JPS6338272A - Photosemiconductor device - Google Patents

Photosemiconductor device

Info

Publication number
JPS6338272A
JPS6338272A JP61181886A JP18188686A JPS6338272A JP S6338272 A JPS6338272 A JP S6338272A JP 61181886 A JP61181886 A JP 61181886A JP 18188686 A JP18188686 A JP 18188686A JP S6338272 A JPS6338272 A JP S6338272A
Authority
JP
Japan
Prior art keywords
light
chip
optical semiconductor
fresnel lens
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61181886A
Other languages
Japanese (ja)
Other versions
JPH0459790B2 (en
Inventor
Shigeru Aoyama
茂 青山
Shiro Ogata
司郎 緒方
Maki Yamashita
山下 牧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP61181886A priority Critical patent/JPS6338272A/en
Publication of JPS6338272A publication Critical patent/JPS6338272A/en
Publication of JPH0459790B2 publication Critical patent/JPH0459790B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02253Out-coupling of light using lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the directivity of a photosemiconductor device with relatively high intensity thereby to provide a high sensitivity with good condensing efficiency by providing a micro Fresnel lens in a window formed at a light passing position. CONSTITUTION:An element chip 4 is mounted on a heat sink 3, and the chip 4 is LD, LED, PD or APD, and covered with a cap 5. The cap 5 is secured to a mount 1 by normal method, such as can sealing, bonding or fusion-bonding. A window 5a is opened at the top (upper surface) of the cap 5, i.e., at a position of passing the emitted light of the chip 4 or the incident light to the chip 4, a micro Fresnel lens 6 made of transparent resin is mounted thereat, and the lens 6 is secured by bonding to the inner periphery of the window 6a at the peripheral edge. The finely formed surface formed with an uneven part of the lens 6 is so disposed as to direct the inside of the cap 5.

Description

【発明の詳細な説明】 発明の背景 この発明は光半導体装置に関する。光半導体装置とは1
発光もしくは受光の単機能、または発光および受光の両
機能をもつ半導体装置を意味し。
DETAILED DESCRIPTION OF THE INVENTION BACKGROUND OF THE INVENTION This invention relates to optical semiconductor devices. What is an optical semiconductor device?1
Refers to a semiconductor device that has a single function of emitting or receiving light, or a semiconductor device that has both functions of emitting and receiving light.

発光装置、受光装置1発光受光装置等を含む概念である
This concept includes a light emitting device, a light receiving device, a light emitting device, and the like.

レーザ・ダイオード(LD)、発光ダイオード(LED
)などの発光素子から出射される光は広がりをもつ発散
光であるために、この光を利用するためには、一般にこ
の発光素子の前面に別途にコリメート・レンズを設けて
平行光に変換することが多い。しかしながら、コリメー
ト量レンズを設けるとこの発光素子を利用した装置が大
型化することは避けられず、光軸調整や焦点距離調整な
どが必要となる。また、LDの出射光はその広がり角が
異方性をもつので楕円錐状に発散する。したがって1通
常の1枚のレンズではこれを完全にコリメートすること
はできず、充分にコリメートされた光を得るためには組
レンズや非球面レンズを使用しなければならないので高
価となる。
Laser diode (LD), light emitting diode (LED)
) Light emitted from a light-emitting element such as a light-emitting element is a wide, diverging light, so in order to utilize this light, a separate collimating lens is generally provided in front of the light-emitting element to convert it into parallel light. There are many things. However, if a collimating lens is provided, a device using this light emitting element will inevitably become larger, and optical axis adjustment, focal length adjustment, etc. will be required. Furthermore, the light emitted from the LD has anisotropic spread angle, so it diverges into an elliptical cone shape. Therefore, it is not possible to completely collimate the light with a single ordinary lens, and in order to obtain sufficiently collimated light, a set of lenses or an aspherical lens must be used, which is expensive.

他方、フォトダイオード(PD)、アバランシェ・フォ
トダイオード(APD)などの受光素子において、入射
光を効率よくその受光面上に集光さぜるためにも、従来
は外部にレンズを設ける必要があった。
On the other hand, in light-receiving elements such as photodiodes (PDs) and avalanche photodiodes (APDs), it has conventionally been necessary to provide an external lens in order to efficiently focus incident light onto the light-receiving surface. Ta.

発明の概要 この発明は、新しいタイプの小形の光学系を光半導体素
子チップ近傍に設けることによって上記の問題点を解決
することを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems by providing a new type of compact optical system near an optical semiconductor element chip.

この発明は、光半導体チップを窓付きキャップによって
実装するタイプの光半導体装置において、光通過位置に
あけられた上記の窓にマイクロ・フレネル・レンズを設
けたことを特徴とする。
The present invention is an optical semiconductor device of a type in which an optical semiconductor chip is mounted by a cap with a window, and is characterized in that a micro Fresnel lens is provided in the window formed at a light passage position.

光゛ト導体チップが発光素子チップの場合には。When the optical conductor chip is a light emitting element chip.

発光素子からの出射光が上記マイクロ・フレネル・レン
ズによってほぼ平行化されるようにすることが好ましく
、また光半導体チップが受光素子チップの場合には、上
記マイクロ・フレネル・レンズの焦点を受光素子の受光
面」二にほぼ位置させることが好ましい。
It is preferable that the light emitted from the light emitting element be substantially collimated by the micro Fresnel lens, and when the optical semiconductor chip is a light receiving element chip, the focus of the micro Fresnel lens is set to be parallel to the light receiving element. It is preferable that the light-receiving surface be located approximately at the second light-receiving surface.

光半導体チップが7発光と受光の両機能をもつ発光受光
素子チップの場合には1−記マイクロ・フレネル・レン
ズをこれに適した位置、形状とする。たとえば、中央部
が発光部で周囲に受光部があるような素子においては、
中央部からの出射光が平行光となって外部に出力され、
外部からの入射光の多くが周囲の受光部に集まるような
2つの焦点をもつフレネル・レンズを作製するとよい。
In the case where the optical semiconductor chip is a light emitting/receiving element chip having both light emitting and light receiving functions, the micro Fresnel lens (1) is placed in a position and shape suitable for this purpose. For example, in a device that has a light emitting part in the center and a light receiving part around it,
The light emitted from the center becomes parallel light and is output to the outside.
It is preferable to fabricate a Fresnel lens with two focal points so that most of the incident light from the outside is focused on the surrounding light-receiving areas.

さらに光半導体チップがLDであり、その出射光の発散
角が方向によって異なる場合には、フレネル・レンズの
パターンを方向に応じて焦点距離が異なるような形状と
することによって、はぼ完全なコリメート光を得るよう
にすることもできる。
Furthermore, if the optical semiconductor chip is an LD and the divergence angle of the emitted light differs depending on the direction, almost perfect collimation can be achieved by making the pattern of the Fresnel lens such that the focal length differs depending on the direction. It can also be made to receive light.

この発明によると7発光素rチップに対してはその出射
光がほぼ平行化されるので、比較的高強度(高輝度)で
指向性がよくなり、受光素子チップに対しては入射光が
受光面上に集光されるので集光効率がよく高感度となる
According to this invention, the emitted light from the 7 light-emitting element chip is almost parallelized, resulting in relatively high intensity (high brightness) and good directivity, and the incident light is received by the light-receiving element chip. Since the light is focused on the surface, the light collection efficiency is good and the sensitivity is high.

また1発光、受光素子チップを問わず、マイクロ・フレ
ネル・レンズはプラスチック成形することが可能である
から生産性がよく安価に提供できるとともに、マイクロ
・フレネル・レンズが素子チップのキャップに固定され
ているから光軸のずれ等が生じることがなく耐環境性に
すぐれたものとなり、さらに小型、軽量化が期待できる
In addition, regardless of whether it is a single light-emitting or light-receiving element chip, the micro Fresnel lens can be molded in plastic, so it is highly productive and can be provided at low cost. Because of this, the optical axis does not shift, resulting in excellent environmental resistance, and further downsizing and weight reduction can be expected.

実施例の説明 第1図および第2図を参照して、いくつかの端子2を有
するステムないしはマウント1上にサブマウントないし
はヒート・シンク3が設けられ。
DESCRIPTION OF THE EMBODIMENTS Referring to FIGS. 1 and 2, a submount or heat sink 3 is provided on a stem or mount 1 having several terminals 2. In FIG.

このヒート・シンク3に素子チップ4が取付けられてい
る。素子チップ4は、上述したようにLD、LED、P
D、APD等のチップである。
An element chip 4 is attached to this heat sink 3. As mentioned above, the element chip 4 includes LD, LED, P
D, APD, etc. chips.

素子チップ4にはキャップ5が被せられている。The element chip 4 is covered with a cap 5.

キャップ5は、キャンシール、接若、溶着その他の通常
のやり方でマウント1に固定される。
The cap 5 is fixed to the mount 1 by can sealing, welding, welding, or other conventional methods.

キャップ5の頂部(」二面)すなわち素子チップ4の出
射光のまたは素子チップ4へ入射光の通過位置には窓5
aがあけられており、ここに透明樹脂製のマイクロやフ
レネル・レンズ6が取付けられている。このフレネル・
レンズ6はその周縁において窓5aの内周面に接着によ
って固定される。好ましくは、第2図に示されているよ
うにフレネル・レンズ6の凹凸が形成された微細加工面
がキャップ5の内側を向くように配置される。このこと
によって、この微細加工面の外力からの保護とレンズ特
性の劣化の防止とが図られる。キャップ5の窓5aの外
側に保護ガラスを設けると一層よい。
There is a window 5 at the top (two sides) of the cap 5, that is, at the position where the light emitted from the element chip 4 or the light incident on the element chip 4 passes.
A is opened, and a transparent resin micro or Fresnel lens 6 is attached thereto. This Fresnel
The lens 6 is fixed at its peripheral edge to the inner peripheral surface of the window 5a by adhesive. Preferably, as shown in FIG. 2, the Fresnel lens 6 is arranged so that the micro-machined surface on which the concavo-convex portion is formed faces the inside of the cap 5. This protects the microfabricated surface from external forces and prevents deterioration of lens characteristics. It is even better to provide a protective glass outside the window 5a of the cap 5.

素子チップ4が発光素子(LD、LEDなど)の場合に
は、素子4からの出射光がマイクロ・フレネル・レンズ
6によってほぼ平行化されるように、このレンズ6の位
置および焦点が定められる。また素子チップ4が受光素
子(PD、APDなど)の場合には、入射光がこの素子
4の受光面上にほぼ集光されるようにマイクロ・フレネ
ル・レンズ6の位置、焦点等が決定される。
When the element chip 4 is a light emitting element (LD, LED, etc.), the position and focus of the micro Fresnel lens 6 are determined so that the light emitted from the element 4 is substantially collimated by the micro Fresnel lens 6. Further, when the element chip 4 is a light receiving element (PD, APD, etc.), the position, focus, etc. of the micro Fresnel lens 6 are determined so that the incident light is almost focused on the light receiving surface of the element 4. Ru.

とくに素子チップ4がLDの場合には、その出射光の広
がり角は異方性を示し、第3図に示すようにX方向とY
方向とでは発散角が異なる。このため、出射光の横断面
は楕円形となる。このような出射光をほぼ完全にコリメ
ートさせるためには、第4図に示すような楕円形パター
ンをもっフレネル・レンズを用いるとよい。
In particular, when the element chip 4 is an LD, the spread angle of the emitted light exhibits anisotropy, and as shown in FIG.
The divergence angle differs depending on the direction. Therefore, the cross section of the emitted light is elliptical. In order to almost completely collimate such emitted light, it is preferable to use a Fresnel lens having an elliptical pattern as shown in FIG.

第1図において、素子チップ4の電極は対応する端子2
にワイヤ・ボンディングされているのはいうまでもない
In FIG. 1, the electrodes of the element chip 4 are connected to the corresponding terminals 2.
Needless to say, it is wire bonded to the

このようなマイクロ・フレネル。レンズ6は射出成形そ
の他のやり方によって透明樹脂で一体成形することがで
きる。
Micro Fresnel like this. The lens 6 can be integrally molded from transparent resin by injection molding or other methods.

この樹脂成形のためのマイクロ・フレネル・レンズの雌
型は種々のやり方でこれをつくることができるが、たと
えば次のようにして作製すればよい。
The female mold of the micro Fresnel lens for resin molding can be made in various ways, for example, as follows.

所定の基板上に電子線レジストを塗布し、電子線描画法
によりレジスト」二にマイクロ・フレネル・レンズ・パ
ターンを描画し、その後、このレジストを現像する。そ
して、基板上の残膜レジスト・パターンをドライ・エツ
チングによって基板に転写する。この基板が雌型となる
(特願昭61−3419参照)。
An electron beam resist is applied onto a predetermined substrate, a micro Fresnel lens pattern is drawn on the resist by electron beam lithography, and then this resist is developed. Then, the remaining resist pattern on the substrate is transferred to the substrate by dry etching. This substrate becomes a female mold (see Japanese Patent Application No. 61-3419).

または、上記の残膜レジスト・パターンを雄型として電
鋳法によって雌型を形成する。すなわち、残膜レジスト
・パターンに金属をめっきし。
Alternatively, a female mold is formed by electroforming using the above residual film resist pattern as a male mold. That is, the remaining resist pattern is plated with metal.

その後、残膜パターンおよび基板を有機溶剤等で溶解す
ることにより、金属めっき部分のみを残す(特願昭61
−3420参照)。
After that, by dissolving the remaining film pattern and the substrate with an organic solvent, only the metal plating part is left (patent application No. 61
-3420).

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の実施例を示すもので一部を破断した
斜視図、第2図は第1図のキャップおよびマイクロ・フ
レネル・レンズの断面図、第3図は半導体レーザから出
射する光の発散の様子を示す図、第4図はこのような発
散角をもつ光をコリメートするために好適なマイクロ・
フレネル・レンズ・パターンを示すものである。 4・・・発光または受光素子チップ。 5・・・キャップ。 5a・・・窓。 6・・・マイクロ・フレネル拳レンズ。 以  上
Figure 1 is a partially cutaway perspective view showing an embodiment of the present invention, Figure 2 is a sectional view of the cap and micro Fresnel lens in Figure 1, and Figure 3 is light emitted from a semiconductor laser. Figure 4 is a diagram showing the state of divergence of light, and Figure 4 shows a micro-meter suitable for collimating light with such a divergence angle.
It shows a Fresnel lens pattern. 4... Light emitting or light receiving element chip. 5... Cap. 5a...window. 6...Micro Fresnel fist lens. that's all

Claims (5)

【特許請求の範囲】[Claims] (1)光半導体チップを窓付キャップによって実装する
タイプのものにおいて、光通過位置にあけられた上記の
窓にマイクロ・フレネル・レンズを設けたことを特徴と
する光半導体装置。
(1) An optical semiconductor device of the type in which an optical semiconductor chip is mounted using a cap with a window, characterized in that a micro Fresnel lens is provided in the window opened at a light passage position.
(2)光半導体チップが発光素子チップであり、発光素
子からの発光が上記マイクロ・フレネル・レンズによっ
てほぼ平行化される、特許請求の範囲第(1)項に記載
の光半導体装置。
(2) The optical semiconductor device according to claim (1), wherein the optical semiconductor chip is a light emitting element chip, and the light emitted from the light emitting element is substantially collimated by the micro Fresnel lens.
(3)光半導体チップが受光素子チップであり、上記マ
イクロ・フレネル・レンズの焦点が受光素子の受光面上
にほぼ位置している、特許請求の範囲第(1)項に記載
の光半導体装置。
(3) The optical semiconductor device according to claim (1), wherein the optical semiconductor chip is a light receiving element chip, and the focal point of the micro Fresnel lens is located substantially on the light receiving surface of the light receiving element. .
(4)光半導体チップが発光受光素子である、特許請求
の範囲第(1)項に記載の光半導体装置。
(4) The optical semiconductor device according to claim (1), wherein the optical semiconductor chip is a light emitting light receiving element.
(5)光半導体チップが半導体レーザ・チップであり、
上記マイクロ・フレネル・レンズが半導体レーザ・チッ
プから出射し異方的に拡散する光を平行光に変換するも
のである、特許請求の範囲第(1)項に記載の光半導体
装置。
(5) the optical semiconductor chip is a semiconductor laser chip,
The optical semiconductor device according to claim 1, wherein the micro Fresnel lens converts light emitted from a semiconductor laser chip and anisotropically diffused into parallel light.
JP61181886A 1986-08-04 1986-08-04 Photosemiconductor device Granted JPS6338272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61181886A JPS6338272A (en) 1986-08-04 1986-08-04 Photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61181886A JPS6338272A (en) 1986-08-04 1986-08-04 Photosemiconductor device

Publications (2)

Publication Number Publication Date
JPS6338272A true JPS6338272A (en) 1988-02-18
JPH0459790B2 JPH0459790B2 (en) 1992-09-24

Family

ID=16108594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61181886A Granted JPS6338272A (en) 1986-08-04 1986-08-04 Photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS6338272A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212501A (en) * 1991-04-30 1993-05-18 Minolta Camera Kabushiki Kaisha Image recording apparatus with a laser optical unit
US5260570A (en) * 1991-04-30 1993-11-09 Minolta Camera Kabushiki Kaisha Laser beam scanning system utilized in an image forming apparatus
EP0582958A2 (en) * 1992-08-07 1994-02-16 Matsushita Electric Industrial Co., Ltd. A semiconductor laser device, an optical device and a method of producing the same
JPH09205251A (en) * 1995-12-29 1997-08-05 Ind Technol Res Inst Plastic molding apparatus for semiconductor laser
EP1467417A2 (en) * 2003-04-09 2004-10-13 Citizen Electronics Co., Ltd. Light emitting diode lamp
EP1622205A2 (en) * 2004-07-29 2006-02-01 Schott AG Electronic package incorporating electronic components generating and/or receiving light-based signals
JP2011244413A (en) * 2010-05-13 2011-12-01 Sekonix Co Ltd Ir receiver, and liquid crystal shutter 3d glasses having the same
KR20170131275A (en) * 2016-05-19 2017-11-29 엘지이노텍 주식회사 Flash module and Mobile Device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113387A (en) * 1979-02-22 1980-09-01 Sanyo Electric Co Ltd Light emitting diode indicator
JPS57183763U (en) * 1981-05-18 1982-11-20
JPS5815965U (en) * 1981-07-24 1983-01-31 日産自動車株式会社 Vehicle relay device
JPS59205774A (en) * 1983-05-09 1984-11-21 Nec Corp Semiconductor light-emitting element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113387A (en) * 1979-02-22 1980-09-01 Sanyo Electric Co Ltd Light emitting diode indicator
JPS57183763U (en) * 1981-05-18 1982-11-20
JPS5815965U (en) * 1981-07-24 1983-01-31 日産自動車株式会社 Vehicle relay device
JPS59205774A (en) * 1983-05-09 1984-11-21 Nec Corp Semiconductor light-emitting element

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212501A (en) * 1991-04-30 1993-05-18 Minolta Camera Kabushiki Kaisha Image recording apparatus with a laser optical unit
US5260570A (en) * 1991-04-30 1993-11-09 Minolta Camera Kabushiki Kaisha Laser beam scanning system utilized in an image forming apparatus
EP0582958A2 (en) * 1992-08-07 1994-02-16 Matsushita Electric Industrial Co., Ltd. A semiconductor laser device, an optical device and a method of producing the same
EP0582958A3 (en) * 1992-08-07 1994-07-27 Matsushita Electric Ind Co Ltd A semiconductor laser device, an optical device and a method of producing the same
US5373519A (en) * 1992-08-07 1994-12-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, an optical device and a method of producing the same
JPH09205251A (en) * 1995-12-29 1997-08-05 Ind Technol Res Inst Plastic molding apparatus for semiconductor laser
EP1467417A2 (en) * 2003-04-09 2004-10-13 Citizen Electronics Co., Ltd. Light emitting diode lamp
EP1467417A3 (en) * 2003-04-09 2009-07-22 Citizen Electronics Co., Ltd. Light emitting diode lamp
EP1622205A3 (en) * 2004-07-29 2006-02-08 Schott AG Electronic package incorporating electronic components generating and/or receiving light-based signals
EP1622205A2 (en) * 2004-07-29 2006-02-01 Schott AG Electronic package incorporating electronic components generating and/or receiving light-based signals
US7638758B2 (en) 2004-07-29 2009-12-29 Schott Ag Electronic package incorporating electronic components generating and/or receiving light-based coded signals
JP2011244413A (en) * 2010-05-13 2011-12-01 Sekonix Co Ltd Ir receiver, and liquid crystal shutter 3d glasses having the same
KR20170131275A (en) * 2016-05-19 2017-11-29 엘지이노텍 주식회사 Flash module and Mobile Device
CN109154762A (en) * 2016-05-19 2019-01-04 Lg 伊诺特有限公司 Flash modules and terminal including flash modules
EP3460569A4 (en) * 2016-05-19 2020-01-08 LG Innotek Co., Ltd. Flash module and terminal comprising same
US10809596B2 (en) 2016-05-19 2020-10-20 Lg Innotek Co., Ltd. Flash module and terminal comprising same
CN109154762B (en) * 2016-05-19 2021-10-26 苏州乐琻半导体有限公司 Flash module and terminal including the same

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