JPS6336145B2 - - Google Patents
Info
- Publication number
- JPS6336145B2 JPS6336145B2 JP55132933A JP13293380A JPS6336145B2 JP S6336145 B2 JPS6336145 B2 JP S6336145B2 JP 55132933 A JP55132933 A JP 55132933A JP 13293380 A JP13293380 A JP 13293380A JP S6336145 B2 JPS6336145 B2 JP S6336145B2
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- conductivity type
- mos transistor
- layer
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 230000003071 parasitic effect Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 230000006378 damage Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55132933A JPS5758362A (en) | 1980-09-26 | 1980-09-26 | Mos transistor analog switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55132933A JPS5758362A (en) | 1980-09-26 | 1980-09-26 | Mos transistor analog switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5758362A JPS5758362A (en) | 1982-04-08 |
| JPS6336145B2 true JPS6336145B2 (US06265458-20010724-C00056.png) | 1988-07-19 |
Family
ID=15092887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55132933A Granted JPS5758362A (en) | 1980-09-26 | 1980-09-26 | Mos transistor analog switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5758362A (US06265458-20010724-C00056.png) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2733796B2 (ja) * | 1990-02-13 | 1998-03-30 | セイコーインスツルメンツ株式会社 | スイッチ回路 |
| JP2012054694A (ja) * | 2010-08-31 | 2012-03-15 | On Semiconductor Trading Ltd | 双方向スイッチおよびそれを用いたスイッチ回路 |
-
1980
- 1980-09-26 JP JP55132933A patent/JPS5758362A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5758362A (en) | 1982-04-08 |
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