JPS6332854B2 - - Google Patents
Info
- Publication number
- JPS6332854B2 JPS6332854B2 JP55143908A JP14390880A JPS6332854B2 JP S6332854 B2 JPS6332854 B2 JP S6332854B2 JP 55143908 A JP55143908 A JP 55143908A JP 14390880 A JP14390880 A JP 14390880A JP S6332854 B2 JPS6332854 B2 JP S6332854B2
- Authority
- JP
- Japan
- Prior art keywords
- heat resistance
- weight
- lead
- present
- strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
本発明は半導体を要素とする機器に使用するた
めのリード材（リードフレームという）の改良に
関するものである。
一般に半導体を要素とするIC、LSI等の機器
は、何れも半導体の導体ペレツト、リード、ボン
デイングワイヤによつて構成されたものをハーメ
チツクシール、セラミツクシール或はプラスチツ
クシール等により封止したものであり、種々の型
式のものが使用されている。
而して、従来これらの機器のリードにおけるリ
ード材としてはコバール54Fe−29Ni−17Co、Fe
−42Ni合金、りん青銅、Cu−2.4Fe−0.13Zn−
0.04P合金、Cn−0.15Sn−0.01P合金が使用され
ているものである。然しながら上記コバール、
Fe−Ni合金はコストが高いと共に加工性が困難
なため、近時コストの安く、且つ加工性容易な銅
合金系に置きかえらんとしているものである。
しかし、上記の如き銅合金は耐熱性並びに強度
が劣るためリード材として十分な性能を発揮する
ことが出来ないものであつた。従つて、銅合金に
おいて
(a) 熱及び電気の伝導性に優れていること、
(b) 耐熱性が良好なこと、
(c) 曲げ加工性が容易なこと、
(d) 強度が大きいこと、
特にリード材においては曲げ加工性に優れてい
ることが必要であり、曲げ加工性に劣る場合には
リード材として不適である。
からなるリード材の出現が要望されていたもので
あつた。
本発明はかかる要望に応じ鋭意研究を行つた結
果、リードに要求される諸性質を十分に具備しう
るリード材を見出したものである。即ち、本発明
はSn、Znを夫々0.5〜3.0重量％とFeを0.5〜1.4重
量％含有し残部Cuからなる半導体機器用リード
材を得たものである。
このように本発明はCuを基材とし、これにSn、
Zn及びFeの３成分を添加するものであり、Snを
添加することによりリード材に強度並びに耐熱性
を著しく向上せしめることが出来る。又Znを添
加することにより強度を増大せしめると共に鋳塊
の品質を向上することが出来る。更にFeを添加
することにより強度を増大し、耐熱性を向上せし
めるものである。
而して本発明において、Sn及びZnの添加量を
0.5〜3.0重量％に限定した理由は、0.5重量％未満
の場合には強度並びに耐熱性において十分なもの
をうることが出来ず、又3.0重量％を越した場合
には強度並びに耐熱性において優れたものをうる
が、熱及び電気伝導性に対して劣ると共に曲げ加
工性が低下するためである。
又Feを0.5〜1.4重量％としたのは0.5重量％未満
の場合には強度並びに耐熱性に十分なものをうる
ことが出来ず、1.4重量％を越えた場合には熱及
び電気伝導性に劣ると共に曲げ加工性が低下する
ためである。
次に、本発明の実施例について説明する。黒鉛
ルツボを使用して銅を溶解し、その湯面を木炭粉
末にて被覆した状態において、これにZn、Sn及
びFeを順次添加した後、これを鋳造して第１表
に示す如き組成の巾150mm、長さ200mm、厚さ25mm
の鋳塊を得た。
次に、この鋳塊表面を一面あたり2.5mm面削り
した後、熱間加工を行つて厚さ８mm、巾150mmの
板状体とした。然る後焼鈍と冷間加工を繰り返し
て最終板厚0.3mmとした。
なお、最終の中間焼鈍後の圧延率は60％であつ
た。
斯くして得た本発明板状体について各種の特性
を測定した。その結果は第１表に示す通りであ
る。
なお、本発明板状体と比較するためにSn、Zn
及びFeの内１種又は２種を本発明の添加量の範
囲外に添加した組成物について上記と同一の方法
により夫々厚さ0.3mmの板状体（比較例品）並び
に従来のコバール、Cu−Fe−Zn−Ｐ、Cu−Sn
−Ｐについて夫々実施例と同様に特性を測定し
た。その結果は第１表に併記した通りである。
The present invention relates to improvements in lead materials (referred to as lead frames) for use in devices including semiconductors. Devices that use semiconductors, such as ICs and LSIs, generally consist of semiconductor conductor pellets, leads, and bonding wires, which are sealed with hermetic seals, ceramic seals, plastic seals, etc. and various types are used. Conventionally, Kovar 54Fe−29Ni−17Co and Fe were used as lead materials for the leads of these devices.
−42Ni alloy, phosphor bronze, Cu−2.4Fe−0.13Zn−
0.04P alloy and Cn-0.15Sn-0.01P alloy are used. However, the above Kobar,
Fe--Ni alloys are expensive and difficult to work with, so there has recently been an attempt to replace them with copper alloys, which are cheaper and easier to work with. However, the above-mentioned copper alloys have poor heat resistance and strength, and therefore cannot exhibit sufficient performance as lead materials. Therefore, copper alloys (a) have excellent thermal and electrical conductivity, (b) have good heat resistance, (c) are easy to bend, and (d) have high strength. In particular, lead materials need to have excellent bending workability, and if they have poor bending workability, they are unsuitable as lead materials. The emergence of a lead material made of The present invention has been made as a result of extensive research in response to such demands, and has resulted in the discovery of a lead material that can sufficiently provide the various properties required of a lead. That is, the present invention provides a lead material for semiconductor devices which contains Sn and Zn in an amount of 0.5 to 3.0% by weight, and Fe in an amount of 0.5 to 1.4% by weight, with the balance being Cu. In this way, the present invention uses Cu as a base material, and Sn,
Three components, Zn and Fe, are added, and by adding Sn, the strength and heat resistance of the lead material can be significantly improved. Also, by adding Zn, it is possible to increase the strength and improve the quality of the ingot. Furthermore, by adding Fe, strength is increased and heat resistance is improved. Therefore, in the present invention, the amount of Sn and Zn added is
The reason why it is limited to 0.5 to 3.0% by weight is that if it is less than 0.5% by weight, it will not be possible to obtain sufficient strength and heat resistance, and if it exceeds 3.0% by weight, it will not have excellent strength and heat resistance. This is because, although it can be used as a material, it is inferior in thermal and electrical conductivity, and its bending workability is reduced. In addition, when Fe is set at 0.5 to 1.4% by weight, if it is less than 0.5% by weight, sufficient strength and heat resistance cannot be obtained, and if it exceeds 1.4% by weight, the thermal and electrical conductivity will deteriorate. This is because the bending workability is lowered. Next, examples of the present invention will be described. Copper is melted using a graphite crucible, the surface of the melt is coated with charcoal powder, Zn, Sn and Fe are sequentially added to the melt, and then this is cast to form a composition as shown in Table 1. Width 150mm, length 200mm, thickness 25mm
An ingot was obtained. Next, the surface of this ingot was ground by 2.5 mm per side, and then hot worked to form a plate-shaped body with a thickness of 8 mm and a width of 150 mm. After that, annealing and cold working were repeated to obtain a final plate thickness of 0.3 mm. Note that the rolling ratio after the final intermediate annealing was 60%. Various properties of the thus obtained plate-shaped body of the present invention were measured. The results are shown in Table 1. In addition, for comparison with the plate-like body of the present invention, Sn, Zn
A plate-shaped body with a thickness of 0.3 mm (comparative example product) and a conventional Kovar, Cu −Fe−Zn−P, Cu−Sn
-P properties were measured in the same manner as in the examples. The results are shown in Table 1.
【表】【table】
【表】
第１表より明らかの如く、本発明によるリード
材は従来品(1)に比して耐熱性及び引張り強さにお
いて全く遜色ないと共に特に導電率において著し
く優れているものである。又従来品(2)及び(3)に比
して耐熱性及び引張り強さが大巾に改善している
ことが認められた。
以上詳述した如く本発明によれば、耐熱性、引
張り強度並びに導電率等の特性に優れていると共
に安価に製品化しうるため半導体機器用リード材
として極めて有用なものである。[Table] As is clear from Table 1, the lead material according to the present invention is comparable to the conventional product (1) in terms of heat resistance and tensile strength, and is particularly superior in electrical conductivity. It was also observed that heat resistance and tensile strength were significantly improved compared to conventional products (2) and (3). As described in detail above, the present invention has excellent properties such as heat resistance, tensile strength, and electrical conductivity, and can be commercialized at low cost, making it extremely useful as a lead material for semiconductor devices.
Claims (1)
重量％含有し、残部Cuからなる半導体機器用リ
ード材。1 Zn Sn 0.5 to 3.0% by weight and Fe 0.5 to 1.4% by weight
A lead material for semiconductor devices that contains % by weight and the balance is Cu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14390880A JPS5768061A (en) | 1980-10-15 | 1980-10-15 | Lead material for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14390880A JPS5768061A (en) | 1980-10-15 | 1980-10-15 | Lead material for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5768061A JPS5768061A (en) | 1982-04-26 |
| JPS6332854B2 true JPS6332854B2 (en) | 1988-07-01 |
Family
ID=15349871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14390880A Granted JPS5768061A (en) | 1980-10-15 | 1980-10-15 | Lead material for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768061A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06304889A (en) * | 1993-04-21 | 1994-11-01 | Nakatetsuku Kk | Sucker unit and cap boxing device using this sucker unit |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59140341A (en) * | 1983-01-29 | 1984-08-11 | Furukawa Electric Co Ltd:The | Copper alloy for lead frame |
| JPS605550A (en) * | 1983-06-24 | 1985-01-12 | Toshiba Corp | Electronic parts |
| US5882442A (en) * | 1995-10-20 | 1999-03-16 | Olin Corporation | Iron modified phosphor-bronze |
| US6132528A (en) * | 1997-04-18 | 2000-10-17 | Olin Corporation | Iron modified tin brass |
| US5853505A (en) * | 1997-04-18 | 1998-12-29 | Olin Corporation | Iron modified tin brass |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5426219A (en) * | 1977-07-30 | 1979-02-27 | Furukawa Electric Co Ltd:The | Electric conductive copper alloy of superior solderability |
-
1980
- 1980-10-15 JP JP14390880A patent/JPS5768061A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5424811A (en) * | 1977-07-27 | 1979-02-24 | Hitachi Cable Ltd | Copper alloy for lead conductor of semiconductor device |
| JPS5426219A (en) * | 1977-07-30 | 1979-02-27 | Furukawa Electric Co Ltd:The | Electric conductive copper alloy of superior solderability |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06304889A (en) * | 1993-04-21 | 1994-11-01 | Nakatetsuku Kk | Sucker unit and cap boxing device using this sucker unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5768061A (en) | 1982-04-26 |
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