JPS6338272A - Photosemiconductor device - Google Patents
Photosemiconductor deviceInfo
- Publication number
- JPS6338272A JPS6338272A JP61181886A JP18188686A JPS6338272A JP S6338272 A JPS6338272 A JP S6338272A JP 61181886 A JP61181886 A JP 61181886A JP 18188686 A JP18188686 A JP 18188686A JP S6338272 A JPS6338272 A JP S6338272A
- Authority
- JP
- Japan
- Prior art keywords
- light
- chip
- optical semiconductor
- fresnel lens
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
発明の背景
この発明は光半導体装置に関する。光半導体装置とは1
発光もしくは受光の単機能、または発光および受光の両
機能をもつ半導体装置を意味し。DETAILED DESCRIPTION OF THE INVENTION BACKGROUND OF THE INVENTION This invention relates to optical semiconductor devices. What is an optical semiconductor device?1
Refers to a semiconductor device that has a single function of emitting or receiving light, or a semiconductor device that has both functions of emitting and receiving light.
発光装置、受光装置1発光受光装置等を含む概念である
。This concept includes a light emitting device, a light receiving device, a light emitting device, and the like.
レーザ・ダイオード(LD)、発光ダイオード(LED
)などの発光素子から出射される光は広がりをもつ発散
光であるために、この光を利用するためには、一般にこ
の発光素子の前面に別途にコリメート・レンズを設けて
平行光に変換することが多い。しかしながら、コリメー
ト量レンズを設けるとこの発光素子を利用した装置が大
型化することは避けられず、光軸調整や焦点距離調整な
どが必要となる。また、LDの出射光はその広がり角が
異方性をもつので楕円錐状に発散する。したがって1通
常の1枚のレンズではこれを完全にコリメートすること
はできず、充分にコリメートされた光を得るためには組
レンズや非球面レンズを使用しなければならないので高
価となる。Laser diode (LD), light emitting diode (LED)
) Light emitted from a light-emitting element such as a light-emitting element is a wide, diverging light, so in order to utilize this light, a separate collimating lens is generally provided in front of the light-emitting element to convert it into parallel light. There are many things. However, if a collimating lens is provided, a device using this light emitting element will inevitably become larger, and optical axis adjustment, focal length adjustment, etc. will be required. Furthermore, the light emitted from the LD has anisotropic spread angle, so it diverges into an elliptical cone shape. Therefore, it is not possible to completely collimate the light with a single ordinary lens, and in order to obtain sufficiently collimated light, a set of lenses or an aspherical lens must be used, which is expensive.
他方、フォトダイオード(PD)、アバランシェ・フォ
トダイオード(APD)などの受光素子において、入射
光を効率よくその受光面上に集光さぜるためにも、従来
は外部にレンズを設ける必要があった。On the other hand, in light-receiving elements such as photodiodes (PDs) and avalanche photodiodes (APDs), it has conventionally been necessary to provide an external lens in order to efficiently focus incident light onto the light-receiving surface. Ta.
発明の概要
この発明は、新しいタイプの小形の光学系を光半導体素
子チップ近傍に設けることによって上記の問題点を解決
することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems by providing a new type of compact optical system near an optical semiconductor element chip.
この発明は、光半導体チップを窓付きキャップによって
実装するタイプの光半導体装置において、光通過位置に
あけられた上記の窓にマイクロ・フレネル・レンズを設
けたことを特徴とする。The present invention is an optical semiconductor device of a type in which an optical semiconductor chip is mounted by a cap with a window, and is characterized in that a micro Fresnel lens is provided in the window formed at a light passage position.
光゛ト導体チップが発光素子チップの場合には。When the optical conductor chip is a light emitting element chip.
発光素子からの出射光が上記マイクロ・フレネル・レン
ズによってほぼ平行化されるようにすることが好ましく
、また光半導体チップが受光素子チップの場合には、上
記マイクロ・フレネル・レンズの焦点を受光素子の受光
面」二にほぼ位置させることが好ましい。It is preferable that the light emitted from the light emitting element be substantially collimated by the micro Fresnel lens, and when the optical semiconductor chip is a light receiving element chip, the focus of the micro Fresnel lens is set to be parallel to the light receiving element. It is preferable that the light-receiving surface be located approximately at the second light-receiving surface.
光半導体チップが7発光と受光の両機能をもつ発光受光
素子チップの場合には1−記マイクロ・フレネル・レン
ズをこれに適した位置、形状とする。たとえば、中央部
が発光部で周囲に受光部があるような素子においては、
中央部からの出射光が平行光となって外部に出力され、
外部からの入射光の多くが周囲の受光部に集まるような
2つの焦点をもつフレネル・レンズを作製するとよい。In the case where the optical semiconductor chip is a light emitting/receiving element chip having both light emitting and light receiving functions, the micro Fresnel lens (1) is placed in a position and shape suitable for this purpose. For example, in a device that has a light emitting part in the center and a light receiving part around it,
The light emitted from the center becomes parallel light and is output to the outside.
It is preferable to fabricate a Fresnel lens with two focal points so that most of the incident light from the outside is focused on the surrounding light-receiving areas.
さらに光半導体チップがLDであり、その出射光の発散
角が方向によって異なる場合には、フレネル・レンズの
パターンを方向に応じて焦点距離が異なるような形状と
することによって、はぼ完全なコリメート光を得るよう
にすることもできる。Furthermore, if the optical semiconductor chip is an LD and the divergence angle of the emitted light differs depending on the direction, almost perfect collimation can be achieved by making the pattern of the Fresnel lens such that the focal length differs depending on the direction. It can also be made to receive light.
この発明によると7発光素rチップに対してはその出射
光がほぼ平行化されるので、比較的高強度(高輝度)で
指向性がよくなり、受光素子チップに対しては入射光が
受光面上に集光されるので集光効率がよく高感度となる
。According to this invention, the emitted light from the 7 light-emitting element chip is almost parallelized, resulting in relatively high intensity (high brightness) and good directivity, and the incident light is received by the light-receiving element chip. Since the light is focused on the surface, the light collection efficiency is good and the sensitivity is high.
また1発光、受光素子チップを問わず、マイクロ・フレ
ネル・レンズはプラスチック成形することが可能である
から生産性がよく安価に提供できるとともに、マイクロ
・フレネル・レンズが素子チップのキャップに固定され
ているから光軸のずれ等が生じることがなく耐環境性に
すぐれたものとなり、さらに小型、軽量化が期待できる
。In addition, regardless of whether it is a single light-emitting or light-receiving element chip, the micro Fresnel lens can be molded in plastic, so it is highly productive and can be provided at low cost. Because of this, the optical axis does not shift, resulting in excellent environmental resistance, and further downsizing and weight reduction can be expected.
実施例の説明
第1図および第2図を参照して、いくつかの端子2を有
するステムないしはマウント1上にサブマウントないし
はヒート・シンク3が設けられ。DESCRIPTION OF THE EMBODIMENTS Referring to FIGS. 1 and 2, a submount or heat sink 3 is provided on a stem or mount 1 having several terminals 2. In FIG.
このヒート・シンク3に素子チップ4が取付けられてい
る。素子チップ4は、上述したようにLD、LED、P
D、APD等のチップである。An element chip 4 is attached to this heat sink 3. As mentioned above, the element chip 4 includes LD, LED, P
D, APD, etc. chips.
素子チップ4にはキャップ5が被せられている。The element chip 4 is covered with a cap 5.
キャップ5は、キャンシール、接若、溶着その他の通常
のやり方でマウント1に固定される。The cap 5 is fixed to the mount 1 by can sealing, welding, welding, or other conventional methods.
キャップ5の頂部(」二面)すなわち素子チップ4の出
射光のまたは素子チップ4へ入射光の通過位置には窓5
aがあけられており、ここに透明樹脂製のマイクロやフ
レネル・レンズ6が取付けられている。このフレネル・
レンズ6はその周縁において窓5aの内周面に接着によ
って固定される。好ましくは、第2図に示されているよ
うにフレネル・レンズ6の凹凸が形成された微細加工面
がキャップ5の内側を向くように配置される。このこと
によって、この微細加工面の外力からの保護とレンズ特
性の劣化の防止とが図られる。キャップ5の窓5aの外
側に保護ガラスを設けると一層よい。There is a window 5 at the top (two sides) of the cap 5, that is, at the position where the light emitted from the element chip 4 or the light incident on the element chip 4 passes.
A is opened, and a transparent resin micro or Fresnel lens 6 is attached thereto. This Fresnel
The lens 6 is fixed at its peripheral edge to the inner peripheral surface of the window 5a by adhesive. Preferably, as shown in FIG. 2, the Fresnel lens 6 is arranged so that the micro-machined surface on which the concavo-convex portion is formed faces the inside of the cap 5. This protects the microfabricated surface from external forces and prevents deterioration of lens characteristics. It is even better to provide a protective glass outside the window 5a of the cap 5.
素子チップ4が発光素子(LD、LEDなど)の場合に
は、素子4からの出射光がマイクロ・フレネル・レンズ
6によってほぼ平行化されるように、このレンズ6の位
置および焦点が定められる。また素子チップ4が受光素
子(PD、APDなど)の場合には、入射光がこの素子
4の受光面上にほぼ集光されるようにマイクロ・フレネ
ル・レンズ6の位置、焦点等が決定される。When the element chip 4 is a light emitting element (LD, LED, etc.), the position and focus of the micro Fresnel lens 6 are determined so that the light emitted from the element 4 is substantially collimated by the micro Fresnel lens 6. Further, when the element chip 4 is a light receiving element (PD, APD, etc.), the position, focus, etc. of the micro Fresnel lens 6 are determined so that the incident light is almost focused on the light receiving surface of the element 4. Ru.
とくに素子チップ4がLDの場合には、その出射光の広
がり角は異方性を示し、第3図に示すようにX方向とY
方向とでは発散角が異なる。このため、出射光の横断面
は楕円形となる。このような出射光をほぼ完全にコリメ
ートさせるためには、第4図に示すような楕円形パター
ンをもっフレネル・レンズを用いるとよい。In particular, when the element chip 4 is an LD, the spread angle of the emitted light exhibits anisotropy, and as shown in FIG.
The divergence angle differs depending on the direction. Therefore, the cross section of the emitted light is elliptical. In order to almost completely collimate such emitted light, it is preferable to use a Fresnel lens having an elliptical pattern as shown in FIG.
第1図において、素子チップ4の電極は対応する端子2
にワイヤ・ボンディングされているのはいうまでもない
。In FIG. 1, the electrodes of the element chip 4 are connected to the corresponding terminals 2.
Needless to say, it is wire bonded to the
このようなマイクロ・フレネル。レンズ6は射出成形そ
の他のやり方によって透明樹脂で一体成形することがで
きる。Micro Fresnel like this. The lens 6 can be integrally molded from transparent resin by injection molding or other methods.
この樹脂成形のためのマイクロ・フレネル・レンズの雌
型は種々のやり方でこれをつくることができるが、たと
えば次のようにして作製すればよい。The female mold of the micro Fresnel lens for resin molding can be made in various ways, for example, as follows.
所定の基板上に電子線レジストを塗布し、電子線描画法
によりレジスト」二にマイクロ・フレネル・レンズ・パ
ターンを描画し、その後、このレジストを現像する。そ
して、基板上の残膜レジスト・パターンをドライ・エツ
チングによって基板に転写する。この基板が雌型となる
(特願昭61−3419参照)。An electron beam resist is applied onto a predetermined substrate, a micro Fresnel lens pattern is drawn on the resist by electron beam lithography, and then this resist is developed. Then, the remaining resist pattern on the substrate is transferred to the substrate by dry etching. This substrate becomes a female mold (see Japanese Patent Application No. 61-3419).
または、上記の残膜レジスト・パターンを雄型として電
鋳法によって雌型を形成する。すなわち、残膜レジスト
・パターンに金属をめっきし。Alternatively, a female mold is formed by electroforming using the above residual film resist pattern as a male mold. That is, the remaining resist pattern is plated with metal.
その後、残膜パターンおよび基板を有機溶剤等で溶解す
ることにより、金属めっき部分のみを残す(特願昭61
−3420参照)。After that, by dissolving the remaining film pattern and the substrate with an organic solvent, only the metal plating part is left (patent application No. 61
-3420).
第1図はこの発明の実施例を示すもので一部を破断した
斜視図、第2図は第1図のキャップおよびマイクロ・フ
レネル・レンズの断面図、第3図は半導体レーザから出
射する光の発散の様子を示す図、第4図はこのような発
散角をもつ光をコリメートするために好適なマイクロ・
フレネル・レンズ・パターンを示すものである。
4・・・発光または受光素子チップ。
5・・・キャップ。
5a・・・窓。
6・・・マイクロ・フレネル拳レンズ。
以 上Figure 1 is a partially cutaway perspective view showing an embodiment of the present invention, Figure 2 is a sectional view of the cap and micro Fresnel lens in Figure 1, and Figure 3 is light emitted from a semiconductor laser. Figure 4 is a diagram showing the state of divergence of light, and Figure 4 shows a micro-meter suitable for collimating light with such a divergence angle.
It shows a Fresnel lens pattern. 4... Light emitting or light receiving element chip. 5... Cap. 5a...window. 6...Micro Fresnel fist lens. that's all
Claims (5)
タイプのものにおいて、光通過位置にあけられた上記の
窓にマイクロ・フレネル・レンズを設けたことを特徴と
する光半導体装置。(1) An optical semiconductor device of the type in which an optical semiconductor chip is mounted using a cap with a window, characterized in that a micro Fresnel lens is provided in the window opened at a light passage position.
子からの発光が上記マイクロ・フレネル・レンズによっ
てほぼ平行化される、特許請求の範囲第(1)項に記載
の光半導体装置。(2) The optical semiconductor device according to claim (1), wherein the optical semiconductor chip is a light emitting element chip, and the light emitted from the light emitting element is substantially collimated by the micro Fresnel lens.
イクロ・フレネル・レンズの焦点が受光素子の受光面上
にほぼ位置している、特許請求の範囲第(1)項に記載
の光半導体装置。(3) The optical semiconductor device according to claim (1), wherein the optical semiconductor chip is a light receiving element chip, and the focal point of the micro Fresnel lens is located substantially on the light receiving surface of the light receiving element. .
の範囲第(1)項に記載の光半導体装置。(4) The optical semiconductor device according to claim (1), wherein the optical semiconductor chip is a light emitting light receiving element.
上記マイクロ・フレネル・レンズが半導体レーザ・チッ
プから出射し異方的に拡散する光を平行光に変換するも
のである、特許請求の範囲第(1)項に記載の光半導体
装置。(5) the optical semiconductor chip is a semiconductor laser chip,
The optical semiconductor device according to claim 1, wherein the micro Fresnel lens converts light emitted from a semiconductor laser chip and anisotropically diffused into parallel light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61181886A JPS6338272A (en) | 1986-08-04 | 1986-08-04 | Photosemiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61181886A JPS6338272A (en) | 1986-08-04 | 1986-08-04 | Photosemiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6338272A true JPS6338272A (en) | 1988-02-18 |
JPH0459790B2 JPH0459790B2 (en) | 1992-09-24 |
Family
ID=16108594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61181886A Granted JPS6338272A (en) | 1986-08-04 | 1986-08-04 | Photosemiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6338272A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212501A (en) * | 1991-04-30 | 1993-05-18 | Minolta Camera Kabushiki Kaisha | Image recording apparatus with a laser optical unit |
US5260570A (en) * | 1991-04-30 | 1993-11-09 | Minolta Camera Kabushiki Kaisha | Laser beam scanning system utilized in an image forming apparatus |
EP0582958A2 (en) * | 1992-08-07 | 1994-02-16 | Matsushita Electric Industrial Co., Ltd. | A semiconductor laser device, an optical device and a method of producing the same |
JPH09205251A (en) * | 1995-12-29 | 1997-08-05 | Ind Technol Res Inst | Plastic molding apparatus for semiconductor laser |
EP1467417A2 (en) * | 2003-04-09 | 2004-10-13 | Citizen Electronics Co., Ltd. | Light emitting diode lamp |
EP1622205A2 (en) * | 2004-07-29 | 2006-02-01 | Schott AG | Electronic package incorporating electronic components generating and/or receiving light-based signals |
JP2011244413A (en) * | 2010-05-13 | 2011-12-01 | Sekonix Co Ltd | Ir receiver, and liquid crystal shutter 3d glasses having the same |
KR20170131275A (en) * | 2016-05-19 | 2017-11-29 | 엘지이노텍 주식회사 | Flash module and Mobile Device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113387A (en) * | 1979-02-22 | 1980-09-01 | Sanyo Electric Co Ltd | Light emitting diode indicator |
JPS57183763U (en) * | 1981-05-18 | 1982-11-20 | ||
JPS5815965U (en) * | 1981-07-24 | 1983-01-31 | 日産自動車株式会社 | Vehicle relay device |
JPS59205774A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Semiconductor light-emitting element |
-
1986
- 1986-08-04 JP JP61181886A patent/JPS6338272A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55113387A (en) * | 1979-02-22 | 1980-09-01 | Sanyo Electric Co Ltd | Light emitting diode indicator |
JPS57183763U (en) * | 1981-05-18 | 1982-11-20 | ||
JPS5815965U (en) * | 1981-07-24 | 1983-01-31 | 日産自動車株式会社 | Vehicle relay device |
JPS59205774A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Semiconductor light-emitting element |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5212501A (en) * | 1991-04-30 | 1993-05-18 | Minolta Camera Kabushiki Kaisha | Image recording apparatus with a laser optical unit |
US5260570A (en) * | 1991-04-30 | 1993-11-09 | Minolta Camera Kabushiki Kaisha | Laser beam scanning system utilized in an image forming apparatus |
EP0582958A2 (en) * | 1992-08-07 | 1994-02-16 | Matsushita Electric Industrial Co., Ltd. | A semiconductor laser device, an optical device and a method of producing the same |
EP0582958A3 (en) * | 1992-08-07 | 1994-07-27 | Matsushita Electric Ind Co Ltd | A semiconductor laser device, an optical device and a method of producing the same |
US5373519A (en) * | 1992-08-07 | 1994-12-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, an optical device and a method of producing the same |
JPH09205251A (en) * | 1995-12-29 | 1997-08-05 | Ind Technol Res Inst | Plastic molding apparatus for semiconductor laser |
EP1467417A2 (en) * | 2003-04-09 | 2004-10-13 | Citizen Electronics Co., Ltd. | Light emitting diode lamp |
EP1467417A3 (en) * | 2003-04-09 | 2009-07-22 | Citizen Electronics Co., Ltd. | Light emitting diode lamp |
EP1622205A3 (en) * | 2004-07-29 | 2006-02-08 | Schott AG | Electronic package incorporating electronic components generating and/or receiving light-based signals |
EP1622205A2 (en) * | 2004-07-29 | 2006-02-01 | Schott AG | Electronic package incorporating electronic components generating and/or receiving light-based signals |
US7638758B2 (en) | 2004-07-29 | 2009-12-29 | Schott Ag | Electronic package incorporating electronic components generating and/or receiving light-based coded signals |
JP2011244413A (en) * | 2010-05-13 | 2011-12-01 | Sekonix Co Ltd | Ir receiver, and liquid crystal shutter 3d glasses having the same |
KR20170131275A (en) * | 2016-05-19 | 2017-11-29 | 엘지이노텍 주식회사 | Flash module and Mobile Device |
CN109154762A (en) * | 2016-05-19 | 2019-01-04 | Lg 伊诺特有限公司 | Flash modules and terminal including flash modules |
EP3460569A4 (en) * | 2016-05-19 | 2020-01-08 | LG Innotek Co., Ltd. | Flash module and terminal comprising same |
US10809596B2 (en) | 2016-05-19 | 2020-10-20 | Lg Innotek Co., Ltd. | Flash module and terminal comprising same |
CN109154762B (en) * | 2016-05-19 | 2021-10-26 | 苏州乐琻半导体有限公司 | Flash module and terminal including the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0459790B2 (en) | 1992-09-24 |
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LAPS | Cancellation because of no payment of annual fees |