JPS6332273B2 - - Google Patents
Info
- Publication number
- JPS6332273B2 JPS6332273B2 JP58082932A JP8293283A JPS6332273B2 JP S6332273 B2 JPS6332273 B2 JP S6332273B2 JP 58082932 A JP58082932 A JP 58082932A JP 8293283 A JP8293283 A JP 8293283A JP S6332273 B2 JPS6332273 B2 JP S6332273B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- semiconductor
- region
- layer
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000005669 field effect Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 238000005468 ion implantation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8293283A JPS59207669A (ja) | 1983-05-10 | 1983-05-10 | 電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8293283A JPS59207669A (ja) | 1983-05-10 | 1983-05-10 | 電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59207669A JPS59207669A (ja) | 1984-11-24 |
| JPS6332273B2 true JPS6332273B2 (US07696358-20100413-C00002.png) | 1988-06-29 |
Family
ID=13788000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8293283A Granted JPS59207669A (ja) | 1983-05-10 | 1983-05-10 | 電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59207669A (US07696358-20100413-C00002.png) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62296566A (ja) * | 1986-06-17 | 1987-12-23 | Matsushita Electronics Corp | 電界効果トランジスタおよびその製造方法 |
| JPH081910B2 (ja) * | 1987-05-13 | 1996-01-10 | 日本電気株式会社 | 電界効果型半導体装置及びその製造方法 |
| JPH081911B2 (ja) * | 1987-06-24 | 1996-01-10 | 日本電気株式会社 | 電界効果型半導体装置及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768077A (en) * | 1980-10-15 | 1982-04-26 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of schottky gate type field effect transistor |
-
1983
- 1983-05-10 JP JP8293283A patent/JPS59207669A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768077A (en) * | 1980-10-15 | 1982-04-26 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of schottky gate type field effect transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59207669A (ja) | 1984-11-24 |
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