JPS6331952B2 - - Google Patents

Info

Publication number
JPS6331952B2
JPS6331952B2 JP57217569A JP21756982A JPS6331952B2 JP S6331952 B2 JPS6331952 B2 JP S6331952B2 JP 57217569 A JP57217569 A JP 57217569A JP 21756982 A JP21756982 A JP 21756982A JP S6331952 B2 JPS6331952 B2 JP S6331952B2
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
laser
trimming
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57217569A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59107579A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57217569A priority Critical patent/JPS59107579A/ja
Publication of JPS59107579A publication Critical patent/JPS59107579A/ja
Publication of JPS6331952B2 publication Critical patent/JPS6331952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57217569A 1982-12-11 1982-12-11 光電変換装置の作製方法 Granted JPS59107579A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57217569A JPS59107579A (ja) 1982-12-11 1982-12-11 光電変換装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57217569A JPS59107579A (ja) 1982-12-11 1982-12-11 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JPS59107579A JPS59107579A (ja) 1984-06-21
JPS6331952B2 true JPS6331952B2 (enExample) 1988-06-27

Family

ID=16706317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57217569A Granted JPS59107579A (ja) 1982-12-11 1982-12-11 光電変換装置の作製方法

Country Status (1)

Country Link
JP (1) JPS59107579A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142971A (ja) * 1984-08-06 1986-03-01 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH0650781B2 (ja) * 1984-06-29 1994-06-29 三洋電機株式会社 半導体装置の製造方法
JPS6196774A (ja) * 1984-10-17 1986-05-15 Fuji Electric Co Ltd 薄膜光電変換素子製造装置
JPS6258685A (ja) * 1985-09-09 1987-03-14 Fuji Electric Co Ltd 非晶質半導体太陽電池の製造方法
JPS6265480A (ja) * 1985-09-18 1987-03-24 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池装置
US6559411B2 (en) * 2001-08-10 2003-05-06 First Solar, Llc Method and apparatus for laser scribing glass sheet substrate coatings
US8207055B2 (en) * 2005-06-30 2012-06-26 Koninklijke Philips Electronics N.V. Method for generating an electrode layer pattern in an organic functional device
JP5202026B2 (ja) * 2008-02-25 2013-06-05 三菱電機株式会社 レーザスクライブ装置
JP7546213B2 (ja) * 2020-06-23 2024-09-06 パナソニックＩｐマネジメント株式会社 太陽電池、及び太陽電池の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2503457B1 (fr) * 1981-03-31 1987-01-23 Rca Corp Systeme de cellules solaires connectees en serie sur un substrat unique

Also Published As

Publication number Publication date
JPS59107579A (ja) 1984-06-21

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