JPH0459789B2 - - Google Patents
Info
- Publication number
- JPH0459789B2 JPH0459789B2 JP61176787A JP17678786A JPH0459789B2 JP H0459789 B2 JPH0459789 B2 JP H0459789B2 JP 61176787 A JP61176787 A JP 61176787A JP 17678786 A JP17678786 A JP 17678786A JP H0459789 B2 JPH0459789 B2 JP H0459789B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- optical semiconductor
- fresnel lens
- chip
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
発明の背景
この発明は光半導体装置に関する。光半導体装
置とは、発光もしくは受光の単機能、または発光
および受光の両機能をもつ半導体装置を意味し、
発光装置、受光装置、発光装置等を含む概念であ
る。DETAILED DESCRIPTION OF THE INVENTION BACKGROUND OF THE INVENTION This invention relates to optical semiconductor devices. Optical semiconductor device means a semiconductor device with a single function of emitting or receiving light, or a semiconductor device with both functions of emitting and receiving light,
This concept includes a light emitting device, a light receiving device, a light emitting device, etc.
レーザ・ダイオード（LD）、発光ダイオード
（LED）などの発光素子から出射される広がりを
もつ光をほぼ平行光に変換して効率よく空中伝搬
または他の媒体中を伝搬させるために、またフオ
トダイオード（PD）、アバランシエ・フオトダイ
オード（APD）などの受光素子において、入射
光を効率よくその受光面上に集光させるために、
従来から次のような種々の実装のやり方が採用さ
れていた。 In order to convert the spread light emitted from light emitting devices such as laser diodes (LDs) and light emitting diodes (LEDs) into nearly parallel light for efficient propagation through the air or other media, photodiodes are also used. (PD), avalanche photodiode (APD), etc., in order to efficiently focus incident light on the light receiving surface of the photodiode (APD).
Conventionally, the following various implementation methods have been adopted.
(A) 上記の素子チツプを格納するパツケージの外
面にレンズを設ける。(A) A lens is provided on the outer surface of the package that houses the above element chip.
(B) LEDにおいて、チツプの形状とくに発光面
よりも上部の部分の形状をドーム形とする。(B) For LEDs, the shape of the chip, especially the part above the light-emitting surface, is dome-shaped.
しかしながら、上記(A)においては、外部にレン
ズを設けるために形状が比較的大きくなりかつ重
くなる、レンズと素子チツプとの光軸調整がむず
かしく、また、振動、温度変化などに弱く耐環境
性が悪い、高価である等の問題点がある。また上
記(B)においては、作製プロセスが複雑になる、出
射光の指向性が必ずしもよくない、等の問題があ
る。 However, in (A) above, since the lens is provided externally, the size is relatively large and heavy, it is difficult to adjust the optical axis between the lens and the element chip, and it is weak against vibrations and temperature changes, and has poor environmental resistance. There are problems such as poor quality and high price. Furthermore, in (B) above, there are problems such as the manufacturing process becoming complicated and the directivity of the emitted light not necessarily being good.
発明の概要
この発明は、新しいタイプの光学系を導入する
ことによつて上記の問題点を解決することを目的
とする。SUMMARY OF THE INVENTION The present invention aims to solve the above problems by introducing a new type of optical system.
この発明は、光半導体チツプを樹脂モールドに
よつて実装するタイプのものにおいて、モールド
樹脂面上の光通過位置にマイクロ・フレネル・レ
ンズを、上記モールド樹脂と一体的に上記モール
ド樹脂そのものによつて形成したことを特徴とす
る。 The present invention is of a type in which an optical semiconductor chip is mounted using a resin mold, and a micro Fresnel lens is provided at a light passing position on the mold resin surface, integrally with the mold resin itself. It is characterized by the fact that it has been formed.
光半導体チツプが発光素子チツプの場合には、
発光素子からの出射光が上記マイクロ・フレネ
ル・レンズによつてほぼ平行化されるようにする
ことが好ましく、また光半導体チツプが受光素子
チツプの場合には、上記マイクロ・フレネル・レ
ンズの焦点を受光素子の受光面上にほぼ位置させ
ることが好ましい。 When the optical semiconductor chip is a light emitting element chip,
It is preferable that the light emitted from the light emitting element be substantially collimated by the micro Fresnel lens, and when the optical semiconductor chip is a light receiving element chip, the focal point of the micro Fresnel lens should be It is preferable to position it substantially on the light-receiving surface of the light-receiving element.
光半導体チツプが、発光と受光の両機能をもつ
発光受光素子チツプの場合には上記マイクロ・フ
レネル・レンズをこれに適した位置、形状とす
る。たとえば、中央部が発光部で周囲に受光部が
あるような素子においては、中央部からの出射光
が平行光となつて外部に出力され、外部からの入
射光の多くが周囲の受光部に集まるような２つの
焦点をもつフレネル・レンズを作製するとよい。 When the optical semiconductor chip is a light-emitting and light-receiving element chip having both light-emitting and light-receiving functions, the micro Fresnel lens is positioned and shaped appropriately. For example, in a device with a light emitting section in the center and a light receiving section around it, the light emitted from the center becomes parallel light and is output to the outside, and much of the light incident from the outside reaches the surrounding light receiving sections. It is preferable to create a Fresnel lens with two focal points that converge.
光半導体素子チツプのモールド成形金型に、あ
らかじめマイクロ・フレネル・レンズのスタンパ
を形成しておくことにより、素子チツプの樹脂モ
ールドと同時にマイクロ・フレネル・レンズを成
形することが可能である。 By forming a micro Fresnel lens stamper in advance on a molding die for an optical semiconductor element chip, it is possible to mold the micro Fresnel lens simultaneously with the resin mold of the element chip.
この発明によると、発光素子チツプに対しては
その出射光がほぼ平行化されるので、比較的高強
度（高輝度）で指向性がよくなり、受光素子チツ
プに対しては入射光が受光面上に集光されるので
集光効率がよく高感度となる。 According to this invention, the light emitted from the light-emitting element chip is almost parallelized, resulting in relatively high intensity (high brightness) and good directivity, and the light incident on the light-receiving element chip is directed toward the light-receiving surface. Since the light is focused upward, the light collection efficiency is good and the sensitivity is high.
また、受光、受光素子チツプを問わず、モール
ド成形であるから生産性がよく安価に提供できる
とともに、マイクロ・フレネル・レンズはモール
ド樹脂そのものによつて形成され、かつモールド
樹脂と一体的に形成されているため素子チツプと
マイクロ・フレネル・レンズとが一体的に結合し
ているから光軸のずれ等が生じることがなく耐環
境性にすぐれたものとなり、さらに小型、軽量化
が期待できる。 In addition, regardless of whether the light receiving element or the light receiving element chip is molded, it is highly productive and can be provided at low cost.The micro Fresnel lens is formed from the mold resin itself, and is formed integrally with the mold resin. Since the element chip and the micro Fresnel lens are integrally combined, the optical axis does not shift, resulting in excellent environmental resistance, and further downsizing and weight reduction can be expected.
実施例の説明
図面を参照して、いくつかの端子２を有するス
テムないしはマウント１上にサブマウントないし
はヒート・シンク３が設けられ、このヒート・シ
ンク３に素子チツプ４が取付けられている。素子
チツプ４は、上述したようにLD、LED、PD、
APD等のチツプである。この素子チツプ４が透
明樹脂によつてモールドされている。円筒状モー
ルド樹脂部を符号５で示す。このモールド部５の
上面に平板状のマイクロ・フレネル・レンズ６
が、モールド樹脂部５の透明樹脂そのものによつ
て形成され、かつモールド樹脂部５と一体的に形
成されている。DESCRIPTION OF THE EMBODIMENTS Referring to the drawings, a submount or heat sink 3 is provided on a stem or mount 1 having several terminals 2, and a device chip 4 is mounted on the heat sink 3. As mentioned above, the element chip 4 includes LD, LED, PD,
It is a chip for APD etc. This element chip 4 is molded with transparent resin. The cylindrical molded resin part is indicated by the reference numeral 5. A flat micro Fresnel lens 6 is placed on the upper surface of this mold part 5.
is formed of the transparent resin itself of the molded resin part 5, and is formed integrally with the molded resin part 5.
素子チツプ４が発光素子（LD、LEDなど）の
場合には、素子４からの出射光がマイクロ・フレ
ネル・レンズ６によつてほぼ平行化されるよう
に、このレンズ６の位置および焦点が定められ
る。また素子チツプ４が受光素子（PD、APDな
ど）の場合には、入射光がこの素子４の受光面に
ほぼ集光させるようにマイクロ・フレネル・レン
ズ６の位置、焦点等が決定される。 When the element chip 4 is a light emitting element (LD, LED, etc.), the position and focus of the micro Fresnel lens 6 are determined so that the light emitted from the element 4 is almost collimated by the micro Fresnel lens 6. It will be done. Further, when the element chip 4 is a light receiving element (PD, APD, etc.), the position, focus, etc. of the micro Fresnel lens 6 are determined so that the incident light is almost focused on the light receiving surface of the element 4.
素子チツプの電極は対応する端子２にワイヤ・
ボンデイングされているのはいうまでもない。 The electrodes of the element chip are wired to the corresponding terminal 2.
Needless to say, it is bonded.
このようなマイクロ・フレネル・レンズ６を樹
脂モールド５に一体的に形成するためには、モー
ルドの成形金型にマイクロ・フレネル・レンズの
スタンパ（雌型）をあらかじめ作製しておけばよ
い。 In order to integrally form such a micro Fresnel lens 6 in the resin mold 5, a micro Fresnel lens stamper (female mold) may be prepared in advance in the molding die.
マイクロ・フレネル・レンズの雌型は種々のや
り方でこれをつくることができるが、たとえば次
のようにして作製すればよい。 The female mold of the micro Fresnel lens can be made in various ways, for example, as follows.
所定の基板上に電子線レジストを塗布し、電子
線描画法によりレジスト上にマイクロ・フレネ
ル・レンズ・パターンを描画し、その後、このレ
ジストを現像する。そして、基板上の残膜レジス
ト・パターンをドライ・エツチングによつて基板
に転写する。この基板が雌型となる（特願昭61−
3419参照）。 An electron beam resist is applied onto a predetermined substrate, a micro Fresnel lens pattern is drawn on the resist by electron beam lithography, and then this resist is developed. Then, the remaining resist pattern on the substrate is transferred to the substrate by dry etching. This board becomes the female mold (patent application 1986-
3419).
または、上記の残膜レジスト・パターンを雄型
として電鋳法によつて雌型を形成する。すなわ
ち、残膜レジスト・パターンに金属をめつきし、
その後、残膜パターンおよび基板を有機溶剤等で
溶解することにより、金属めつき部分のみを残す
（特願昭61−3420参照）。 Alternatively, a female mold is formed by electroforming using the above residual film resist pattern as a male mold. In other words, the remaining resist pattern is plated with metal,
Thereafter, by dissolving the remaining film pattern and the substrate with an organic solvent or the like, only the metal-plated parts are left (see Japanese Patent Application No. 61-3420).
図面はこの発明の実施例を示すもので、一部を
破断して示す斜視図である。
４……発光または受光素子チツプ、５……透明
樹脂モールド部、６……マイクロ・フレネル・レ
ンズ。
The drawing shows an embodiment of the invention, and is a partially cut away perspective view. 4... Light emitting or light receiving element chip, 5... Transparent resin mold part, 6... Micro Fresnel lens.
Claims (1)
するタイプのものにおいて、モールド樹脂面上の
光通過位置に回折型マイクロ・フレネル・レンズ
を、上記モールド樹脂と一体的に上記モールド樹
脂そのものによつて形成したことを特徴とする光
半導体装置。 ２ 光半導体チツプが発光素子チツプであり、発
光素子からの発光が上記マイクロ・フレネル・レ
ンズによつてほぼ平行化される、特許請求の範囲
第１項に記載の光半導体装置。 ３ 光半導体チツプが受光素子チツプであり、上
記マイクロ・フレネル・レンズの焦点が受光素子
の受光面上にほぼ位置している、特許請求の範囲
第１項に記載の光半導体装置。 ４ 光半導体チツプが発光、受光素子である、特
許請求の範囲第１項に記載の光半導体装置。[Claims] 1. In a type in which an optical semiconductor chip is mounted using a resin mold, a diffractive micro-Fresnel lens is provided at a light passing position on the mold resin surface, and is integrated with the mold resin. An optical semiconductor device characterized in that it is formed from resin itself. 2. The optical semiconductor device according to claim 1, wherein the optical semiconductor chip is a light emitting element chip, and the light emitted from the light emitting element is substantially collimated by the micro Fresnel lens. 3. The optical semiconductor device according to claim 1, wherein the optical semiconductor chip is a light receiving element chip, and the focal point of the micro Fresnel lens is located substantially on the light receiving surface of the light receiving element. 4. The optical semiconductor device according to claim 1, wherein the optical semiconductor chip is a light emitting/light receiving element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61176787A JPS6333877A (en) | 1986-07-29 | 1986-07-29 | Photo-semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61176787A JPS6333877A (en) | 1986-07-29 | 1986-07-29 | Photo-semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6333877A JPS6333877A (en) | 1988-02-13 |
| JPH0459789B2 true JPH0459789B2 (en) | 1992-09-24 |
Family
ID=16019840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61176787A Granted JPS6333877A (en) | 1986-07-29 | 1986-07-29 | Photo-semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6333877A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0290685A (en) * | 1988-09-28 | 1990-03-30 | Nec Corp | Semiconductor photodetecting element |
| JP2792722B2 (en) * | 1990-07-16 | 1998-09-03 | 三菱電機株式会社 | Semiconductor light emitting device |
| US5825054A (en) * | 1995-12-29 | 1998-10-20 | Industrial Technology Research Institute | Plastic-molded apparatus of a semiconductor laser |
| JP2002305261A (en) * | 2001-01-10 | 2002-10-18 | Canon Inc | Electronic component and its manufacturing method |
| JP2004158635A (en) * | 2002-11-06 | 2004-06-03 | Stanley Electric Co Ltd | Surface-mounted chip led and manufacturing method thereof |
| KR101008687B1 (en) * | 2010-05-13 | 2011-01-17 | 주식회사 세코닉스 | Ir receiver and liquid crystal shutter glasses having the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113387A (en) * | 1979-02-22 | 1980-09-01 | Sanyo Electric Co Ltd | Light emitting diode indicator |
| JPS5815965U (en) * | 1981-07-24 | 1983-01-31 | 日産自動車株式会社 | Vehicle relay device |
| JPS59205774A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Semiconductor light-emitting element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57183763U (en) * | 1981-05-18 | 1982-11-20 |
-
1986
- 1986-07-29 JP JP61176787A patent/JPS6333877A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55113387A (en) * | 1979-02-22 | 1980-09-01 | Sanyo Electric Co Ltd | Light emitting diode indicator |
| JPS5815965U (en) * | 1981-07-24 | 1983-01-31 | 日産自動車株式会社 | Vehicle relay device |
| JPS59205774A (en) * | 1983-05-09 | 1984-11-21 | Nec Corp | Semiconductor light-emitting element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6333877A (en) | 1988-02-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI301181B (en) | Illumination device, motor-vehicle headlight and method for the production of an illumination device | |
| US7626250B2 (en) | High power LED package and fabrication method thereof | |
| TWI811204B (en) | Vertical cavity surface emitting laser (vcsel) illuminator package structure and method of manufacturing a vcsel illuminator package | |
| US7519287B2 (en) | Electronic flash, imaging device and method for producing a flash of light having a rectangular radiation pattern | |
| JP2002324918A (en) | Semiconductor module equipped with reflector | |
| US7717587B2 (en) | Light source device | |
| US20100165635A1 (en) | Led unit | |
| US20080142822A1 (en) | Light emitting diode package and method of manufacturing the same | |
| JP2003031005A (en) | Light-emitting diode illumination device | |
| JP2009506527A5 (en) | ||
| US20100270579A1 (en) | Light emitting device package and lighting system including the same | |
| CN105706316A (en) | High contrast grating optoelectronics | |
| US6781209B1 (en) | Optoelectronic component with thermally conductive auxiliary carrier | |
| JPH0918058A (en) | Semiconductor light-emitting device | |
| JPH0744029Y2 (en) | LED module | |
| JPH0459789B2 (en) | ||
| JPH1012929A (en) | Mounting structure for light emitting diode | |
| US20190386464A1 (en) | Opto-electronic device having a backside illuminating vcsel array with integrated diffractive optical elements (doe), diffuser and/or lens | |
| CN107871789A (en) | Transmitting-receiving integrated optical-electrical converter | |
| JPH0459790B2 (en) | ||
| US7510892B2 (en) | Light emitting diode structure and manufacturing method thereof | |
| KR100845041B1 (en) | Lens, light emitting diode and lighting apparatus having the same | |
| JP2002111068A (en) | Reflective light-emitting diode | |
| KR101365619B1 (en) | Light emitting diode having coupling structure | |
| KR100779120B1 (en) | Side emitting light emitting diode package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |