JPH0353375B2 - - Google Patents

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Publication number
JPH0353375B2
JPH0353375B2 JP59001742A JP174284A JPH0353375B2 JP H0353375 B2 JPH0353375 B2 JP H0353375B2 JP 59001742 A JP59001742 A JP 59001742A JP 174284 A JP174284 A JP 174284A JP H0353375 B2 JPH0353375 B2 JP H0353375B2
Authority
JP
Japan
Prior art keywords
heat resistance
alloy
strength
plating adhesion
marked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59001742A
Other languages
Japanese (ja)
Other versions
JPS60145341A (en
Inventor
Shigeo Shinozaki
Kiichi Akasaka
Hirohisa Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP174284A priority Critical patent/JPS60145341A/en
Publication of JPS60145341A publication Critical patent/JPS60145341A/en
Publication of JPH0353375B2 publication Critical patent/JPH0353375B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、半導体を要素とするIC、LSI等の機
器のリードフレーム用材料に関するものである。 これらの機器は、何れも半導体の導体ペレツ
ト、リード、ボンデイングワイヤーによつて構成
されたものをハーメチツクシールあるいはプラス
チツクシール等により封止したものであり、種々
の型式のものが使用されている。 従来、これら機器のリードフレーム材としては
コバール、Fe−42%Ni合金などの鉄系材料、ま
たリン青銅やアロイ194(Cu−Fe−Zn−P)、195
(Cu−Fe−Co−Sn−P)などの銅合金が使用さ
れていた。しかしながら、電子工業技術の進歩に
より近年では材料コストの高いコバーールやFe
−42%Ni合金から銅合金へと転換されると同時
に、銅合金の中でも高強度のもので、しかも高導
電性を有する材料が求められている。 銅合金リードフレーム材料として、必要な特性
は次の5項目である。 (1) 熱及び電気伝導性にすぐれていること。 (2) 耐熱性が良いこと。 (3) 曲げ加工性にすぐれていること。 (4) 強度が大きいこと。 (5) メツキ密着性(半田付け性)が良いこと。 本発明はかかる状況に鑑み銅合金であつても充
分にコバール、42合金に匹敵する強度をもち、耐
熱性、曲げ加工性メツキ密着性の良い材料の開発
に力をそそいだ結果、見出した合金であり、
Sn0.22〜1.0wt%、Cr0.05〜1.2wt%、P0.01〜
0.3wt%を含み残部Cuからなることを特徴とす
る。 このように本発明は、Cuを基材としてこれに
Sn、Cr、Pを添加するものであり、Snを添加す
ることにより、強度及び耐熱性を向上させるとと
もに、リードフレーム材に要求される熱、電気伝
導性の大巾な劣化を抑え、更にメツキ密着性、半
田付け性を劣化させない作用をもたせたもので
Snを0.22〜1.0wt%に限定した理由は、Snが
0.22wt%未満では熱、電気的特性及びメツキ密着
性は良好であるが強度的な向上が少なく、リード
フレーム材として、実用的ではない。Snが1.0wt
%をこえると強度は増加するが、熱、電気的特性
及びメツキ密着性、の劣化が大きくなり実際的で
なくなる。 次にCrはCuマトリツクス中に分散、析出して
合金の熱的、電気的特性を劣化させることなく耐
熱性を向上させる。Crを0.05〜1.2wt%に限定し
た理由は、0.05wt%未満では耐熱性向上の効果が
少なく0.05〜1.2wt%までは増加傾向にあるが、
1.2wt%を越えると耐熱性向上の効果は飽和して
しまいそれ以上添加量を増加させても、耐熱性は
もはや向上しないばかりでなくCrはCuマトリツ
クス中に析出して異相を作り、Cu基の部分に比
較してメツキ密着性が悪くなり半田付け性を劣化
させ、実用的ではなくなるからである。 又、PはCrと金属間化合物Cr−Pを生成しCr
と共存することにより強度、耐熱性をさらに向上
させる。Pを0.01〜0.3wt%に限定した理由は、
0.01wt%未満ではCrとの金属間化合物の生成が
少なく強度、耐熱性向上が認められず、0.3wt%
を越えると熱、電気的特性の劣化が大きく実用的
でなくなる。 以下に本発明の実施例について説明する。 黒鉛ルツボを使用して銅を溶解し、その湯面を
木炭粉末にて覆い、充分に溶解した後P、Cr、
Snの順で元素を添加、よく撹拌をした後、第1
表に示す成分で巾150mm、長さ200mm、厚さ25mmの
鋳塊を得た。次に鋳塊表面を一面あたり2.5mm面
削した後、熱間圧延を行なつて厚さ8mm、巾150
mmの板を作つた。しかる後焼鈍と冷間圧延をくり
返して、最終厚さ0.25mm厚さの板材を得た。尚中
間焼鈍後の仕上圧延率40%である。 かくして得た供試板浄について導電率、耐熱
性、引張り強さ、メツキ性、曲げ加工性を測定し
た。 その結果を第1表に示した。また比較のため従
来品であるコバール、アロイ194についても同様
な測定を行い第1表に併記した。 曲げ加工性はこの板材より巾10mm長さ50mmの短
冊試験片を切り出しその中央部で180゜密着曲げを
行い、該曲げ部の表面状態を観察し、割れ、しわ
の発生がなく平滑なものを曲げ加工性が良いとい
うことで〇印、割れが明らかに発生しているもの
を曲げ加工性が不良ということで×印、その中間
で割れ、しわがわずかに発生しているものを△印
で表わした。 導電率及び引張り強さの測定はJIS−H0505、
JIS−Z2241に基いて行なつた。 また耐熱性は前記圧延材よりJIS−Z2201に規
定する引張り試験片を切り出し、これをアルゴン
ガス雰囲気中で400℃5分間加熱焼鈍した後引張
り試験を行ない、その引張り強さを焼鈍前と比較
し低下率が30%以下のものを耐熱性良好として〇
印、30%を越えるものを耐熱性不良として×印で
表わした。 メツキ密着性は圧延材より30×30mmのサンプル
を切り出し、表面脱脂→酸洗(サンプル表面0.3μ
溶解)Agメツキ(5μ)→加熱(温度450℃5分間
保持)の処理後表面観察を行なつて表面のフクレ
の有無を調べ、フクレ2個以下を〇印、3〜6個
を△印、7個以上を×印で表わした。
The present invention relates to lead frame materials for devices such as ICs and LSIs that use semiconductors as elements. All of these devices are composed of semiconductor conductor pellets, leads, and bonding wires sealed with hermetic seals or plastic seals, and various types are used. . Conventionally, lead frame materials for these devices include ferrous materials such as Kovar and Fe-42%Ni alloy, as well as phosphor bronze and alloys 194 (Cu-Fe-Zn-P) and 195.
Copper alloys such as (Cu-Fe-Co-Sn-P) were used. However, due to advances in electronic technology, in recent years, materials such as Kovar and Fe, which have high material costs, have been
At the same time as the -42% Ni alloy is being converted to a copper alloy, there is a need for a material that is both high strength and highly conductive among copper alloys. The following five properties are required for a copper alloy lead frame material. (1) It must have excellent thermal and electrical conductivity. (2) Good heat resistance. (3) Excellent bending workability. (4) High strength. (5) Good plating adhesion (solderability). In view of this situation, the present invention has focused on developing a material that has sufficient strength comparable to Kovar and 42 alloys even though it is a copper alloy, and has good heat resistance, bending workability, and plating adhesion, and as a result, we have discovered an alloy. and
Sn0.22~1.0wt%, Cr0.05~1.2wt%, P0.01~
It is characterized by containing 0.3wt% and the balance being Cu. In this way, the present invention uses Cu as a base material.
Sn, Cr, and P are added. By adding Sn, the strength and heat resistance are improved, and the large deterioration of heat and electrical conductivity required for lead frame materials is suppressed, and the plating is also improved. It has the effect of not deteriorating adhesion and solderability.
The reason for limiting Sn to 0.22 to 1.0wt% is that Sn
If it is less than 0.22 wt%, the heat, electrical properties and plating adhesion are good, but there is little improvement in strength and it is not practical as a lead frame material. Sn is 1.0wt
%, the strength increases, but the thermal properties, electrical properties, and plating adhesion deteriorate significantly, making it impractical. Next, Cr is dispersed and precipitated in the Cu matrix, improving heat resistance without degrading the thermal and electrical properties of the alloy. The reason why Cr is limited to 0.05 to 1.2 wt% is that below 0.05 wt%, the effect of improving heat resistance is small, and when it reaches 0.05 to 1.2 wt%, it tends to increase.
When the amount exceeds 1.2wt%, the effect of improving heat resistance is saturated, and even if the amount added is increased further, not only will the heat resistance no longer improve, but Cr will precipitate in the Cu matrix, creating a foreign phase, and the Cu base This is because the plating adhesion is poorer than that of the part shown in FIG. In addition, P forms an intermetallic compound Cr-P with Cr.
Coexistence with other materials further improves strength and heat resistance. The reason for limiting P to 0.01-0.3wt% is
If it is less than 0.01wt%, the formation of intermetallic compounds with Cr is small and no improvement in strength or heat resistance is observed, and 0.3wt%
Exceeding this value will result in significant deterioration of thermal and electrical characteristics, making it impractical. Examples of the present invention will be described below. Copper is melted using a graphite crucible, the surface of the hot water is covered with charcoal powder, and after sufficient melting, P, Cr,
Add the elements in the order of Sn, stir well, and then
An ingot with a width of 150 mm, a length of 200 mm, and a thickness of 25 mm was obtained using the ingredients shown in the table. Next, the surface of the ingot was milled 2.5 mm per side, and then hot rolled to a thickness of 8 mm and a width of 150 mm.
I made a mm board. Thereafter, annealing and cold rolling were repeated to obtain a plate with a final thickness of 0.25 mm. The finish rolling rate after intermediate annealing is 40%. The electrical conductivity, heat resistance, tensile strength, plating property, and bending workability of the test plate thus obtained were measured. The results are shown in Table 1. For comparison, similar measurements were also made on conventional products Kovar and Alloy 194, which are also listed in Table 1. For bending workability, cut a strip test piece with a width of 10 mm and a length of 50 mm from this plate material, bend it closely at the center by 180 degrees, observe the surface condition of the bent part, and check whether it is smooth and has no cracks or wrinkles. Good bending workability is marked with ○, those with obvious cracks are marked with poor bending workability, and those with cracks or wrinkles in the middle are marked with △. expressed. Measurement of electrical conductivity and tensile strength is based on JIS-H0505,
This was done based on JIS-Z2241. In addition, heat resistance was determined by cutting out a tensile test piece specified in JIS-Z2201 from the rolled material, annealing it at 400°C for 5 minutes in an argon gas atmosphere, then conducting a tensile test, and comparing the tensile strength with that before annealing. Those with a reduction rate of 30% or less were marked as having good heat resistance, and those with a reduction rate of 30% or less were marked with an x, indicating poor heat resistance. To check the plating adhesion, cut out a 30 x 30 mm sample from the rolled material, degrease the surface and pickle (sample surface 0.3μ
After the treatment of Ag plating (5μ) → heating (temperature maintained at 450℃ for 5 minutes), the surface was observed to check for any blisters on the surface. 2 or less blisters are marked with ○, 3 to 6 are marked with △, Seven or more items are marked with an x.

【表】【table】

【表】 第1表から明らかな如く本発明合金は導電率72
〜88%IACS引張り強さ42〜52Kgf/mm2の特性を
示しメツキ密着性曲げ加工性、耐熱性が良好であ
り、従来合金である鉄系、コバールよりはるかに
優れた導電性(熱電導性)を有しメツキ密着性も
良く、従来使用されている銅合金のアロイ194よ
り導電性が良好であり、耐熱性メツキ密着性も優
れていることが判る。 これに対し、本発明合金の組成範囲よりSn含
有量、Cr含有量、P含有量のいずれか1種又は
2種が少ない比較合金No.10、12、14、16ではいず
れも耐熱性は改善されず、本発明合金の組成範囲
より、Sn含有量、Cr含有量のいずれか1種又は
2種が多いNo.11、13、15では引張り強度、耐熱性
は充分であるが、導電性の低下が著しくメツキ密
着性も悪いことがわかる。 以上詳述したように、本発明合金はPを含有す
ることにより、Cr−Pが共存し、より優れた強
度、耐熱性と充分な導電性を併せ持ち、かつ曲げ
加工性メツキ密着性も良好な銅合金であり、半導
体機器のリード材として顕著な効果を奏するもの
である。
[Table] As is clear from Table 1, the alloy of the present invention has a conductivity of 72
It exhibits properties of ~88% IACS tensile strength of 42 to 52 Kgf/ mm2 , has good plating adhesion, bending workability, and heat resistance, and has far superior electrical conductivity (thermal conductivity) than conventional alloys such as iron and Kovar. ), it has good plating adhesion, has better conductivity than the conventionally used copper alloy Alloy 194, and has excellent heat-resistant plating adhesion. On the other hand, comparative alloys No. 10, 12, 14, and 16, which have Sn content, Cr content, and P content that are lower than the composition range of the present alloy, all have improved heat resistance. However, Nos. 11, 13, and 15, which have a higher Sn content or Cr content than the composition range of the present alloy, have sufficient tensile strength and heat resistance, but have poor conductivity. It can be seen that the plating adhesion was significantly reduced. As detailed above, the alloy of the present invention contains P, so that Cr-P coexists, and it has superior strength, heat resistance, and sufficient electrical conductivity, and also has good bending workability and plating adhesion. It is a copper alloy and has remarkable effects as a lead material for semiconductor devices.

Claims (1)

【特許請求の範囲】[Claims] 1 Sn0.22〜1.0wt%、Cr0.05〜1.2wt%、P0.01
〜0.3wt%含み残部Cuからなることを特徴とする
半導体機器のリード材用銅合金。
1 Sn0.22~1.0wt%, Cr0.05~1.2wt%, P0.01
A copper alloy for lead material of semiconductor devices, characterized by containing ~0.3wt% and the balance being Cu.
JP174284A 1984-01-09 1984-01-09 Copper alloy for material of lead of semiconductor apparatus Granted JPS60145341A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP174284A JPS60145341A (en) 1984-01-09 1984-01-09 Copper alloy for material of lead of semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP174284A JPS60145341A (en) 1984-01-09 1984-01-09 Copper alloy for material of lead of semiconductor apparatus

Publications (2)

Publication Number Publication Date
JPS60145341A JPS60145341A (en) 1985-07-31
JPH0353375B2 true JPH0353375B2 (en) 1991-08-14

Family

ID=11510014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP174284A Granted JPS60145341A (en) 1984-01-09 1984-01-09 Copper alloy for material of lead of semiconductor apparatus

Country Status (1)

Country Link
JP (1) JPS60145341A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61264144A (en) * 1985-05-20 1986-11-22 Nippon Mining Co Ltd High-strength and high conductivity copper alloy excelling in thermal peeling resistance of solder
JPH01312047A (en) * 1988-06-13 1989-12-15 Yazaki Corp High tensile and high-conductivity copper alloy having excellent continuous castability

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123746A (en) * 1982-01-18 1983-07-23 Furukawa Electric Co Ltd:The Copper alloy for lead material of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123746A (en) * 1982-01-18 1983-07-23 Furukawa Electric Co Ltd:The Copper alloy for lead material of semiconductor device

Also Published As

Publication number Publication date
JPS60145341A (en) 1985-07-31

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