JPH01283931A - Resist pattern forming method - Google Patents
Resist pattern forming methodInfo
- Publication number
- JPH01283931A JPH01283931A JP11526288A JP11526288A JPH01283931A JP H01283931 A JPH01283931 A JP H01283931A JP 11526288 A JP11526288 A JP 11526288A JP 11526288 A JP11526288 A JP 11526288A JP H01283931 A JPH01283931 A JP H01283931A
- Authority
- JP
- Japan
- Prior art keywords
- resist layer
- development
- resist pattern
- infrared rays
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000018109 developmental process Effects 0.000 claims description 12
- 230000007261 regionalization Effects 0.000 claims description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 abstract description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 3
- 239000001569 carbon dioxide Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract 2
- 239000003513 alkali Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 2
- -1 1,2-naphthoquinonediazide sulfonic acid ester Chemical class 0.000 description 1
- KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体製造プロセスで使用するレジストパタ
ーン形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resist pattern forming method used in a semiconductor manufacturing process.
近年、半導体装置における高集積化および高密度化の進
展に伴い、その中に形成される回路パターンも微細化さ
れてきている。さらには、高信顛度化および高性能化へ
の要求も高くなり、このため製造プロセスの最適化や形
成パターンの高精度化等が不可欠なものとなっている。2. Description of the Related Art In recent years, with the progress of higher integration and higher density in semiconductor devices, the circuit patterns formed therein have also become finer. Furthermore, the demand for higher reliability and higher performance has also increased, making it essential to optimize manufacturing processes and improve the precision of formed patterns.
従来、このような要望に応えるべく第２図に示す工程か
らなるレジストパターン形成方法が採用されている。す
なわち、予めポジ型のフォトレジストを塗布することに
よりレジスト層が形成された基板を加熱し、次にこの基
板上のレジスト層に露光用の光源を用いてパターンを転
写した後、現像によって所定のレジストパターンを形成
してから、このレジストパターンをマスクとしてエツチ
ング処理を施すことにより行うものである。Conventionally, in order to meet such demands, a resist pattern forming method consisting of the steps shown in FIG. 2 has been adopted. That is, a substrate on which a resist layer has been formed by applying a positive photoresist in advance is heated, a pattern is transferred to the resist layer on the substrate using an exposure light source, and a predetermined pattern is formed by development. This is done by forming a resist pattern and then performing an etching process using this resist pattern as a mask.
ところで、この種のレジストパターン形成方法において
は、ポジ型のフォトレジストとしてナフトキノンジアジ
ドを感光基とするものが広く使用されている。この場合
、例えば感光剤として２，３゜４ トリヒドロキシベン
ゾフェノンの１．２−ナフトキノンジアジドスルフォン
酸エステルをクレゾールノボラックレジンに添加したフ
ォトレジストでは、露光によりナフトキノンジアジドが
光反応を起こしてインデンカルボン酸に変化し、この露
光部分がアルカリ現像液に可溶となる。これにより、現
像時に選択的に露光部分が除去され、所定のパタ−ンを
得ることができる。By the way, in this type of resist pattern forming method, a positive type photoresist having naphthoquinonediazide as a photosensitive group is widely used. In this case, for example, in a photoresist in which 1,2-naphthoquinonediazide sulfonic acid ester of 2,3°4 trihydroxybenzophenone is added as a photosensitizer to cresol novolac resin, the naphthoquinonediazide undergoes a photoreaction upon exposure to indene carboxylic acid. The exposed area becomes soluble in an alkaline developer. Thereby, the exposed portion is selectively removed during development, and a predetermined pattern can be obtained.
ところが、従来のレジストパターン形成方法においては
、フォトレジストに紫外線（特に短波長紫外線）に対し
て光吸収率が高いものを使用しており、このためレジス
ト層の底部で紫外線が減衰してしまうことから、露光時
に多量の露光エネルギーをもつ紫外線をレジスト層上に
照射することになり、レジスト層の上部では露光過多が
発生していた。この結果、現像時に必要以上にレジスト
層の一部が溶解する所謂レジスト層の膜減りが増大して
高精度なレジストパターンを得ることができないという
問題があった。However, in conventional resist pattern formation methods, a photoresist that has a high light absorption rate for ultraviolet rays (particularly short wavelength ultraviolet rays) is used, and as a result, ultraviolet rays are attenuated at the bottom of the resist layer. Therefore, during exposure, ultraviolet rays having a large amount of exposure energy are irradiated onto the resist layer, resulting in overexposure on the upper part of the resist layer. As a result, there is a problem in that a portion of the resist layer is dissolved more than necessary during development, so that so-called film loss of the resist layer increases, making it impossible to obtain a highly accurate resist pattern.
本発明はこのような事情に鑑みてなされたもので、現像
時におけるレジスト層の膜減りを抑制することができ、
もって高精度なレジストパターンを得ることができるレ
ジストパターン形成方法を提供するものである。The present invention has been made in view of the above circumstances, and can suppress the film loss of the resist layer during development.
The object of the present invention is to provide a resist pattern forming method that allows a highly accurate resist pattern to be obtained.
本発明に係るレジストパターン形成方法は、レジスト層
の表面に現像前に赤外線を照射するものである。In the resist pattern forming method according to the present invention, the surface of the resist layer is irradiated with infrared rays before development.
本発明においては、現像前に照射する赤外線によってレ
ジスト層の表面を熱硬化させる。In the present invention, the surface of the resist layer is thermally hardened by irradiating infrared rays before development.
以下、本発明のレジストパターン形成方法につき、第１
図を用いて説明する。Hereinafter, the first method for forming a resist pattern of the present invention will be described.
This will be explained using figures.
先ず、予め半導体基板に例えば０ＦＰＲ−８００（東京
応化社製）のポジ型フォトレジストを塗布することによ
り厚さ１．２μｍのレジスト層を形成する。First, a resist layer having a thickness of 1.2 μm is formed by applying a positive photoresist such as 0FPR-800 (manufactured by Tokyo Ohka Co., Ltd.) to a semiconductor substrate in advance.
次いで、ホットプレート上で基板を加熱（プリベーク）
する。しかる後、レジスト層の表面に赤外線として炭酸
ガスパルスレーザ（波長１０．６μｌ）ヲ１０−３秒間
照射し、所定のマスクを介して２４Ｂｎｍ付近のＫｒＦ
レーザ光を用いて露光してから、テトラメチルアンモニ
ウムハイドロオキサイド（２，３８％の水溶液）からな
る有機アルカリ現像液によって現像する。Next, heat the substrate on a hot plate (prebake)
do. After that, the surface of the resist layer was irradiated with a carbon dioxide gas pulse laser (wavelength: 10.6 μl) for 10 −3 seconds as infrared rays, and KrF around 24 Bnm was irradiated through a predetermined mask.
After exposure using laser light, development is performed using an organic alkaline developer consisting of tetramethylammonium hydroxide (2.38% aqueous solution).
このようにして、半導体基板に対してレジストパターン
を形成することができる。In this way, a resist pattern can be formed on the semiconductor substrate.
このようなレジストパターン形成方法においては、露光
前に照射する赤外線によってレジスト層の表面が熱硬化
して現像液による溶解速度を低くすることができ、現像
時にレジスト層の膜減りを抑制することができる。In such a resist pattern forming method, the surface of the resist layer is thermally hardened by the infrared rays irradiated before exposure, making it possible to reduce the rate of dissolution by the developer and suppressing film thinning of the resist layer during development. can.
なお、本実施例においては、赤外線として炭酸ガスパル
スレーザからなるものを使用したが、本発明はこれに限
定されるものではなく、他の赤外線を使用しても勿論よ
い。In this embodiment, a carbon dioxide gas pulse laser was used as the infrared ray, but the present invention is not limited to this, and it is of course possible to use other infrared rays.
また、本実施例においては、レジスト層に対する赤外線
の照射を露光前である場合を示したが、本発明は露光後
であっても実施例と同様の効果を奏する。すなわち要す
るに、本発明における赤外線の照射は現像前に行うもの
であるならよい。Further, in this example, a case was shown in which the resist layer was irradiated with infrared rays before exposure, but the present invention produces the same effects as in the example even after exposure. In other words, in the present invention, infrared ray irradiation may be performed as long as it is performed before development.
さらに、本発明におけるレジスト層に対する赤外線の照
射時間は前述した実施例に限定されず、その時間は１０
−３秒より短い時間に設定すれば差し支えない。Furthermore, the irradiation time of infrared rays to the resist layer in the present invention is not limited to the above-mentioned embodiment, and the time is 10
There is no problem if you set it to a time shorter than -3 seconds.
以上説明したように本発明によれば、レジスト層の表面
に現像前に赤外線を照射するので、この赤外線によって
レジスト層の表面が熱硬化して現像液による溶解速度を
低くすることができる。したがって、現像時にレジスト
層の膜減りを抑制することができるから、高精度なレジ
ストパターンを確実に得ることができる。As explained above, according to the present invention, the surface of the resist layer is irradiated with infrared rays before development, so that the surface of the resist layer is thermally hardened by the infrared rays, and the rate of dissolution by the developer can be reduced. Therefore, since thinning of the resist layer during development can be suppressed, a highly accurate resist pattern can be reliably obtained.
第１図は本発明に係るレジストパターン形成方法におけ
る工程図、第２図は従来のレジストパターン形成方法に
おける工程図である。
代 理 人 大岩増雄
第１図
第２図FIG. 1 is a process diagram of a resist pattern forming method according to the present invention, and FIG. 2 is a process diagram of a conventional resist pattern forming method. Agent Masuo Oiwa Figure 1 Figure 2
Claims (1)
基板上のレジスト層を露光した後、これを現像するレジ
ストパターン形成方法において、前記レジスト層の表面
に現像前に赤外線を照射することを特徴とするレジスト
パターン形成方法。In a resist pattern forming method in which a substrate on which a resist layer has been formed in advance is heated, the resist layer on the substrate is exposed, and then developed, the surface of the resist layer is irradiated with infrared rays before development. Characteristic resist pattern formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11526288A JPH01283931A (en) | 1988-05-11 | 1988-05-11 | Resist pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11526288A JPH01283931A (en) | 1988-05-11 | 1988-05-11 | Resist pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01283931A true JPH01283931A (en) | 1989-11-15 |
Family
ID=14658318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11526288A Pending JPH01283931A (en) | 1988-05-11 | 1988-05-11 | Resist pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01283931A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02230252A (en) * | 1989-03-03 | 1990-09-12 | Nec Corp | Pattern forming method |
| US6124081A (en) * | 1994-11-28 | 2000-09-26 | Mitsubishi Denki Kabushiki Kaisha | Method of forming a resist pattern |
| WO2002087882A1 (en) * | 2001-04-26 | 2002-11-07 | Mitsubishi Chemical Corporation | Method and device for regenerative processing and printing |
-
1988
- 1988-05-11 JP JP11526288A patent/JPH01283931A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02230252A (en) * | 1989-03-03 | 1990-09-12 | Nec Corp | Pattern forming method |
| US6124081A (en) * | 1994-11-28 | 2000-09-26 | Mitsubishi Denki Kabushiki Kaisha | Method of forming a resist pattern |
| WO2002087882A1 (en) * | 2001-04-26 | 2002-11-07 | Mitsubishi Chemical Corporation | Method and device for regenerative processing and printing |
| US6877428B2 (en) | 2001-04-26 | 2005-04-12 | Mitsubishi Heavy Industries, Ltd. | Regenerative plate making and printing process, and plate making and printing apparatus |
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