JPS59107579A - Manufacture of photoelectric conversion device - Google Patents

Abstract

PURPOSE:To improve yield on manufacture and reliability by irradiating a visible light when there is a defective position in the photoelectric conversion device, detecting the position, irradiating trimming pulse beams of coaxial beams, and instantaneously evaporating and erasing an electrode and a semiconductor at the defective position. CONSTITUTION:A light-transmitting first electrode 3 is attached onto a light- transmitting glass substrate 2, a hydrogen added nonsingular crystal semiconductor layer 4 with a P-N or P-I-N or hetero-junction is formed onto the electrode 3, and the layer 4 is coated with an Al second electrode 5. The visible radiation, such as He-Ne Ar or the like is irradiated on the exposed surface side of the substrate 2, and the defective position of the photoelectric conversion device is inspected. When the defective position 14 where the electrodes 3 and 4 are in contact is discovered at that time, a YAG laser 12, a spot diameter thereof is made 50mumphi, is irradiated similarly from the exposed surface side of the substrate 2, and the layer 4 and the electrode 5 at the defective position 14 are burnt off instantaneously and evaporated. The whole surface is coated with a passivation film made of Si3N4, etc. while burying the defective position.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a photoelectric conversion device having at least one K PIN junction, PN junction, or heterojunction on a light-transmitting substrate, in which a contact between first and second electrodes sandwiching this semiconductor junction is provided. By irradiating the light-transmitting substrate side with a pulsed light and removing the points or areas where short circuits or leaks occur by laser trimming, white clay can be used efficiently as semiconductor devices, especially photoelectric conversion devices (PVA). The purpose is to measure.

The present invention relates to a first electrode formed on a light-transmitting substrate, a semiconductor having at least one PN or P-N junction, or a heterojunction, and a second electrode that is irradiated with laser light from the side of a light-stacked substrate. The purpose of this method is to electrically isolate the divided cellular photoelectric conversion device, as well as to prevent the upper and lower first and second electrodes from short-circuiting or leaking from each other after scribing. .

This invention irradiates visible light, for example, He-Ne laser light, to detect defective locations (hereinafter simply referred to as defective locations).
Using the fact that this defective area has a lower electrical output than other normal areas,
The electrode and the semiconductor underneath are removed by irradiating pulsed light to remove short-circuits or leakage points between the pair of electrodes. In other words, the microcomputer memorizes the defective parts with low output,
Furthermore, a trimming laser (for example, a YAG laser) K signal is applied, and a circular pulsed light (wavelength of about 1μ) of 1 to 100μ, generally 30 to 60μ, is irradiated onto the glass surface side of the transparent substrate. By vaporizing and removing the second electrode and the semiconductor below it, the purpose is to eliminate the presence of short circuits or leaks between the upper and lower second and first electric meters.

Conventional photoelectric converter 4 (ζ・L device has an area for intrinsic efficiency of 0)
．． Partly because it was 1 to 5%/CmL, there was not much progress in the manufacturing yield.

However, the inventor of the present invention found that one nocinel of this pva was 20X
If the area is enlarged to 40 cm mL or 20 x 60 cm, and there are 4 or more small pinholes and 1 or more large pinholes in this area, the PV
In addition, the short circuit current has a predetermined value due to leakage, and the KFF (fill factor) has changed from the general 0.6 to 0.73 to 0.2 to 0.4. I noticed something. As a result of examining such PVC, it was found that the upper and lower electrodes were electrically short-circuited to each other due to the adhesion of dirt or foreign matter such as dust and protrusions. If there is a defective part like this, the characteristics as described above will be poor, and the PvC panel will not be able to obtain the specified characteristics of 10, and furthermore, the 20 cm In the above panels,
Its manufacturing yield is only 20-40%, which does not meet the requirements of a manufacturing line that must have 90 or more parts. As a result, the cost of the product increased and the reliability decreased. In order to eliminate these drawbacks, the present invention detects the defect by irradiating it with visible light and then irradiating it with coaxial trimming pulse light to detect the defect. By performing laser trimming, which instantaneously vaporizes and erases the electrode and semiconductor at a location, or the upper and lower electrodes, and the semiconductor in between, the aim is to improve manufacturing yield and reliability. .

In order to prevent the adhesion, the purpose is to eject all the defective parts from the transparent electrode side, ie, the first electrode side, which is made of oxide. For this reason, the present invention provides a second layer on the upper side that is made of metal and is difficult to trim.
The trimming pulse light is not irradiated from the electrode side, but is performed from the glass substrate side after forming the second electrode, the semiconductor, and the second electrode.

Examples thereof will be described below with reference to the drawings.

In Figure 1, a semiconductor (]-
) are the substrate (2), the first electrode (3), PN or P-N
Non-single crystal semiconductor doped with hydrogen or... rogen element having at least one junction or heterojunction (4) For example, P-type Si XCp, ((0<x< 1) I
Semiconductor consisting of type 5i-N type (μC-3i) 0.4~
It has a thickness of 0.6μ. In addition, in the case of a heterojunction, the first electrode is CTF-X type semiconductor-N type (μC
-8i). Further, on this upper surface, a second electrode (5), that is, a metal electrode, is arranged at Or (500-20
For example, ITO (900-1
zooX) +AI (500~10000x) 10N1
(1000-4000λ) There are many options. After producing this photoelectric conversion device, a He-Ne laser beam (8
), 0, 1 to 1 in the photoelectric conversion device with
If foreign matter with a size of 0 μm is present during or before the process, the semiconductor layer or electrode will not be formed in this area and will be destroyed.

In other words, a recess is formed. It has also been found that if these foreign substances remain, they form convex portions 9, and as a result, the pair of upper and lower electrodes are electrically connected at the boundary with the foreign matter or at the concave portions, resulting in leaks or short circuits. Therefore, this defective point is detected by the detector α3 from the external extraction electrodes (6) and (7) connected to the two electrodes (2), (4), and the signal is controlled by the microcomputer 04. A YAG laser (9)K is applied, and this laser gives a trimming light average output of 1 to IOW (for example, an output of 5 W),
The defective portion is evaporated and removed by irradiation light of 30 to 50 .mu.' from the trimming laser .alpha.2 through the nof mirror 10 and the mirror 0+).

Visible light of 30 to 100 μt, such as a He-Ne laser or an Ar laser (8), was used to detect defective locations.

In this way, the defective areas were laser trimmed.

FIG. 2 shows in detail the trimming or scribing device shown in FIG. 1 in a vertical sectional view.

In drawing (A), a transparent glass was used as the substrate (2), and a defective portion 04 was detected by scanning with visible laser light 0. PVO (1) has a transparent first electrode (3) a non-single-crystal semiconductor (4) on a substrate (2), and a second electrode (e.g. semiconductor) with a thickness of 900 to 1300λ, e.g. 1050^. To
A thin layer of CTF consisting of CTF and A1 to which Ksi or chromium was added was used. For contact with the external extraction electrodes (6) and (7), a multilayer film of KNi''!1 or A1+Ni may be formed thereon to a thickness of 0.5 to 1.5 μm) (5).

In α→ of drawing (A), the first and second electrodes (3) and (5)
This becomes a defective point where a leakage current flows and becomes a cause of deterioration of the characteristics of the photoelectric conversion device.
We detected locations where the output (open-circuit voltage or current value of 0.5 to 0°6) was degraded by a factor of 30 to 60 or more compared to a predetermined value. Furthermore, here K YAG laser spot (50μ
)), and the semiconductor and the upper electrode were evaporated and removed as shown in FIG. 2(B)K.

At this time, as shown in Figure 2, with the transparent substrate on the upper side, the electrode (
5) was placed on the bottom side. It is important to first heat the inside of the stacked electrodes and semiconductor with a laser beam, and then remove the second electrode on the surface in a jetting manner. In particular, when the inside is heated, the semiconductor in this portion becomes melted or vaporized, and the second electrode (5) can be removed as if by cutting.

On the other hand, if the device (]) is placed in the opposite direction, the second electrode (metal) is first irradiated with the laser light. The thermal energy of the laser beam is then thermally conducted in the lateral direction of the electrode, resulting in a process that primarily involves melting the metal, with no vaporization process. As a result, it was found that at this leakage point, the second electrode and the first electrode were likely to come into contact with the beans and form an alloy.

That is, as in the present invention, there are two thin film electrodes and a 0.3~
For semiconductors with a so-called Sandwich-like +14 structure, in which an extremely thin semiconductor layer of 0.7 μm is formed, it is important to use a method that evaporates heat energy internally using double laser light and then blows it off in an instant. found.

Thus, the side surface or surface (c) of the semiconductor (4) is exposed.

Although not shown below, the pvc (→
This entire surface (silicon nitride insulator Q1) was
The coating was applied to a thickness of ~2,000 mm to form a coating film. This is 200% by plasma vapor phase method.
Formation was performed at ~350°C, typically 280°C. Furthermore, 1 to 3 coats of polyimide resin is applied to this upper surface. The coating was applied to the thickness of the glass to improve moisture resistance and prevent leakage current on the side of the first layer between the PNs at this trimmed portion.

In FIG. 2, a scribing process is shown for area a9. In other words, when trying to divide a large-area semiconductor device into many small-area devices rather than a defective part, especially when trying to divide it after the upper and lower electrodes and semiconductors have been formed, the laser beam is irradiated from the translucent substrate side, and this + is applied.By doing this, for example, the 20cm x 40cm device (1) can be irradiated with a 1cm
X5cmC photoelectric conversion device or 1cmX5~8mm
It is now possible to divide the area into smaller areas.

Although this figure shows one cross section, in this scribing process, it is necessary to remove each part including the first electrode Dv, so the pulsed light of the YAG laser was set to be as large as 8 to 12 W.

As described above, in the PVOυ of the present invention, at least the electrode on the side opposite to the substrate is removed in spots inside the PVOυ, and defective points such as leaks and short circuits between two opposing electrodes are removed. In the past, the production yield was only 30 to 40 inches, but by correcting this defect, when trying to make a board for the conversion device, it is necessary to combine six 2 When printing practical applications such as combining 4 sheets of 20x60cm,
We were able to more than double the yield of each panel, the manufacturing cost of this board was ~500 DW, and the conversion efficiency of the board was 10~1% = 4%. The efficiency can be reduced to 10-4.6%, which is extremely good in terms of efficiency.

Furthermore, in the present invention, in order to further increase the success rate of laser trimming or scribing, a second
It is important to use OTF (transparent conductive film), for example, ITO with a thickness of 700 to 130 OA, and cover the soil with a metal electrode, rather than using only metal as the electrode. In this way, the trimming yield was 90% in the case of electrodes only, but it became possible to increase this to 99.98% (7 defects in lcf' spot). This is extremely important industrially, and is thought to be due to the fact that by interposing an oxide such as ITO, the thermal energy of the pulsed light irradiation can be vaporized and removed in an instant. It will be done.

From a board with a size of 60cm x 20cm], cmX
If you try to make solar cells for a 5cm calculator, you can make 240 of them at once. Further, within this cell, five cells of 9 mm x 8 mm are electrically connected in series, and the present invention makes it possible to separate these cells. In this way, compared to the conventional mask method, this scribe line is 30 to 60μ on the use side.
Because it is so thin that it cannot be seen with the naked eye, it has greatly increased its commercial value.

In the present invention, a YAG laser was used as a trimming laser. However, it is also possible to use a CO laser or the like.

[Brief explanation of drawings]

FIG. 1 schematically shows a laser trimming device of the present invention. FIG. 2 shows a laser-trimmed photoelectric conversion device of the present invention. l hong figure 1

Claims (1)

[Claims] 1. A first electrode made of a transparent conductive film on a transparent substrate and a non-single crystal provided on the electrode by a laser trimming or scribing device capable of irradiating pulsed light for trimming. In a manufacturing method for trimming or scribing a photoelectric conversion device having a semiconductor layer and a conductive second electrode of the semi-dedicated layered soil, by irradiating pulsed light from the transparent substrate side, 147) A method for producing a photoelectric conversion device, characterized in that trimming or scribing is performed by removing the front electrode, the semiconductor under the electrode, the second electrode and the semiconductor under the electrode, and the 147th electric wire. . 2. In claim 1, the second electrode on the semiconductor is provided with a two-layer structure of a transparent conductive film on the semiconductor and a metal film on the film. A method for manufacturing a photoelectric conversion device.