JPS6342849B2 - - Google Patents
Info
- Publication number
- JPS6342849B2 JPS6342849B2 JP56053654A JP5365481A JPS6342849B2 JP S6342849 B2 JPS6342849 B2 JP S6342849B2 JP 56053654 A JP56053654 A JP 56053654A JP 5365481 A JP5365481 A JP 5365481A JP S6342849 B2 JPS6342849 B2 JP S6342849B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- capacitance
- mol
- porcelain
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 229910052573 porcelain Inorganic materials 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000003985 ceramic capacitor Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229940071182 stannate Drugs 0.000 description 3
- 125000005402 stannate group Chemical group 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910021523 barium zirconate Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- -1 oxides Chemical class 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000013022 formulation composition Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5365481A JPS57167617A (en) | 1981-04-08 | 1981-04-08 | Grain boundary insulating type semiconductor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5365481A JPS57167617A (en) | 1981-04-08 | 1981-04-08 | Grain boundary insulating type semiconductor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57167617A JPS57167617A (en) | 1982-10-15 |
| JPS6342849B2 true JPS6342849B2 (US06826419-20041130-M00005.png) | 1988-08-25 |
Family
ID=12948852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5365481A Granted JPS57167617A (en) | 1981-04-08 | 1981-04-08 | Grain boundary insulating type semiconductor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57167617A (US06826419-20041130-M00005.png) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0687365B2 (ja) * | 1986-05-09 | 1994-11-02 | 宇部興産株式会社 | 高誘電率磁器組成物 |
| JPH0687364B2 (ja) * | 1986-05-09 | 1994-11-02 | 宇部興産株式会社 | 高誘電率磁器組成物 |
| KR100997379B1 (ko) * | 2008-08-08 | 2010-11-30 | 한국과학기술연구원 | 선형적 유전특성을 나타내는 유전체 박막 조성물 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317961A (en) * | 1976-08-03 | 1978-02-18 | Siemens Ag | Capacitor dielectric having internal bloking layer and method of manufacturing said derivative |
| JPS5384200A (en) * | 1976-12-30 | 1978-07-25 | Siemens Ag | Condenser dielectrics having internal barrier and method of manufacturing same |
-
1981
- 1981-04-08 JP JP5365481A patent/JPS57167617A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5317961A (en) * | 1976-08-03 | 1978-02-18 | Siemens Ag | Capacitor dielectric having internal bloking layer and method of manufacturing said derivative |
| JPS5384200A (en) * | 1976-12-30 | 1978-07-25 | Siemens Ag | Condenser dielectrics having internal barrier and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57167617A (en) | 1982-10-15 |
