JPS63315593A - Liquid epitaxial growth apparatus - Google Patents

Abstract

PURPOSE:To enable easy and sure growth of crystal without fixing a substrate with a supporting tool and a melt, by using a substrate-supporting tool having a specific structure and supporting a supporting plate and a substrate, fitting the supporting tool with a columnar member inscribed in a quartz tube and carrying out epitaxial growth of a crystal on the substrate. CONSTITUTION:A substrate-supporting tool 111 is composed of a bottom plate 13 having a threaded hole 12 and a frame 17 fixed to three circumferential sides of the bottom plate 13. A groove 16 for holding a substrate 14, etc., is formed on the inner circumference of the frame 17. A substrate 14 and a supporting plate 15 are inserted into the substrate-supporting tool 11 facing the supporting plate 15 to the threaded hole and pressed and fixed to the frame 17 with a screw 18 screwed into the threaded hole 12. The assembled substrate-supporting tool 11 is inserted into fitting grooves 4 (corresponding to the substrate-supporting tool 5 and the substrate 6 in the figure) formed on the opposite faces 3 of a columnar member 2 worked in the form of U and inscribed in a quartz tube 1. After charging a source material 7, the quartz tube 1 is evacuated and the end part A is sealed while pushing the member 2 with a pushing jig 8 composed of a quartz rod. The quartz tube 1 is put into a furnace, melted with heat and rotated 180 deg. along the arrow B to effect the crystal growth of the molten material 7 on the substrate 14.

Description

Detailed Description of the Invention [Summary] A tilted liquid phase epitaxial growth apparatus comprising: a cylindrical member having a groove on opposing surfaces into which a substrate and a substrate support are stacked and fitted; and a cylindrical member into which the cylindrical member is inserted. and an epitaxial layer forming material filled in the sealed tube at a position facing the substrate, and the substrate support is fixed to a bottom plate provided with a screw hole and a peripheral edge of the flat plate member. a frame-shaped part having a rectangular shape with one side missing and having a groove provided on the inner peripheral surface into which the board is inserted; and a support plate on which the board is placed and inserted into the groove of the frame-shaped part. , a screw passes through the bottom plate and presses and fixes the support plate to the frame-shaped part together with the substrate, so that the melt after epitaxial growth enters between the substrate and the support plate, and the substrate and the support plate are fixed together. This eliminates the problem of the board cracking or becoming unable to be removed from the support plate.

[Industrial application field]

The present invention relates to a tilted liquid phase epitaxial growth apparatus, and more particularly to a substrate support that prevents melt from entering between the substrate and the substrate support after epitaxial growth, thereby preventing the substrate and the substrate support from becoming fixed together.

Water/cadmium/tellurium crystals with narrow energy band gaps are used for infrared detection elements and photoelectric conversion elements such as infrared laser elements.

When such Hg+□Cd, ITe crystals are epitaxially grown on a cadmium telluride (CdTe) 71= plate, since mercury is a material that evaporates easily, a sealed tube with a sealed structure is used to prevent evaporation of mercury. Molten HBr-*
Cd. A tilted liquid phase epitaxial growth apparatus, which forms an epitaxial layer on a substrate by bringing a Te melt into contact with the substrate, is widely used because the apparatus is simple and the growth rate of the epitaxial layer is fast.

In such an epitaxial growth apparatus, there is a demand for an epitaxial growth apparatus having a structure in which a substrate after epitaxial growth does not adhere to a substrate support on which the substrate is placed.

[Conventional technology]

Such a conventional liquid phase epitaxial growth apparatus will be explained using a cross-sectional view in FIG. 3 and a perspective view in FIG. 4.

As shown in FIG. 3, inside a heat-resistant bottomed quartz tube 1, a quartz columnar member 2 is processed into a U-shape so as to be inscribed in the quartz tube l. A groove 4 is provided in the facing surface 3 processed into a letter shape, and a substrate support 5 made of quartz and a substrate 6 made of CdTe for epitaxial growth shown in FIG. 4 are fitted into the groove 4. Set up. This substrate support 5 has a structure in which a frame portion 5B made of quartz is welded onto the peripheral edge of a flat plate member 5 made of quartz, and the height h of this frame portion 5B is equal to the thickness of the substrate 6. The substrate 6 is processed so as to have the same height and is installed on the flat plate member 5A.

Then, as shown in FIG. 3, a source material 7 of mercury, cadmium, and tellurium for epitaxial growth is placed at a position facing the substrate support 5, and the mercury, cadramylum, and tellurium are weighed so that each has a predetermined weight. After filling the source material 7 and the cylindrical member 2 into the quartz tube 1, the inside of the quartz tube 1 is evacuated, and the substrate 6 and the substrate support 5 are placed in a cylindrical shape using a holding jig 8 made of a quartz rod. While pressing the member 2 against one end of the quartz tube 1, the other end A of the quartz tube 1 is sealed.

Next, the quartz tube 1 is inserted into a heating furnace (not shown), the temperature of the heating furnace is raised to a temperature of 500 to 550°C, and the source material 7 is melted.
is rotated 180 degrees along the direction of arrow B, the molten source material 7 is deposited on the substrate 6, and epitaxial crystals of the components of the source material 7 are formed on the substrate 1 while lowering the temperature of the heating furnace with a constant temperature gradient. I was trying to form it.

[Problem that the invention seeks to solve]

However, in such a conventional apparatus, the melt of the molten source material enters between the substrate support 5 and the substrate 6 through the groove 4, and the substrate 6 and the substrate support 5 are fixed by the melt solidified after epitaxial growth. If they do not separate, the substrate 6 may be distorted, it may be difficult to remove the substrate 6 from the substrate support 5, and in extreme cases, the substrate may crack, causing problems in epitaxial growth operations.

The present invention aims to eliminate the above-mentioned problems and provide a liquid phase epitaxial growth apparatus in which a substrate and a substrate support are not stuck together by solidified melt.

[Means for solving problems]

A liquid phase epitaxial growth apparatus of the present invention that achieves the above objects includes a cylindrical member having a groove on opposing surfaces into which a substrate and a substrate support are stacked and fitted, and a sealed tube into which the cylindrical member is inserted. and an epitaxial layer forming material filled in a sealed tube at a position facing the substrate, in which the substrate support is attached to a bottom plate provided with a screw hole and peripheral edges on three sides of the bottom plate. A frame-like member that is fixed and has a groove on its inner peripheral surface into which the board is inserted, a support plate on which the board is placed and inserted into the groove of the frame-like member, and a screw provided on the bottom plate. A screw passes through the hole and presses and fixes the support plate and the substrate to the frame member.

[Function] In the epitaxial growth apparatus of the present invention, a substrate support for supporting a substrate is provided on a bottom plate with a screw hole and a peripheral edge of this bottom plate, and one side of the square is missing, and the substrate is inserted into the inner peripheral surface. a frame-like member provided with a groove in which the substrate is placed, a support plate on which the substrate is placed and inserted into the groove of the frame-like member, and the support plate is penetrated from the bottom to fix the substrate to the frame-like member. By pressing and fixing the support plate to the frame-like member together with the substrate using the screws, a gap is prevented from forming between the support plate and the substrate, and the melted material is prevented between the substrate and the support plate. Prevent melt from entering.

〔Example〕

Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a perspective view of a substrate support used in the liquid phase epitaxial growth apparatus of the present invention, and FIG. 2 is a sectional view taken along line nn' in FIG. 1.

As shown in FIGS. 1 and 2, the substrate support 11 in the liquid phase epitaxial growth apparatus of the present invention has a screw hole 12.
A groove 16 is provided at the periphery of the bottom plate 13 and into which a substrate 14 and a support plate 15 on which the substrate 14 is placed are inserted.
The frame member 17 is made of quartz and has a rectangular shape with one side missing.

After inserting the substrate 14 placed on the substrate support plate 15 into the groove 16 of such a substrate support 11, the quartz screws 18 are fitted into the screw holes 12 of the bottom plate 13, and then fastened. . Then, the screws 18 press the support plate 15 together with the substrate 14 against the substrate support 11, and the support plate 15 and the substrate 1
The molten melt will no longer enter between the substrate 1 and the substrate 1.
4 and the support plate 15 are no longer stuck together, the grown substrate 14 can be easily taken out from the substrate support 11, and accidents such as cracking of the substrate are eliminated, and the work yield is improved.

〔Effect of the invention〕

As described above, according to the liquid phase epitaxial growth apparatus of the present invention, the substrate and the substrate support are not fixed together by molten melt, making the epitaxial growth operation easy and reliable.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a substrate support of the liquid phase epitaxial growth apparatus of the present invention, FIG. 2 is a sectional view taken along line nn' in FIG. 1, and FIG. 3 is a perspective view of a conventional liquid phase epitaxial growth apparatus. FIG. 4 is a perspective view of a conventional substrate support. In the figure, 11 is a substrate support, 12 is a screw hole, 13 is a bottom plate, 14 is a substrate, 15 is a support plate, 16 is a groove, 17 is a frame, and 18 is a screw. Figure 1 of the dud-exposure - the traces of the horns and hawks Fig. 2 G-Kan/I-Kaibakusen Fig. 3 Conventional outer moat 1. ．． Hashiibe Figure 4

Claims (1)

[Claims] A cylindrical member (2) having a groove (4) on an opposing surface (3) into which an epitaxial growth substrate (6) and a substrate support (5) are fitted, and into which the cylindrical member is inserted. A growth apparatus comprising a sealed tube (1) and an epitaxial layer forming material (7) filled in the sealed tube, wherein the substrate support (11) has a bottom plate (12) provided with a screw hole (12). 13), a frame-shaped part (17) fixed to the periphery of the three sides of the bottom plate and having a groove (16) on the inner peripheral surface into which the board (14) is inserted; a support plate (15) to be placed and inserted into the groove (16) of the frame-shaped part (17);
and a screw (18) that passes through a screw hole (12) provided in the bottom plate (13) and presses and fixes the support plate (15) together with the substrate (14) to the frame-shaped part (17). A liquid phase epitaxial growth apparatus characterized by: