costs can be further reduced.
尚、本案において、第１，第２の半田部材は上
記実施例以外のものを使用することもできるし、
又、放熱板，リードの形状及び本数は適宜に変更
できる。 In addition, in the present invention, the first and second solder members may be made of materials other than the above-mentioned embodiments.
Further, the shape and number of the heat sink and the leads can be changed as appropriate.
以上のように本案によれば、簡単な構成によつ
て製造工程を簡略化できる上、コストをも有効に
低減できる。 As described above, according to the present invention, the manufacturing process can be simplified due to the simple configuration, and costs can also be effectively reduced.
第１図は従来例の横断面図、第２図〜第３図は
本案のそれぞれ異つた実施例を示す横断面図であ
る。
図中、１は放熱板、２は半導体素子、３，６，
６1は半田部材、４はリード、５は金属細線、７
は樹脂材である。
FIG. 1 is a cross-sectional view of a conventional example, and FIGS. 2 and 3 are cross-sectional views showing different embodiments of the present invention. In the figure, 1 is a heat sink, 2 is a semiconductor element, 3, 6,
6 1 is a solder member, 4 is a lead, 5 is a thin metal wire, 7
is a resin material.
Claims (1)
ると共に、半導体素子の電極とリードとを金属細
線にて接続し、かつ半導体素子を含む主要部分を
樹脂材にて被覆したものにおいて、上記リードに
おける金属細線の接続部分に、半導体素子の放熱
板への固定用の半田部材より融点の低い半田部材
を被着したことを特徴とする半導体装置。 A semiconductor element is fixed to a heat sink using a solder member, electrodes of the semiconductor element and leads are connected with thin metal wires, and the main part including the semiconductor element is covered with a resin material. A semiconductor device characterized in that a solder member having a lower melting point than a solder member for fixing a semiconductor element to a heat sink is attached to a connecting portion of the thin metal wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3659582U JPS58140636U (en) | 1982-03-16 | 1982-03-16 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3659582U JPS58140636U (en) | 1982-03-16 | 1982-03-16 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58140636U JPS58140636U (en) | 1983-09-21 |
| JPS6344991Y2 true JPS6344991Y2 (en) | 1988-11-22 |
Family
ID=30048019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3659582U Granted JPS58140636U (en) | 1982-03-16 | 1982-03-16 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58140636U (en) |
-
1982
- 1982-03-16 JP JP3659582U patent/JPS58140636U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58140636U (en) | 1983-09-21 |
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