JPS605550A - Electronic parts - Google Patents

Electronic parts

Info

Publication number
JPS605550A
JPS605550A JP11281383A JP11281383A JPS605550A JP S605550 A JPS605550 A JP S605550A JP 11281383 A JP11281383 A JP 11281383A JP 11281383 A JP11281383 A JP 11281383A JP S605550 A JPS605550 A JP S605550A
Authority
JP
Japan
Prior art keywords
alloy
solder
lead frame
weight
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11281383A
Other languages
Japanese (ja)
Other versions
JPS6349380B2 (en
Inventor
Michihiko Inaba
道彦 稲葉
Koichi Tejima
手島 光一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11281383A priority Critical patent/JPS605550A/en
Publication of JPS605550A publication Critical patent/JPS605550A/en
Publication of JPS6349380B2 publication Critical patent/JPS6349380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To obtain an alloy composition adapted for a lead frame and lead wirings having less production intermetallic compound having weak bonding strength at the bonding to a solder by containing Zn as the third additive to Ni or Fe and Sn. CONSTITUTION:When an alloy which contains 0.05-5wt% of Ni or Fe, 0.05-4 wt% of Zn and the residue of Cu is used for an Sn solder electronic part, a preferable result can be obtained. When Ni, Sn and Zn are used as the additives of the alloy, the relationship of Zn >=1/20 (Ni, Sn) by weight to Ni (or Fe) and Sn to Zn is preferable in addition to the above condition. Part of Ni may be replaced by Fe. In this case, the relationship of Zn >=1/20 (Ni, Fe, Sn) is preferably satisfied.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は電子部品に関し、更に詳しくは、民生用製品に
用いられて好適な電子部品に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to electronic components, and more particularly to electronic components suitable for use in consumer products.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

民生用製品例えば半導体装置は高出力、多機能化が要求
されており、しかもこれ等は生産性がよく低価格である
ことが条件とされている。
Consumer products, such as semiconductor devices, are required to have high output and multifunctionality, and these products also require high productivity and low cost.

このような条件を十分満足させるために種々の開発が進
められている。この中でば樹脂モールド等が上記を満す
有力なものであるが、これらにおいても次のような難点
があってこれの開発が要求されている。
Various developments are underway to fully satisfy these conditions. Among these, resin molds and the like are effective in meeting the above requirements, but these also have the following drawbacks, and their development is required.

すなわち製造工程では避けて通れないマウント工程、半
導体素子とリード線とのポンデング工程等があり、これ
に用いられるリード素子であるリードフレームは重要な
部品である。このリードフレームは次のような苛酷な条
件を満足すれば製造工程2価格及び特性等に極めて有利
である。すなわち電気抵抗が小さいこと、表面酸化が少
ないこと、引張り強度が強いこと、延性が十分で曲げ加
工に対し強いこと、高温特性例えば250℃以上におけ
る機械的強度が十分であること、半田とのぬれ性、耐候
性が十分であること等である。
That is, there are unavoidable mounting steps in the manufacturing process, bonding steps between semiconductor elements and lead wires, and the lead frame, which is the lead element used in these steps, is an important component. If this lead frame satisfies the following severe conditions, it is extremely advantageous in terms of manufacturing process, cost, and characteristics. In other words, it must have low electrical resistance, little surface oxidation, high tensile strength, sufficient ductility and resistance to bending, high-temperature properties such as sufficient mechanical strength at temperatures above 250°C, and wettability with solder. These include sufficient durability and weather resistance.

このように種々の条件を全て満−1足するものはなかな
か得がたいが、電気抵抗の小さい銅(Cu)M合金がそ
の内でも上記条件に近い特性を有することが知られてい
る。このCuは導電率が高いこと、加工性が容易である
こと等上記条件には有利な金属であるが、耐熱強度、耐
酸化性2機械的強度等において不十分である。したがっ
て、上記条件を全て満足する金属はないので、できるだ
け多くの特性を発揮する金属を主成分として選定し、こ
れにいくつかの添加成分を混合した合金を用いている。
Although it is difficult to obtain a material that satisfies all of these various conditions, it is known that a copper (Cu)M alloy with low electrical resistance has characteristics that are close to the above conditions. This Cu is a metal that is advantageous in meeting the above conditions such as having high electrical conductivity and easy workability, but is insufficient in terms of heat resistance strength, oxidation resistance, mechanical strength, etc. Therefore, since there is no metal that satisfies all of the above conditions, an alloy is used in which a metal that exhibits as many properties as possible is selected as the main component, and a number of additional components are mixed with this metal.

しかしながら、例えばCuを主成分とし、これにSn及
びPを添加した合金は、強度的に不十分であり、またS
nの代りにFeを添加した合金は、上記の要件を満足す
るまでに至っていない。
However, for example, alloys containing Cu as the main component and to which Sn and P are added have insufficient strength, and
Alloys in which Fe is added instead of n do not yet satisfy the above requirements.

更に、従来のCu基合金にあっては、これを用いたIC
用リードフレームにリード線等を固着する際にSn半田
を用いた場合、特に次の如き不都合な現象が生じた。第
1図は、リードフレーム1をSn −Pb半田2で接合
した場合における接合部の走査型電子顕微鏡による拡大
断面図である。該層は、150℃における300時間経
過後の組織図であり、IC作動中の熱等の負荷による過
酷な条件が揃うことにより組織変化を生じ、半田を構成
する3nがリードフレームのCuと結合していくつかの
層を形成する。第1層はε−Cu3Snからなるa層、
第2層は1− Cua Sn5からなるb層、第3層は
Pbのみ又は極めて高密度のpbからなる0層である。
Furthermore, in the case of conventional Cu-based alloys, ICs using this
When Sn solder is used to secure lead wires, etc. to a lead frame, the following inconvenient phenomena occur. FIG. 1 is an enlarged cross-sectional view of a joint portion taken by a scanning electron microscope when a lead frame 1 is joined with Sn--Pb solder 2. As shown in FIG. The structure of this layer is shown after 300 hours at 150°C, and the structure changes due to harsh conditions such as heat loads during IC operation, and the 3n forming the solder bonds with the Cu of the lead frame. to form several layers. The first layer is an a layer made of ε-Cu3Sn,
The second layer is a b layer made of 1-Cua Sn5, and the third layer is a zero layer made of only Pb or very high density Pb.

この現象が著しい場合は、IC素子の半田付けの信頼性
を維持する上で好ましいものではないO 該現象を防止するには、金ボンディング性低下の原因と
なるSnの添加量を下げ、かつこれに伴うリードフレー
ムの強度低下を防ぐため、Ni又はFeを添加すること
が考えられる。しかしながら、第2図に示したように、
Ni又はFeを添加すると、Ni及びFeとSnとが結
合して、リードフレーム1と半田2との接合面に約0.
5μm厚以下のN1(Fe)−8nからなる金属間化合
物M3が形成される(使用条件は前記と同様)0この金
属化合物層は、ミクロ的に見て、N1(Fe)とSnと
の蜂巣状態を呈している、該層3の形成は、リードフレ
ーム1と半田との接合強度を極度に低下せしめて両者の
剥離原因となるものであり、IC素子の信頼性を低下さ
せるため、緻命的欠点となり得る。
If this phenomenon is significant, it is not desirable for maintaining the reliability of soldering of IC elements.To prevent this phenomenon, it is necessary to reduce the amount of Sn added, which causes a decrease in gold bonding properties, and In order to prevent the strength of the lead frame from decreasing due to this, it is possible to add Ni or Fe. However, as shown in Figure 2,
When Ni or Fe is added, Ni and Fe are combined with Sn, and about 0.0% is added to the bonding surface between the lead frame 1 and the solder 2.
An intermetallic compound M3 consisting of N1(Fe)-8n with a thickness of 5 μm or less is formed (use conditions are the same as above)0 This metal compound layer is microscopically formed as a honeycomb of N1(Fe) and Sn. The formation of this layer 3, which exhibits a state of This can be a disadvantage.

この現象は、Snを含まない場合と比べ、Sn及びNi
又はF”eが合金中に共存する場合に、上記金属間化合
物層の成長が著しく促進され、容易に剥離が起こってし
まう。
This phenomenon is caused by Sn and Ni compared to the case where Sn is not included.
Alternatively, when F''e coexists in the alloy, the growth of the intermetallic compound layer is significantly promoted and peeling easily occurs.

上記の如き剥離の原因は、次のように推定される。すな
わち、リードフレームと半田との接合を強固にするCu
 −Snの固溶状態部分が、N1(Fe)−Snの金属
間化合物層のバリア形成により低下し、CuとSnの相
互拡散が不十分となることにより剥離が起こるものと考
えられる。
The cause of the peeling as described above is estimated as follows. In other words, Cu strengthens the bond between the lead frame and solder.
It is thought that the solid solution state portion of -Sn decreases due to the formation of a barrier of the N1(Fe)-Sn intermetallic compound layer, and the mutual diffusion of Cu and Sn becomes insufficient, resulting in peeling.

以上のことから、Ni、 Fe及びSnの添加量を下げ
て、剥離を防止しなければならないが、Ni又はFeを
添加しないと強度が向上せず、この場合にNi −Sn
 −Cu合金と同等の強度を得るためにはSnを3%以
上添加する必要がある。しかし、Snの増量は、前記の
ように金ボンディング性等圧悪影響を及はす。一方、N
i又はFeの増量は剥離を容易に引き起こす原因となる
From the above, it is necessary to reduce the amount of Ni, Fe, and Sn added to prevent peeling, but the strength will not improve unless Ni or Fe is added, and in this case, Ni-Sn
-In order to obtain the same strength as the Cu alloy, it is necessary to add 3% or more of Sn. However, increasing the amount of Sn adversely affects the isobaric properties of gold bonding, as described above. On the other hand, N
Increasing the amount of i or Fe easily causes peeling.

〔発明の目的〕[Purpose of the invention]

本発明は、電子部品として要求される特性を充分に有し
、かつ半田との接合に伴う接合力の弱い金属間化合物の
生成が極めて少なく、接合力の優れた特性を有する電子
部品を提供することを目的とする。
The present invention provides an electronic component that has sufficient characteristics required as an electronic component, has extremely little generation of intermetallic compounds that have weak bonding strength when bonded with solder, and has excellent bonding strength. The purpose is to

〔発明の概要〕[Summary of the invention]

本発明者らは、Ni又はFe及びSnに第3の添加成分
としてznを合金中に含有せしめることにより、本発明
を完成するに至った。
The present inventors have completed the present invention by incorporating Zn as a third additive component to Ni or Fe and Sn into the alloy.

すなわち、本発明の電子部品は、主成分がCuで、第1
添加成分としてNi又はFeのいずれか1種以上をそれ
ぞれ0.05〜5重凧%、第2添加成分としてSnを0
.05〜4重fA%、第3添加成分としてznを0.1
〜3重N%有する合金から形成されていることを特徴と
する。
That is, in the electronic component of the present invention, the main component is Cu, and the first
0.05 to 5% of one or more of Ni or Fe as an additive component, and 0% of Sn as a second additive component.
.. 05-4fold fA%, 0.1 zn as the third added component
It is characterized by being formed from an alloy having ~3% N.

以下、本発明を更に詳細に説明する。The present invention will be explained in more detail below.

本発明の電子部品としては、例えば、リードフレーム及
びリード線が挙げられる。
Examples of the electronic component of the present invention include a lead frame and a lead wire.

該電子部品に用いられる合金の組成は、Nl又はFeが
それぞれ0.05〜5重量%の範囲、Snが0.05〜
4重量%の範囲、zn fJ’−0,1〜3重量%の範
囲であり、残部がCuからなる。また、該合金の添加成
分としてNi、Sn及びZnを用いる場合は、上記条件
に加えて、Ni (又はFe )及びSnに対するZn
の重量比が、 Zn≧20 (Nl 、Sn ) の関係にあることが好ましい。尚、Nlの一部なFeで
置換することも可能であり、この場合は、Zn≧土(N
i 、 Fe 、 Sn )0 の関係を満足することが好ましい。
The composition of the alloy used in the electronic component is such that Nl or Fe is in a range of 0.05 to 5% by weight, and Sn is in a range of 0.05 to 5% by weight.
4% by weight, zn fJ'-0, 1 to 3% by weight, and the remainder consists of Cu. In addition, when using Ni, Sn and Zn as additive components of the alloy, in addition to the above conditions, Zn for Ni (or Fe) and Sn
It is preferable that the weight ratio of Zn≧20 (Nl, Sn) is satisfied. Note that it is also possible to replace Nl with Fe, which is a part of Nl, and in this case, Zn≧earth(N
It is preferable to satisfy the relationship: i, Fe, Sn)0.

本発明にかかる合金組成において、Ni、Fe及びSn
の添加量がそれぞれ0.05重量%未満である場合は、
電子部品の強度が不十分となり、リードフレーム等にあ
ってはソケットへの挿入困難及び変形という不都合な事
態を招来し、Ni又はFeの添加量が5重量%を超え、
又はSnの添加量が4重量%を超えると、導電率の低下
を招き、熱伝導効果も不十分となる。また、Znの添加
量が0.1重量%未満の場合は、後述するN1(Fe)
集中拡散軽減層がわずかしか形成されず、Ni (Fe
) −Snの拡散結合による金属間化合物を生成してし
まい、3重量%を超えると、金ポンディング性を低下せ
し、めでIC素子の信頼性を損い、歩留が悪くなる。
In the alloy composition according to the present invention, Ni, Fe and Sn
If the amount of each added is less than 0.05% by weight,
The strength of electronic components becomes insufficient, leading to inconvenient situations such as difficulty in inserting lead frames into sockets and deformation.
Alternatively, if the amount of Sn added exceeds 4% by weight, the electrical conductivity decreases and the heat conduction effect becomes insufficient. In addition, when the amount of Zn added is less than 0.1% by weight, N1(Fe) described below
Only a few concentrated diffusion-reducing layers are formed, and Ni (Fe
) An intermetallic compound is generated due to diffusion bonding of -Sn, and if the amount exceeds 3% by weight, the gold bonding property is decreased, the reliability of the IC device is impaired, and the yield is decreased.

更に”I Znの添加量が多い場合は、半田付けの際に
znが瞬時に半田内に拡散し、半田の表面が荒れたり、
接合力が低下する等の種々の問題が発生する。
Furthermore, if a large amount of Zn is added, Zn will instantly diffuse into the solder during soldering, causing the solder surface to become rough or
Various problems occur, such as a decrease in bonding strength.

本発明の電子部品は前記合金から次のようにして製造さ
れる0例えば、リードフレームの場合は、常法に従い、
前記合金からなるインゴットを製造し、これを圧延後、
コイル化し、プレス又はエツチング加工を施すことによ
り得られる。
The electronic component of the present invention is manufactured from the alloy as follows. For example, in the case of a lead frame, according to a conventional method,
After manufacturing an ingot made of the above alloy and rolling it,
It is obtained by coiling and subjecting it to pressing or etching processing.

本発明にかかる合金を用いた場合に前記問題点が解消さ
れる理由を、第3図に基づき説明する。
The reason why the above problems are solved when the alloy according to the present invention is used will be explained based on FIG. 3.

第3図は、Cu−Ni −Sn −Zn 合金のリード
フレームを作製し、該フレームの一部にSn −P・b
半田を溶着後、これを約150℃で300時間強性加熱
した場合における接合部の拡大断面図であり、図中、4
はNi集中拡散軽減層である。すなわち、Sn −p・
b半田で接合した場合は、Ni −Snの金属間化合物
層の形成がほとんど起こらず、これに代ってZn −C
u固溶体のzn濃縮に伴うN1集中拡散軽減層4が形成
されている。該層4はCuに分散しているNiと半田内
のSnとの拡散結合を能率よく軽減もしくは抑制する作
用を有しているため、Cu内におけるNiの移動が制限
され、Nlの安定した分散状態が長期に亘って維持され
ることになる。
Figure 3 shows a lead frame made of a Cu-Ni-Sn-Zn alloy, and a part of the frame is coated with Sn-P・b.
This is an enlarged cross-sectional view of the joint when the solder is welded and then intensely heated at about 150°C for 300 hours.
is a Ni concentrated diffusion mitigation layer. That is, Sn −p・
When bonded with b solder, almost no Ni-Sn intermetallic compound layer is formed, and instead, Zn-C
An N1 concentration diffusion reduction layer 4 is formed due to the Zn concentration of the U solid solution. Since the layer 4 has the effect of efficiently reducing or suppressing the diffusion bond between Ni dispersed in Cu and Sn in the solder, the movement of Ni in Cu is restricted and stable dispersion of Nl is achieved. The condition will be maintained for a long time.

したがって、Ni−Sn金属間化合物の生成がほとんど
起こらないため、界面における剥離現象が生じることは
ない。尚、Niの一部なFeで置換した場合及びNi0
代わりにFeを用いた場合にも、上記と同様にFeとS
nとの拡散結合が抑制される。
Therefore, since almost no Ni-Sn intermetallic compound is generated, no peeling phenomenon occurs at the interface. In addition, when Ni is partially replaced with Fe and Ni0
Even when Fe is used instead, Fe and S
Diffusion coupling with n is suppressed.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように、本発明にかかる合金は
Sn半田用電子部品に用いた場合に好適な結果が得られ
る。すなわち、上記の如< Ni (Fe) −Sn結
合に基づく界面での剥離現象の19・れ消に伴い、耐半
田性及び半田耐候性が向上している。また、Cu内にN
i又はFeを最大に添加することが可能となるため、電
子部品の強度をそれだけ増大できるという効果がある。
As is clear from the above description, suitable results can be obtained when the alloy according to the present invention is used in electronic components for Sn soldering. That is, with the elimination of the peeling phenomenon at the interface based on the Ni(Fe)-Sn bond described above, the solder resistance and solder weather resistance are improved. Also, N in Cu
Since it is possible to add the maximum amount of i or Fe, there is an effect that the strength of the electronic component can be increased accordingly.

更にCu内におけるNi及びFeの集中拡散が抑制され
るため、安定した分散状態が得られ、接合部分における
機械的強度の部分的−低下が回避される。また、これら
の元素添加によっても、なおCuに基づく高導電率及び
加工容易性等の緒特性を維持している。
Furthermore, since concentrated diffusion of Ni and Fe in Cu is suppressed, a stable dispersion state is obtained, and a partial decrease in mechanical strength at the bonded portion is avoided. Further, even with the addition of these elements, the characteristics based on Cu such as high electrical conductivity and ease of processing are maintained.

〔発明の実施例〕[Embodiments of the invention]

本発明のリードフレームを、以下の方法によって12種
製造した。
Twelve types of lead frames of the present invention were manufactured by the following method.

表に示した各元素をそれぞれボールミル内に装填した後
、Arガスを充填して撹拌混合した。イ11られた複合
体な脱気した容器に装填し、これを加熱溶融後、熱押出
してインゴットを成形した。次に、このインゴットを熱
間及び冷間圧延した後、切断加工してコイルを得た。し
かる後、このコイルをプレス加工してリードフレームを
製造した。尚、表中の試料番号1及び2のリードフレー
ムは、Nl又はFeの添加量が0.05〜5重景%重量
囲、snが0.05〜4重量%の範囲、znが0.1〜
3重社%の範囲にある合金を用−たものであり、試料番
号3〜10のリードフレームは、上記条件に加えて、N
i、 Fe及び Snに対するZnの重量化が、Zn≧
上(Ni 、 Fe 、 Sn )0 の関係にある合金を用いたものである。
After each element shown in the table was loaded into a ball mill, Ar gas was filled and mixed by stirring. The resulting composite was loaded into a deaerated container, heated and melted, and then hot extruded to form an ingot. Next, this ingot was hot-rolled and cold-rolled, and then cut to obtain a coil. Thereafter, this coil was pressed to produce a lead frame. In addition, the lead frames of sample numbers 1 and 2 in the table have an added amount of Nl or Fe in a range of 0.05 to 5% by weight, an sn of 0.05 to 4% by weight, and a zn of 0.1. ~
The lead frames of sample numbers 3 to 10 are made of alloys in the range of Miesha%, and in addition to the above conditions,
The weighting of Zn with respect to i, Fe and Sn is Zn≧
An alloy having the above relationship (Ni, Fe, Sn)0 is used.

一方、比較のために、表に示した本発明以外の合金組成
からなるリードフレームを5種gbした。
On the other hand, for comparison, five types of lead frames made of alloy compositions other than those of the present invention shown in the table were prepared.

以上のリードフレーム試料にSn −Pb半田を溶着し
、表に示した試験を行った。各試験項目における判定基
準はほぼ次のとおりである。
Sn--Pb solder was welded to the above lead frame sample, and the tests shown in the table were conducted. The criteria for each test item are approximately as follows.

半田付性・・・・・・目視観、察により判定した。Solderability: Determined by visual observation and observation.

〇−優 △−良 ×−不良 半[]」耐候性・・・・・・約150℃で300時間強
性加熱した後、90°の繰返し曲げを 3回行い、剥離の有無で判定し た○ 〇−剥離せず △−2回で剥離 ×−1回で剥離 機械的強度・・・・・・マイクロビッカース硬度Ntに
より判定した。
〇-Excellent △-Good ×-Poor[]" Weather resistance: After intense heating at approximately 150°C for 300 hours, repeated bending at 90° was performed three times, and judgment was made based on the presence or absence of peeling.○ 〇 - No peeling △ - Peeling after 2 times x - Peeling once after 1 time Mechanical strength: Determined by micro Vickers hardness Nt.

○−130MI(V以上 X −130MHv以下導電
性・・・・・・純銅からなるリードフレームの導電率を
100とした場合に、何%の導 電率を有しているかにより判定した0 0−30%以上 △−30〜20% ×−20%以下 Ni集中拡散軽減層・・・・・・約150℃で300時
間強性加熱した後、該層が生成してい るか否かをXMA法により判定した0 有・・・生成 無・・・生成せず 以上の試験結果について、全てに亘り優れているものを
◎、はぼ全てに亘り優れているものを○、不良とされる
試験項目があるものを×として評価した。
○-130 MI (V or more X -130 MHv or less Conductivity...Judged by what percentage of conductivity it has when the conductivity of a lead frame made of pure copper is taken as 100 0-30 % or more △ -30 to 20% × -20% or less Ni concentrated diffusion reducing layer... After intense heating at about 150°C for 300 hours, determine whether the layer is formed or not by the XMA method. 0 Yes... Generated No... Not generated Regarding the above test results, ◎ indicates excellent in all aspects, ○ indicates excellent in almost all, and there are test items that are considered poor. Items were evaluated as ×.

試験結果を表に一括して記載した。The test results are summarized in the table.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のリードフレームとPb −Sn半田との
接合部について、経時変化後の組織状態を示した拡大断
面図、第2図はリードフレームの合金組成としてNi又
はFeを増量させた場合の接合部の組織状態を示した拡
大断面図、第3図は本発明のリードフレームと3n −
pb半田との接合部について、経時変化後の組織状態を
示した拡大断面図である。 1・・・リードフレーム、2・・・811− Pb半田
、a・・・e −Cu、 Sn層、b −1−Cu、、
 Sn、層、c ・” P b hl、3−−− Ni
 (Fe) −8n金属間化合物層、4 ・Ni (F
e)集中拡散軽減層。
Figure 1 is an enlarged cross-sectional view showing the structure of a joint between a conventional lead frame and Pb-Sn solder after changes over time, and Figure 2 is an enlarged cross-sectional view of the joint between a conventional lead frame and Pb-Sn solder, and Figure 2 shows a case where Ni or Fe is increased in the alloy composition of the lead frame. FIG. 3 is an enlarged sectional view showing the structure of the joint of the lead frame of the present invention and 3n-
FIG. 2 is an enlarged cross-sectional view showing the state of the structure of a joint with PB solder after changes over time. 1...Lead frame, 2...811-Pb solder, a...e-Cu, Sn layer, b-1-Cu,,
Sn, layer, c・”P b hl, 3---Ni
(Fe) -8n intermetallic compound layer, 4 ・Ni (F
e) Concentrated diffusion mitigation layer.

Claims (2)

【特許請求の範囲】[Claims] (1)主成分がCuで、第1添加成分としてNi又はF
eのいずれか1種以上をそれぞれ0.05〜5重量%、
第2添加成分として3nを0.05〜4重量%、第3添
加成分としてznを0.1 〜3重量%有する合金から
形成されていることを特徴とする電子部品。
(1) The main component is Cu, and the first additional component is Ni or F.
0.05 to 5% by weight of any one or more of e,
An electronic component characterized in that it is formed from an alloy containing 0.05 to 4% by weight of 3N as a second additive component and 0.1 to 3% by weight of ZN as a third additive component.
(2) Ni、Fe及びSnに対するZnの重量比がz
n≧±(Ni 、Fe 、Sn ) 0 の関係にある1−!許請求の範囲第1項記載の電子部品
(2) The weight ratio of Zn to Ni, Fe, and Sn is z
1-! in the relationship n≧±(Ni, Fe, Sn) 0! An electronic component according to claim 1.
JP11281383A 1983-06-24 1983-06-24 Electronic parts Granted JPS605550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11281383A JPS605550A (en) 1983-06-24 1983-06-24 Electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11281383A JPS605550A (en) 1983-06-24 1983-06-24 Electronic parts

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP31226487A Division JPS63158859A (en) 1987-12-11 1987-12-11 Electronic part

Publications (2)

Publication Number Publication Date
JPS605550A true JPS605550A (en) 1985-01-12
JPS6349380B2 JPS6349380B2 (en) 1988-10-04

Family

ID=14596170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11281383A Granted JPS605550A (en) 1983-06-24 1983-06-24 Electronic parts

Country Status (1)

Country Link
JP (1) JPS605550A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6299429A (en) * 1985-10-25 1987-05-08 Kobe Steel Ltd Material for lead frame having superior suitability to shearing work
JPS63158859A (en) * 1987-12-11 1988-07-01 Toshiba Corp Electronic part
JP2013258355A (en) * 2012-06-14 2013-12-26 Denso Corp Electronic device
JP2014007227A (en) * 2012-06-22 2014-01-16 Murata Mfg Co Ltd Electronic component module and manufacturing method therefor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654376A (en) * 1979-10-11 1981-05-14 Hitachi Medical Corp Scanning type scintillation camera
JPS575836A (en) * 1980-06-16 1982-01-12 Nippon Mining Co Ltd High strength copper alloy having excellent heat resistance for use as conductive material
JPS5768061A (en) * 1980-10-15 1982-04-26 Furukawa Electric Co Ltd:The Lead material for semiconductor device
JPS5793555A (en) * 1980-12-02 1982-06-10 Tamagawa Kikai Kinzoku Kk Lead material for semiconductor
JPS59153853A (en) * 1983-02-21 1984-09-01 Hitachi Metals Ltd Matrial for lead frame

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654376A (en) * 1979-10-11 1981-05-14 Hitachi Medical Corp Scanning type scintillation camera
JPS575836A (en) * 1980-06-16 1982-01-12 Nippon Mining Co Ltd High strength copper alloy having excellent heat resistance for use as conductive material
JPS5768061A (en) * 1980-10-15 1982-04-26 Furukawa Electric Co Ltd:The Lead material for semiconductor device
JPS5793555A (en) * 1980-12-02 1982-06-10 Tamagawa Kikai Kinzoku Kk Lead material for semiconductor
JPS59153853A (en) * 1983-02-21 1984-09-01 Hitachi Metals Ltd Matrial for lead frame

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6299429A (en) * 1985-10-25 1987-05-08 Kobe Steel Ltd Material for lead frame having superior suitability to shearing work
JPS63158859A (en) * 1987-12-11 1988-07-01 Toshiba Corp Electronic part
JPH0366813B2 (en) * 1987-12-11 1991-10-18 Tokyo Shibaura Electric Co
JP2013258355A (en) * 2012-06-14 2013-12-26 Denso Corp Electronic device
JP2014007227A (en) * 2012-06-22 2014-01-16 Murata Mfg Co Ltd Electronic component module and manufacturing method therefor

Also Published As

Publication number Publication date
JPS6349380B2 (en) 1988-10-04

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