JPS61116838A - Formation of resist pattern - Google Patents

Formation of resist pattern

Info

Publication number
JPS61116838A
JPS61116838A JP59239102A JP23910284A JPS61116838A JP S61116838 A JPS61116838 A JP S61116838A JP 59239102 A JP59239102 A JP 59239102A JP 23910284 A JP23910284 A JP 23910284A JP S61116838 A JPS61116838 A JP S61116838A
Authority
JP
Japan
Prior art keywords
substrate
resist
far
orthoquinondiazide
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59239102A
Other languages
Japanese (ja)
Inventor
Naoyuki Sugiura
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59239102A priority Critical patent/JPS61116838A/en
Publication of JPS61116838A publication Critical patent/JPS61116838A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To improve rectangularity of section by transferring a mask pattern using near ultraviolet ray beam to a resist film on an Si substrate, giving far ultraviolet ray beam to the entire part and executing the development processing. CONSTITUTION:A positive UV resist film 2 of mixture of novolac resin and orthoquinondiazide is formed on a Si substrate 1. It is baked for 100sec from the rear side of substrate at 70-80 deg.C. Thereafter, the surface is irradiated with near UV ray 4 in the wavelength of 320nm or more through the mask 3 and thereby the resist at the exposing part 2b changes to orthoquinondiazide carboxyl acid. Next, the entire part is irradiated with the far UV beam 5 with wavelength of 320nm of less from the rear surface of substrate 1 while heating at 90-110 deg.C, and the resist of unexposed portion 2a absorbs the far UV beam and shows bridging reaction, lowering solubility to the developer. When developed, only the part 2a remains. According to this structure, rectangularity of resist pattern can be improved very easily.
JP59239102A 1984-11-13 1984-11-13 Formation of resist pattern Pending JPS61116838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59239102A JPS61116838A (en) 1984-11-13 1984-11-13 Formation of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59239102A JPS61116838A (en) 1984-11-13 1984-11-13 Formation of resist pattern

Publications (1)

Publication Number Publication Date
JPS61116838A true JPS61116838A (en) 1986-06-04

Family

ID=17039834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59239102A Pending JPS61116838A (en) 1984-11-13 1984-11-13 Formation of resist pattern

Country Status (1)

Country Link
JP (1) JPS61116838A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01243052A (en) * 1988-03-24 1989-09-27 Matsushita Electron Corp Resist pattern forming method
US4933263A (en) * 1987-02-17 1990-06-12 Matsushita Electronics Corporation Forming method of resist pattern
JPH03255613A (en) * 1990-03-05 1991-11-14 Matsushita Electron Corp Resist pattern forming method
JPH054293A (en) * 1990-10-20 1993-01-14 Sumitomo Rubber Ind Ltd Manufacture of green tire and device therefor
US6231024B1 (en) 1998-10-19 2001-05-15 Kabushikikaisha Kugin Formwork forming unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933263A (en) * 1987-02-17 1990-06-12 Matsushita Electronics Corporation Forming method of resist pattern
JPH01243052A (en) * 1988-03-24 1989-09-27 Matsushita Electron Corp Resist pattern forming method
JPH03255613A (en) * 1990-03-05 1991-11-14 Matsushita Electron Corp Resist pattern forming method
JPH054293A (en) * 1990-10-20 1993-01-14 Sumitomo Rubber Ind Ltd Manufacture of green tire and device therefor
US6231024B1 (en) 1998-10-19 2001-05-15 Kabushikikaisha Kugin Formwork forming unit

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