JPS6335096B2 - - Google Patents
Info
- Publication number
- JPS6335096B2 JPS6335096B2 JP58031217A JP3121783A JPS6335096B2 JP S6335096 B2 JPS6335096 B2 JP S6335096B2 JP 58031217 A JP58031217 A JP 58031217A JP 3121783 A JP3121783 A JP 3121783A JP S6335096 B2 JPS6335096 B2 JP S6335096B2
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- organic silicon
- silicon compound
- pattern
- dimensional accuracy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58031217A JPS59155933A (ja) | 1983-02-25 | 1983-02-25 | 微細パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58031217A JPS59155933A (ja) | 1983-02-25 | 1983-02-25 | 微細パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59155933A JPS59155933A (ja) | 1984-09-05 |
| JPS6335096B2 true JPS6335096B2 (enExample) | 1988-07-13 |
Family
ID=12325261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58031217A Granted JPS59155933A (ja) | 1983-02-25 | 1983-02-25 | 微細パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59155933A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60214532A (ja) * | 1984-04-11 | 1985-10-26 | Nippon Telegr & Teleph Corp <Ntt> | パタ−ン形成方法 |
| JPH05211115A (ja) * | 1992-10-15 | 1993-08-20 | Oki Electric Ind Co Ltd | パターン形成方法 |
| JP3874989B2 (ja) * | 2000-03-21 | 2007-01-31 | シャープ株式会社 | パターンの形成方法 |
-
1983
- 1983-02-25 JP JP58031217A patent/JPS59155933A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59155933A (ja) | 1984-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1053090A (en) | Resist reflow method for making submicron patterned resist masks | |
| JPH04115515A (ja) | パターン形成方法 | |
| JPH0122728B2 (enExample) | ||
| JPS6335096B2 (enExample) | ||
| EP0104235A4 (en) | METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS. | |
| JPH0425693B2 (enExample) | ||
| JPS6386550A (ja) | 多層配線層の形成方法 | |
| KR960008568B1 (ko) | 반도체 콘텍트 제조방법 | |
| KR960014056B1 (ko) | 감광막 패턴 형성방법 | |
| KR970006930B1 (ko) | 반도체소자의 미세패턴 형성방법 | |
| KR100309089B1 (ko) | 반도체 소자의 미세패턴 형성방법 | |
| KR960002239B1 (ko) | 레지스트막 패턴 형성방법 | |
| KR900001406B1 (ko) | 고체 촬상소자의 제조방법 | |
| US3676126A (en) | Planar technique for producing semiconductor microcomponents | |
| JPS5943564A (ja) | 半導体集積回路 | |
| JPS63308316A (ja) | 半導体装置の製造方法 | |
| JPH09204036A (ja) | 位相シフトマスクの製造方法 | |
| JPS59155936A (ja) | 微細パタ−ン形成方法 | |
| JPS5825234A (ja) | レジストパタ−ンの形成方法 | |
| JPH04291721A (ja) | 薄膜回路の製造方法 | |
| JPH0471331B2 (enExample) | ||
| JPS6132524A (ja) | パタ−ン形成方法 | |
| JPS5996732A (ja) | 半導体装置の製造方法 | |
| JPS6362322A (ja) | 半導体素子の製造方法 | |
| JPH05175114A (ja) | 半導体装置の製造方法 |