JPS6335010B2 - - Google Patents
Info
- Publication number
- JPS6335010B2 JPS6335010B2 JP13546879A JP13546879A JPS6335010B2 JP S6335010 B2 JPS6335010 B2 JP S6335010B2 JP 13546879 A JP13546879 A JP 13546879A JP 13546879 A JP13546879 A JP 13546879A JP S6335010 B2 JPS6335010 B2 JP S6335010B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- processed
- photoresist film
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000005909 ethyl alcohol group Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
本発明は半導体素子製造等におけるホト工程に
関し、特にホトレジストの現像処理方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photo process in the manufacture of semiconductor devices, and more particularly to a method for developing photoresist.
ホトマスクの製造や半導素子の製造或いは金属
板等に微細加工をする際等においてホト工程が多
く用いられている。 2. Description of the Related Art Photoprocesses are often used in the production of photomasks, semiconductor devices, and microfabrication of metal plates and the like.
現在用いられている標準的なホト工程は、ホト
マスク基板、半導体基板或いは金属板等の被処理
基板表面に塗布されたホトレジスト膜に所定のパ
ターンに従つて露光処理を施こし、次いで該ホト
レジスト膜に現像処理を施こして不要部分を除去
し、次いで水洗及び乾燥工程を経て所定のパター
ンを有するホトレジスト膜を形成し、しかる後、
該ホトレジスト膜をマスクとして前記被処理基板
表面をエツチングした後、前記ホトレジスト膜を
除去する。 In the standard photo process currently used, a photoresist film coated on the surface of a substrate to be processed, such as a photomask substrate, a semiconductor substrate, or a metal plate, is exposed to light according to a predetermined pattern, and then the photoresist film is exposed. A developing process is performed to remove unnecessary parts, and then a photoresist film having a predetermined pattern is formed through a water washing and drying process, and then,
After etching the surface of the substrate to be processed using the photoresist film as a mask, the photoresist film is removed.
上記一連の工程中、露光処理を施こされたホト
レジスト膜表面は現像液に対する濡れ性が必ずし
も良好とは言い難く、そのため被処理基板を現像
液中に浸漬する等の方法で現像処理を施こしても
ホトレジスト膜表面に気泡が付着しホトレジスト
膜と現像液との反応を一様に開始させることがで
きない。 During the above series of steps, the surface of the photoresist film that has been exposed to light does not necessarily have good wettability with the developer, so the development process is carried out by immersing the substrate in the developer. However, bubbles adhere to the surface of the photoresist film, making it impossible to uniformly initiate the reaction between the photoresist film and the developer.
またホトレジスト膜上にゴミ等が付着している
と、その部分が本来現像処理によつて除去される
べき領域であつても除去することができず、パタ
ーンの乱れを生じる。 Further, if dust or the like adheres to the photoresist film, it cannot be removed even if it is originally an area that should be removed by the development process, resulting in pattern disturbance.
昨今のごとくICが益々微細化し且つ高密度化
する状況下にあつては上述のような問題はたとえ
それが微小なものであつても半導体素子製造或い
はマスク製造に大きな悪影響を及ぼす。 In the current situation where ICs are becoming increasingly finer and more dense, the above-mentioned problems, even if they are minute, have a major negative impact on semiconductor element manufacturing or mask manufacturing.
本発明の目的は上記問題点を解消して改良され
たホトレジストの現像処理方法を提供することに
ある。本発明のホトレジストの現像処理方法の特
徴は、被処理基板表面に塗布され露光処理を施さ
れたポジレジスト膜の表面を、エチルアルコール
を含む溶液により所定の厚さ一様に除去した後、
現像処理を施すことにある。 An object of the present invention is to solve the above-mentioned problems and provide an improved method for developing photoresist. The feature of the photoresist development method of the present invention is that after removing the surface of the positive resist film coated on the surface of the substrate to be processed and subjected to exposure treatment to a predetermined uniform thickness with a solution containing ethyl alcohol,
The purpose is to perform development processing.
以下本発明のホトレジストの現像処理方法の一
実施例を図面を用いて説明する。 An embodiment of the photoresist development method of the present invention will be described below with reference to the drawings.
第１図は上記一実施例を示す要部断面図であ
る。同図ａにおいて１は半導体基板等の被処理基
板、２はホトエツチング法を用いて所定のパター
ンを形成すべき二酸化シリコン（SiO2）膜等の
被処理膜、３は所定のパターンを形成し上記ホト
エツチングにおけるマスクとされるホトレジスト
膜である。上記ホトレジスト膜３は本実施例にお
いてはAZ135U（シプレー社製ノボラツク樹脂系
ポジレジスト）を用いて形成した。上記ホトレジ
スト膜３に通常の方法に従つて露光処理を施こ
す。図において４は所定のパターンに従つて照射
された照射光を示し、３′は前記ホトレジスト膜
３の露光部分を示す。上述の露光処理のあと同図
ｂに示すごとくホトレジスト膜３，３′の表面層
３″は雰囲気等の影響を受けて現像液と反応しに
くい状態となつており、更に微小なゴミ等の異物
が付着する場合もある。そこでこの両者を除去す
るため本実施例では水（H2O）50％とエチルア
ルコール（C2H2OH）50％の混合液でホトレジス
ト膜３，３′，３″の表面処理を行なつた。上記混
合液はノボラツク樹脂系ホトレジストをごく僅か
溶解するので、該混合液に被処理基板１を浸漬
し、次いで水洗することにより同図ｃに示すごと
く、前記表面層３″が除去され、同時に異物５を
除去されホトレジスト膜３，３′の活性な表面が
露呈する。そこでこれを現像液に浸漬し、次いで
水洗及び乾燥工程を施こすことにより同図ｄに示
すように前記ホトレジスト膜の露光部分３′が除
去されて開口６が形成される。この現像処理は通
常の方法と何ら変える必要はない。 FIG. 1 is a sectional view of a main part showing the above embodiment. In the figure a, 1 is a substrate to be processed such as a semiconductor substrate, 2 is a film to be processed such as a silicon dioxide (SiO 2 ) film on which a predetermined pattern is to be formed using a photoetching method, and 3 is a film to be processed such as a silicon dioxide (SiO 2 ) film on which a predetermined pattern is to be formed. This is a photoresist film used as a mask in photoetching. In this example, the photoresist film 3 was formed using AZ135U (novolak resin positive resist manufactured by Shipley). The photoresist film 3 is exposed to light according to a conventional method. In the figure, 4 indicates the irradiation light irradiated according to a predetermined pattern, and 3' indicates the exposed portion of the photoresist film 3. After the above-mentioned exposure process, as shown in Figure b, the surface layer 3'' of the photoresist films 3, 3' is in a state where it is difficult to react with the developer due to the influence of the atmosphere, etc., and foreign matter such as minute dust is formed. Therefore, in order to remove both of them, in this example, the photoresist films 3, 3', 3 are coated with a mixed solution of 50% water (H 2 O) and 50% ethyl alcohol (C 2 H 2 OH). '' surface treatment was performed. The above-mentioned mixed solution dissolves the novolak resin photoresist very slightly, so by immersing the substrate 1 to be processed in the mixed solution and then washing it with water, the surface layer 3'' is removed, and at the same time, the surface layer 3'' is removed, as shown in FIG. 5 is removed and the active surface of the photoresist film 3, 3' is exposed.Therefore, this is immersed in a developer, and then washed with water and subjected to a drying process, thereby removing the exposed portion of the photoresist film 3, 3' as shown in FIG. 3' is removed to form an opening 6. There is no need to change this development process in any way from the usual method.
上記現像処理はホトレジスト膜表面が活性化さ
れているので濡れ性がよく従つて現像開始時より
一様に反応が開始され、気泡の付着もなく、しか
も異物の付着もないのでパターンの乱も生じな
い。従つて残留せるホトレジスト膜３は所定のパ
ターンに従つて正確に開口６を形成される。この
あと通常の工程に従いホトレジスト膜３をマスク
として被処理膜２をエツチングして同図ｄに示す
ように開口７を形成し、次いでホトレジスト膜３
を除去することにより同図ｆに示すごとく、被処
理基板１表面の被処理膜２に所定のパターンを正
確に形成することができる。 In the above development process, the surface of the photoresist film is activated, so it has good wettability, so the reaction starts uniformly from the start of development, and there is no adhesion of air bubbles or foreign matter, so pattern irregularities occur. do not have. Therefore, the openings 6 are formed in the remaining photoresist film 3 accurately according to a predetermined pattern. Thereafter, according to the usual process, the film to be processed 2 is etched using the photoresist film 3 as a mask to form an opening 7 as shown in FIG.
As shown in FIG.
上記実施例はホトレジスト膜をAZ135Uを用い
て形成したが、これに代えてOFPR（東京応化工
業社製）等通常用いられる他のホトレジストを使
用してもよい。また表面処理液も上記実施例に限
定されるものではなく、ホトレジストの種類等に
より適宜選択されるべきものである。例えば前記
ノボラツク樹脂系ホトレジストの表面処理におい
ても処理液のエチルアルコールの組成は50〔％〕
ないし100〔％〕の範囲に変更し得る。更に被処理
基板は半導体基板のほか、ホトマスク基板或いは
金属板等であつてもよく、また処理される対象は
被処理基板表面の被処理膜に限定する必要はな
く、被処理基板自身であつてもよいことはもちろ
んである。以上説明したごとく、本発明によれ
ば、ホトレジスト膜の一様な現像処理を行なうこ
とができ、且つパターンの乱れを生じることがな
いので微細パターンを正確に形成することができ
る。 In the above embodiment, the photoresist film was formed using AZ135U, but other commonly used photoresists such as OFPR (manufactured by Tokyo Ohka Kogyo Co., Ltd.) may be used instead. Further, the surface treatment liquid is not limited to the above embodiments, and should be appropriately selected depending on the type of photoresist, etc. For example, in the surface treatment of the novolak resin photoresist, the composition of ethyl alcohol in the treatment solution is 50%.
It can be changed from 100% to 100%. Further, the substrate to be processed may be a photomask substrate, a metal plate, etc. in addition to a semiconductor substrate, and the target to be processed need not be limited to the film to be processed on the surface of the substrate to be processed, but may be the substrate to be processed itself. Of course it's a good thing. As explained above, according to the present invention, a photoresist film can be developed uniformly and a fine pattern can be formed accurately because the pattern is not disturbed.
第１図は本発明のホトレジスト現像処理方法の
実施例を示す要部断面図である。
１……被処理基板、２……被処理膜、３，３′，
３″……ホトレジスト膜、５……異物。
FIG. 1 is a cross-sectional view of essential parts showing an embodiment of the photoresist development processing method of the present invention. 1... Substrate to be processed, 2... Film to be processed, 3, 3',
3″...Photoresist film, 5...Foreign matter.
Claims (1)
たポジレジスト膜の表面を、エチルアルコールを
含む溶液により所定の厚さ一様に除去した後、現
像処理を施すことを特徴とするホトレジスト現像
処理方法。1. A photoresist development process characterized by removing the surface of a positive resist film applied to the surface of a substrate to be processed and subjected to an exposure process to a predetermined thickness uniformly with a solution containing ethyl alcohol, and then performing a development process. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13546879A JPS5659236A (en) | 1979-10-19 | 1979-10-19 | Photoresist developing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13546879A JPS5659236A (en) | 1979-10-19 | 1979-10-19 | Photoresist developing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5659236A JPS5659236A (en) | 1981-05-22 |
| JPS6335010B2 true JPS6335010B2 (en) | 1988-07-13 |
Family
ID=15152411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13546879A Granted JPS5659236A (en) | 1979-10-19 | 1979-10-19 | Photoresist developing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5659236A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4807749B2 (en) * | 2006-09-15 | 2011-11-02 | 東京エレクトロン株式会社 | Exposure and development processing methods |
-
1979
- 1979-10-19 JP JP13546879A patent/JPS5659236A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5659236A (en) | 1981-05-22 |
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