JPS633417A - Development of resist - Google Patents

Abstract

PURPOSE:To form fine resist pattern easily by a method wherein, when a semiconductor substrate is held in a developer 3 to remove resist selectively, the developer is impressed with an electric field. CONSTITUTION:An exposed resist 2a is resolved into ion hydroxide 4. At this time, the ion hydroxide 4 impressed with an electric field in the vertical direction moves toward a resist film 2 to be easily fed to the reactive surface inside a hole type pattern. Through these procedures, a fine resist pattern can be formed easily.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for developing a resist, and particularly to the formation of a resist pattern in the manufacture of semiconductor integrated circuits.

[Conventional technology]

Conventionally, to develop a resist made by adding a quinone diazide material as a photosensitizer to a phenol novolac resin material, an alkaline developer containing tetramethylammonium hydroxide as a main component is applied to the surface of a semiconductor substrate on which a resist film has been formed. A method in which the semiconductor substrate is held by tension and interfacial tension and the developing solution is stirred by moving the semiconductor substrate, or a developing solution is placed on the resist film by surface tension and interfacial tension, and the semiconductor substrate is moved to the extent that the developing solution on the substrate does not fall off the substrate. The most common method was to rotate at a low speed.

[Problems to be Solved by the Invention] In the conventional resist development described above, the movement of hydroxyl groups in the developer is carried out only by diffusion and agitation by moving the semiconductor substrate. When forming a resist, the supply of hydroxyl groups is insufficient for the dissolution reaction of the resist, and development is difficult.

An object of the present invention is to ensure that hydroxyl groups are sufficiently supplied to the reaction surface of the dissolution reaction of the resist in the development of a resist in the formation of a fine pattern, such as a fine hole-like pattern.
It is an object of the present invention to provide a method for developing a resist that can easily form a fine pattern.

[Means for solving problems]

The resist developing method of the present invention includes a developing step in which a semiconductor substrate having an exposed resist film is held in a developing solution, or a developing solution is held on the semiconductor substrate and the resist is selectively removed. It is constructed by applying an electric field to the liquid.

Note that effective development can be carried out by applying the electric field to the developer in a direction perpendicular to the resist film.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings. FIGS. 1(a) to 1(c) are schematic cross-sectional views of essential parts shown in order of steps to explain an embodiment of the present invention. 1st
In Figures (a) to (c), 1 is a semiconductor substrate made of silicon, 2 is a film with a thickness of 1.5 μm made of positive photoresist, for example 0FPR800 manufactured by Tokyo Ohka Kogyo, and 2a is the film. 3 is a selectively exposed area, and 3 is a developing solution, such as NMD manufactured by Tokyo Ohka Kogyo Co., Ltd.
-3, 4 is hydroxyl ion contained in the developer, and 5
is the direction of the applied electric field.

First, as shown in FIG. 1(a), the exposed resist 2a is dissolved in hydroxide ions 4. Then, as shown in FIG. Therefore, in the vicinity where the reaction is occurring, hydroxide ions 4 are rapidly consumed and become insufficient. Normally, hydroxide ions are supplied to the reaction surface by diffusion, but with the Iei thin hole pattern, hydroxide ions are not sufficiently supplied to the reaction surface. When an electric field is applied in the vertical direction as shown in FIG. 1(b), hydroxide ions 4 in the developer move toward the resist film and are easily supplied to the reaction surface inside the hole-like pattern. , the narrow exposed area is quickly developed, and a fine resist pattern as shown in FIG. 1(C) can be easily formed.

〔Effect of the invention〕

As explained above, the present invention has the advantage that by applying an electric field to the developer, hydroxide ions can be well supplied to the fine development area, thereby facilitating the formation of fine resist patterns.

[Brief explanation of drawings]

FIGS. 1A to 1C are schematic cross-sectional views of main parts shown in order of steps to explain the structure and operation of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Resist, 2a... Exposed resist, 3... Developer, 4... Hydroxyl ion in developer, 5... Applied electric field.

Claims (2)

[Claims] (1) Applying an electric field to the developer during a development process in which a semiconductor substrate having an exposed resist film is held in a developer, or a developer is held on the semiconductor substrate and the resist is selectively removed. A resist developing method characterized by: (2) The resist developing method according to claim (1), wherein the direction in which the electric field is applied to the developer is perpendicular to the resist film.