JPS6338859B2 - - Google Patents

Info

Publication number
JPS6338859B2
JPS6338859B2 JP56112408A JP11240881A JPS6338859B2 JP S6338859 B2 JPS6338859 B2 JP S6338859B2 JP 56112408 A JP56112408 A JP 56112408A JP 11240881 A JP11240881 A JP 11240881A JP S6338859 B2 JPS6338859 B2 JP S6338859B2
Authority
JP
Japan
Prior art keywords
implantation
silicon
ions
silicon dioxide
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56112408A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5759323A (en
Inventor
Hinkeru Horugeru
Kemupu Yurugen
Kurausu Jeorugu
Ei Shumitsuto Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5759323A publication Critical patent/JPS5759323A/ja
Publication of JPS6338859B2 publication Critical patent/JPS6338859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6309—
    • H10P14/6322—
    • H10P30/204—
    • H10P30/21—
    • H10P30/212—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Formation Of Insulating Films (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP56112408A 1980-09-19 1981-07-20 Method of producing semiconductor device Granted JPS5759323A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP80105614A EP0048288B1 (de) 1980-09-19 1980-09-19 Verfahren zur Dotierung von Halbleiterbauelementen mittels Ionenimplantation

Publications (2)

Publication Number Publication Date
JPS5759323A JPS5759323A (en) 1982-04-09
JPS6338859B2 true JPS6338859B2 (enExample) 1988-08-02

Family

ID=8186799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56112408A Granted JPS5759323A (en) 1980-09-19 1981-07-20 Method of producing semiconductor device

Country Status (4)

Country Link
US (1) US4386968A (enExample)
EP (1) EP0048288B1 (enExample)
JP (1) JPS5759323A (enExample)
DE (1) DE3071288D1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567645A (en) * 1983-09-16 1986-02-04 International Business Machines Corporation Method for forming a buried subcollector in a semiconductor substrate by ion implantation
US4635345A (en) * 1985-03-14 1987-01-13 Harris Corporation Method of making an intergrated vertical NPN and vertical oxide fuse programmable memory cell
US4701780A (en) * 1985-03-14 1987-10-20 Harris Corporation Integrated verticle NPN and vertical oxide fuse programmable memory cell
US4824698A (en) * 1987-12-23 1989-04-25 General Electric Company High temperature annealing to improve SIMOX characteristics
US5043292A (en) * 1990-05-31 1991-08-27 National Semiconductor Corporation Self-aligned masking for ultra-high energy implants with application to localized buried implants and insolation structures
US5648282A (en) * 1992-06-26 1997-07-15 Matsushita Electronics Corporation Autodoping prevention and oxide layer formation apparatus
US6191052B1 (en) 1999-01-25 2001-02-20 Taiwan Semiconductor Manufacturing Company Method for fabricating an ultra-shallow junction with low resistance using a screen oxide formed by poly re-oxidation in a nitrogen containing atmosphere
US7105997B1 (en) * 1999-08-31 2006-09-12 Micron Technology, Inc. Field emitter devices with emitters having implanted layer
WO2003001583A2 (en) * 2001-06-22 2003-01-03 Memc Electronic Materials, Inc. Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
FR2866470B1 (fr) * 2004-02-18 2006-07-21 Atmel Nantes Sa Procede pour la fabrication de circuits integres et dispositif correspondant.
US20090186237A1 (en) 2008-01-18 2009-07-23 Rolls-Royce Corp. CMAS-Resistant Thermal Barrier Coatings
US10717678B2 (en) * 2008-09-30 2020-07-21 Rolls-Royce Corporation Coating including a rare earth silicate-based layer including a second phase
US8470460B2 (en) * 2008-11-25 2013-06-25 Rolls-Royce Corporation Multilayer thermal barrier coatings
US20110033630A1 (en) * 2009-08-05 2011-02-10 Rolls-Royce Corporation Techniques for depositing coating on ceramic substrate
CA2806172C (en) 2010-07-23 2015-04-28 Rolls-Royce Corporation Thermal barrier coatings including cmas-resistant thermal barrier coating layers
WO2012027442A1 (en) 2010-08-27 2012-03-01 Rolls-Royce Corporation Rare earth silicate environmental barrier coatings
US10329205B2 (en) 2014-11-24 2019-06-25 Rolls-Royce Corporation Bond layer for silicon-containing substrates
CN115332356A (zh) * 2016-04-13 2022-11-11 株式会社半导体能源研究所 半导体装置及包括该半导体装置的显示装置
US20190017177A1 (en) 2017-07-17 2019-01-17 Rolls-Royce Corporation Thermal barrier coatings for components in high-temperature mechanical systems
US11655543B2 (en) 2017-08-08 2023-05-23 Rolls-Royce Corporation CMAS-resistant barrier coatings
US10851656B2 (en) 2017-09-27 2020-12-01 Rolls-Royce Corporation Multilayer environmental barrier coating

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
US4018627A (en) * 1975-09-22 1977-04-19 Signetics Corporation Method for fabricating semiconductor devices utilizing oxide protective layer
DE2546662A1 (de) * 1975-10-17 1977-04-21 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung
US4144100A (en) * 1977-12-02 1979-03-13 General Motors Corporation Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon
US4179792A (en) * 1978-04-10 1979-12-25 The United States Of America As Represented By The Secretary Of The Army Low temperature CMOS/SOS process using dry pressure oxidation
US4170492A (en) * 1978-04-18 1979-10-09 Texas Instruments Incorporated Method of selective oxidation in manufacture of semiconductor devices

Also Published As

Publication number Publication date
EP0048288A1 (de) 1982-03-31
EP0048288B1 (de) 1985-12-11
US4386968A (en) 1983-06-07
DE3071288D1 (en) 1986-01-23
JPS5759323A (en) 1982-04-09

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