JPS6343888B2 - - Google Patents
Info
- Publication number
- JPS6343888B2 JPS6343888B2 JP24003983A JP24003983A JPS6343888B2 JP S6343888 B2 JPS6343888 B2 JP S6343888B2 JP 24003983 A JP24003983 A JP 24003983A JP 24003983 A JP24003983 A JP 24003983A JP S6343888 B2 JPS6343888 B2 JP S6343888B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- single crystal
- porous
- region
- crystal silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 23
- 229910021426 porous silicon Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000002048 anodisation reaction Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24003983A JPS60130842A (ja) | 1983-12-20 | 1983-12-20 | 誘電体分離基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24003983A JPS60130842A (ja) | 1983-12-20 | 1983-12-20 | 誘電体分離基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60130842A JPS60130842A (ja) | 1985-07-12 |
| JPS6343888B2 true JPS6343888B2 (enrdf_load_stackoverflow) | 1988-09-01 |
Family
ID=17053558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24003983A Granted JPS60130842A (ja) | 1983-12-20 | 1983-12-20 | 誘電体分離基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60130842A (enrdf_load_stackoverflow) |
-
1983
- 1983-12-20 JP JP24003983A patent/JPS60130842A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60130842A (ja) | 1985-07-12 |
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