JPS59107579A - 光電変換装置の作製方法 - Google Patents

光電変換装置の作製方法

Info

Publication number
JPS59107579A
JPS59107579A JP57217569A JP21756982A JPS59107579A JP S59107579 A JPS59107579 A JP S59107579A JP 57217569 A JP57217569 A JP 57217569A JP 21756982 A JP21756982 A JP 21756982A JP S59107579 A JPS59107579 A JP S59107579A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
photoelectric conversion
conversion device
trimming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57217569A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6331952B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57217569A priority Critical patent/JPS59107579A/ja
Publication of JPS59107579A publication Critical patent/JPS59107579A/ja
Publication of JPS6331952B2 publication Critical patent/JPS6331952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57217569A 1982-12-11 1982-12-11 光電変換装置の作製方法 Granted JPS59107579A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57217569A JPS59107579A (ja) 1982-12-11 1982-12-11 光電変換装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57217569A JPS59107579A (ja) 1982-12-11 1982-12-11 光電変換装置の作製方法

Publications (2)

Publication Number Publication Date
JPS59107579A true JPS59107579A (ja) 1984-06-21
JPS6331952B2 JPS6331952B2 (enExample) 1988-06-27

Family

ID=16706317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57217569A Granted JPS59107579A (ja) 1982-12-11 1982-12-11 光電変換装置の作製方法

Country Status (1)

Country Link
JP (1) JPS59107579A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114727A (ja) * 1984-06-29 1986-01-22 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS6142971A (ja) * 1984-08-06 1986-03-01 Sanyo Electric Co Ltd 半導体装置の製造方法
US4700463A (en) * 1985-09-09 1987-10-20 Fuji Electric Company Ltd. Non-crystalline semiconductor solar battery and method of manufacture thereof
US4728615A (en) * 1984-10-17 1988-03-01 Fuji Electric Company Ltd. Method for producing thin-film photoelectric transducer
US4734379A (en) * 1985-09-18 1988-03-29 Fuji Electric Corporate Research And Development Ltd. Method of manufacture of solar battery
JP2009500788A (ja) * 2005-06-30 2009-01-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機機能装置に電極層パターンを形成する方法
JP2009195968A (ja) * 2008-02-25 2009-09-03 Mitsubishi Electric Corp レーザスクライブ装置
JP2010012519A (ja) * 2001-08-10 2010-01-21 First Solar Inc ガラスシート基板コーティングをレーザスクライビングするための方法及び装置
JP2022003661A (ja) * 2020-06-23 2022-01-11 パナソニックIpマネジメント株式会社 太陽電池、及び太陽電池の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176778A (en) * 1981-03-31 1982-10-30 Rca Corp Solar battery array

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57176778A (en) * 1981-03-31 1982-10-30 Rca Corp Solar battery array

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6114727A (ja) * 1984-06-29 1986-01-22 Sanyo Electric Co Ltd 半導体装置の製造方法
JPS6142971A (ja) * 1984-08-06 1986-03-01 Sanyo Electric Co Ltd 半導体装置の製造方法
US4728615A (en) * 1984-10-17 1988-03-01 Fuji Electric Company Ltd. Method for producing thin-film photoelectric transducer
US4700463A (en) * 1985-09-09 1987-10-20 Fuji Electric Company Ltd. Non-crystalline semiconductor solar battery and method of manufacture thereof
US4734379A (en) * 1985-09-18 1988-03-29 Fuji Electric Corporate Research And Development Ltd. Method of manufacture of solar battery
JP2010012519A (ja) * 2001-08-10 2010-01-21 First Solar Inc ガラスシート基板コーティングをレーザスクライビングするための方法及び装置
JP2009500788A (ja) * 2005-06-30 2009-01-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機機能装置に電極層パターンを形成する方法
JP2009195968A (ja) * 2008-02-25 2009-09-03 Mitsubishi Electric Corp レーザスクライブ装置
JP2022003661A (ja) * 2020-06-23 2022-01-11 パナソニックIpマネジメント株式会社 太陽電池、及び太陽電池の製造方法

Also Published As

Publication number Publication date
JPS6331952B2 (enExample) 1988-06-27

Similar Documents

Publication Publication Date Title
US6455347B1 (en) Method of fabricating thin-film photovoltaic module
US4965655A (en) Interconnected semiconductor devices
US4892592A (en) Thin film semiconductor solar cell array and method of making
US4873201A (en) Method for fabricating an interconnected array of semiconductor devices
JP3129728B2 (ja) 薄膜半導体装置
US4783421A (en) Method for manufacturing electrical contacts for a thin-film semiconductor device
CN101889351B (zh) 集成型薄膜光电转换装置及其制造方法
US20120164782A1 (en) Method and device for producing a photovoltaic thin-film module
US4854974A (en) Electrical contacts for a thin-film semiconductor device
KR20100015811A (ko) 초경량 반도체 장치의 레이저 스크라이빙을 위한 방법 및 장치
JPS59107579A (ja) 光電変換装置の作製方法
JPH0851229A (ja) 集積型太陽電池およびその製造方法
US20080289683A1 (en) Thin-Film Solar Cell Interconnection
JPS6154681A (ja) 薄膜光起電力素子の製造方法
JP3393842B2 (ja) 光電変換装置の作製方法
JPS6184074A (ja) 半導体装置
US20100304526A1 (en) Method of making a photovoltaic module
JP2001168355A (ja) 薄膜光電変換モジュールの欠陥修復方法及び薄膜光電変換モジュールの製造方法
JPH0476227B2 (enExample)
JPS5986269A (ja) 光電変換装置の作製方法
KR101169455B1 (ko) 태양전지의 제조방법
JPS6258685A (ja) 非晶質半導体太陽電池の製造方法
JPS5994884A (ja) 光電変換装置の作製方法
JPH0243776A (ja) 薄膜太陽電池の製造方法
JP2001085720A (ja) 薄膜光電変換モジュール及びその製造方法