JPS6321577Y2 - - Google Patents
Info
- Publication number
- JPS6321577Y2 JPS6321577Y2 JP1983063187U JP6318783U JPS6321577Y2 JP S6321577 Y2 JPS6321577 Y2 JP S6321577Y2 JP 1983063187 U JP1983063187 U JP 1983063187U JP 6318783 U JP6318783 U JP 6318783U JP S6321577 Y2 JPS6321577 Y2 JP S6321577Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate holder
- substrate
- ring
- holding ring
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 83
- 239000002994 raw material Substances 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】
本考案は液相エピタキシヤル(LPE)膜成長
用基板ホルダに関するものである。[Detailed Description of the Invention] The present invention relates to a substrate holder for liquid phase epitaxial (LPE) film growth.
近年、大面積単結晶基板への成長が可能で、か
つ量産性に飛んだ液相エピタキシヤル(LPEと
略称する)膜成長装置の開発が望まれている。 In recent years, there has been a desire to develop a liquid phase epitaxial (LPE) film growth system that is capable of growing large-area single-crystal substrates and is highly capable of mass production.
従来、化合物半導体のLPE膜成長装置として
は横型多層スライド式装置が広く用いられてい
る。このような横型多層スライド式成長装置の場
合、成長可能な基板の大きさは、せいぜい20×20
mm角程度の四角い基板しか使用できず、それ以上
の大面積基板へ、成分比、厚さの均一な結晶膜を
成長させることは困難であつた。 Conventionally, a horizontal multilayer sliding type device has been widely used as an LPE film growth device for compound semiconductors. In the case of such a horizontal multilayer sliding growth device, the size of the substrate that can be grown is at most 20 × 20
Only square substrates of about mm square can be used, and it has been difficult to grow crystal films with uniform component ratios and thicknesses on larger substrates.
このような事態に鑑み、本考案者らは、実願昭
58−5511号出願において、基板を回転させること
の可能な縦型炉を使用したLPE膜成長装置を考
案した。このような装置においては、大直径の基
板上に成分比、厚さの均一な成長を行うことので
きるという利点がある反面、成長が一枚毎のバツ
チ製造であるため、量産化における低コストを実
現出来ないという欠点があつた。 In view of this situation, the inventors of the present invention
In the application No. 58-5511, an LPE film growth apparatus using a vertical furnace capable of rotating the substrate was devised. This type of equipment has the advantage of being able to grow a substrate with a uniform composition ratio and thickness on a large-diameter substrate, but on the other hand, since the growth is done in batches one by one, it reduces costs for mass production. The drawback was that it was not possible to achieve this.
本考案は上述の点に鑑みなされたもので、複数
の大面積基板上に同時にエピタキシヤル層を形成
しうるLPE膜成長用基板ホルダを提供すること
を目的とする。 The present invention was developed in view of the above points, and an object of the present invention is to provide a substrate holder for LPE film growth that can simultaneously form epitaxial layers on a plurality of large-area substrates.
本考案を概説すれば、本考案による液相エピタ
キシヤル膜成長用基板ホルダは、基板ホルダ支持
軸に取りつけるための取付部が設けられた基板ホ
ルダ本体と、保持リングと、この基板ホルダ本体
と保持リング間に螺合挟着される少なくとも1以
上の中間保持リングとを有し、前記中間保持リン
グは基板ホルダ本体、中間保持リングあるいは保
持リングとの間に基板を挟持可能となつていると
ともに、前記基板に原料融液を接触可能なように
開放部を形成していることを特徴とするものであ
る。 To summarize the present invention, the substrate holder for liquid phase epitaxial film growth according to the present invention includes a substrate holder body provided with a mounting portion for attaching to the substrate holder support shaft, a retaining ring, the substrate holder body and the retaining ring. and at least one or more intermediate holding rings that are screwed together and held between the rings, and the intermediate holding ring is capable of holding the substrate between the substrate holder main body, the intermediate holding ring, or the holding ring, and The present invention is characterized in that an open portion is formed so that the raw material melt can come into contact with the substrate.
以下、本考案の一実施例を図面に基づき説明す
る。 Hereinafter, one embodiment of the present invention will be described based on the drawings.
第1図は液相エピタキシヤル成長装置の概略を
示す断面概略図であり、図中、1は反応管、2は
原料融液を保持するルツボ、3は基板、4は基板
ホルダ、5は回転上下可能な基板ホルダ支持軸で
ある。 FIG. 1 is a schematic cross-sectional view showing the outline of a liquid phase epitaxial growth apparatus. In the figure, 1 is a reaction tube, 2 is a crucible for holding a raw material melt, 3 is a substrate, 4 is a substrate holder, and 5 is a rotating This is a substrate holder support shaft that can be moved up and down.
この第1図より明らかなように、エピタキシヤ
ル成長装置は、反応管1の内部に結晶原料融液を
保持するルツボ2を設置するとともに、このルツ
ボ2の上部に前記ルツボ中の原料融液に接触させ
て成長膜を形成させる基板3を支持する基板ホル
ダ4が設けられ、この基板ホルダ4は回転及び上
下動可能な基板ホルダ支持軸5に連結している。 As is clear from FIG. 1, the epitaxial growth apparatus includes a crucible 2 that holds a crystal raw material melt inside a reaction tube 1, and a crucible 2 that holds a crystal raw material melt in the upper part of the crucible 2. A substrate holder 4 is provided that supports a substrate 3 that is brought into contact with it to form a grown film, and this substrate holder 4 is connected to a substrate holder support shaft 5 that is rotatable and movable up and down.
このような装置において、エピタキシヤル成長
膜を成長せしめるには、前記基板ホルダ支持軸5
を回転させながら下降させ、基板ホルダ4に設置
された基板3に原料融液を接触させることによつ
て行われる。 In such an apparatus, in order to grow an epitaxially grown film, the substrate holder support shaft 5 is
This is carried out by rotating and lowering the substrate 3 to bring the raw material melt into contact with the substrate 3 placed on the substrate holder 4.
このような成長装置に用いられる本考案による
基板ホルダの一実施例を第2〜第5図に示す。図
中、40は基板ホルダ本体、41は基板ホルダ支
持部、42は基板保持リングを示す。 An embodiment of the substrate holder according to the present invention used in such a growth apparatus is shown in FIGS. 2 to 5. In the figure, 40 is a substrate holder main body, 41 is a substrate holder support part, and 42 is a substrate holding ring.
第2図及び第3図より明らかなように、基板ホ
ルダ4は、円盤状の基板ホルダ本体40とこの基
板ホルダ本体40の中心軸に垂設された基板ホル
ダ支持部41、およびこの基板ホルダ本体40に
螺着される保持リング42よりなつており、前記
保持リング42と基板ホルダ本体40間に基板3
が挟着されて、前記基板3が基板ホルダ4に保持
されるようになつている。 As is clear from FIGS. 2 and 3, the substrate holder 4 includes a disk-shaped substrate holder main body 40, a substrate holder support portion 41 vertically disposed on the central axis of the substrate holder main body 40, and a substrate holder main body 40. 40, and the substrate 3 is held between the retaining ring 42 and the substrate holder main body 40.
are sandwiched between them, so that the substrate 3 is held by the substrate holder 4.
基板ホルダ本体40は、第2図より明らかなよ
うに、その円周部分に螺条溝が設けられ、一方の
保持リング42の内壁にこれと対応する螺条溝が
形成され、相互に螺合するようになつている。 As is clear from FIG. 2, the substrate holder main body 40 is provided with a threaded groove on its circumferential portion, and a corresponding threaded groove is formed on the inner wall of one of the retaining rings 42, so that they can be screwed together. I'm starting to do that.
基板ホルダ支持部41は基板ホルダ支持軸5に
設けられた係合ピン50と係合し、基板ホルダ支
持軸5と連結するための係合溝410が穿設され
ており、この係合溝410と係合ピン50によつ
て、両者は装脱自在になつている。 The substrate holder support part 41 is formed with an engagement groove 410 for engaging with an engagement pin 50 provided on the substrate holder support shaft 5 and connecting with the substrate holder support shaft 5. Both can be freely attached and detached by the engagement pin 50.
前記保持リング42は、基板3を後述の中間保
持リング423との間に保持しえるように円周部
分に4個の止め爪420(第3図参照)を有して
いる。 The holding ring 42 has four retaining claws 420 (see FIG. 3) on its circumference so that the substrate 3 can be held between it and an intermediate holding ring 423, which will be described later.
第4図は本考案による基板ホルダの一実施例の
断面図であり、図中、31,32,33は基板、
421,422は中間保持リング、423は保持
リングを示している。 FIG. 4 is a sectional view of an embodiment of the substrate holder according to the present invention, in which 31, 32, 33 are substrates;
421 and 422 are intermediate holding rings, and 423 is a holding ring.
この実施例においては、基板ホルダ4は複数の
中間保持リング421および422を有してい
る。この中間保持リング421及び422は、基
板本体40あるいは中間保持リング自身と螺着す
るための螺条溝の穿設された上部螺条部43、保
持リングないし中間保持リングに螺着するための
螺条溝の穿設された下部螺条部44を有し、前記
上部螺条部43の下部に基板31,32等を保持
する基板保持台45が形成されているとともに、
前記保持台45の側部には開放部46が設けら
れ、原料融液が基板31,32等に接触するよう
になつている。 In this embodiment, the substrate holder 4 has a plurality of intermediate retaining rings 421 and 422. The intermediate retaining rings 421 and 422 include an upper threaded portion 43 having a threaded groove for screwing with the substrate body 40 or the intermediate retaining ring itself, and a threaded portion 43 for screwing with the retaining ring or the intermediate retaining ring. It has a lower threaded portion 44 with grooves, and a substrate holding stand 45 for holding the substrates 31, 32, etc. is formed below the upper threaded portion 43, and
An opening 46 is provided on the side of the holding table 45 so that the raw material melt comes into contact with the substrates 31, 32, etc.
このような中間保持リング421の基板保持台
45に基板31を載置し、上部螺条部43におい
て基板ホルダ本体40と螺合すると、基板31は
基板ホルダ本体40と中間保持リング421とで
挟持されることとなる。同様に、中間保持リング
422の保持台45に基板32を載置し、前記中
間保持リング421の下部螺条部44と他の中間
保持リング422の上部螺条部43を螺合するこ
とによつて基板32は保持されることになる。こ
のように、中間保持リング421,422を積層
することによつて、複数の基板を保持しえるよう
になる。このような中間保持リングは、保持台4
5の側部に開放部46を有しているので、前記の
ように基板31,32を積層しても、原料融液は
有効に前記基板31,32と接触する。 When the substrate 31 is placed on the substrate holding base 45 of such an intermediate holding ring 421 and screwed onto the substrate holder main body 40 at the upper threaded portion 43, the substrate 31 is held between the substrate holder main body 40 and the intermediate holding ring 421. It will be done. Similarly, by placing the substrate 32 on the holding stand 45 of the intermediate holding ring 422 and screwing together the lower threaded portion 44 of the intermediate holding ring 421 and the upper threaded portion 43 of the other intermediate holding ring 422, Thus, the substrate 32 is held. By stacking the intermediate holding rings 421 and 422 in this manner, it becomes possible to hold a plurality of substrates. Such an intermediate holding ring is attached to the holding base 4.
Since the open portion 46 is provided on the side of the substrate 5, the raw material melt effectively contacts the substrates 31, 32 even if the substrates 31, 32 are stacked as described above.
このように中間保持リング421,422を螺
合積層したのち、さらに基板33を保持リング4
23と中間保持リング422間に挟持せしめる。 After the intermediate holding rings 421 and 422 are screwed and stacked in this way, the substrate 33 is further attached to the holding ring 4.
23 and the intermediate holding ring 422.
前述の中間保持リングは、基板の数に応じて1
個、2個あるいはそれ以上積層させることができ
る。すなわち、中間保持リングの数は本考案にお
いて限定されるものではない。 The aforementioned intermediate retaining ring is 1 depending on the number of substrates.
They can be stacked in layers, two or more. That is, the number of intermediate retaining rings is not limited in the present invention.
前記のような、基板ホルダ40に保持された基
板をルツボ2に保持される原料融液に接触させる
ことによつて、複数の基板に同時にエピタキシヤ
ル成長膜を基板上に成長させることがかのうにな
るものである。 By bringing the substrate held in the substrate holder 40 into contact with the raw material melt held in the crucible 2 as described above, it is possible to simultaneously grow epitaxial growth films on a plurality of substrates. It is what it is.
なお、前記基板ホルダの材質は、基本的に限定
されるものではない。例えば、黒鉛、窒化ボロ
ン、窒化シリコンなどのセラミツクスや石英ガラ
スなどを適宜使用できる。 Note that the material of the substrate holder is not fundamentally limited. For example, ceramics such as graphite, boron nitride, silicon nitride, quartz glass, etc. can be used as appropriate.
以上説明したように、本考案による基板ホルダ
は複数個の大面積基板を保持可能であり、これら
の基板上に同時に成長層を成長させることができ
るので、化合物半導体太陽電池等の製造に用いれ
ば、きわめて有用である。 As explained above, the substrate holder according to the present invention can hold a plurality of large-area substrates, and growth layers can be simultaneously grown on these substrates, so it can be used for manufacturing compound semiconductor solar cells, etc. , extremely useful.
第1図は液相エピタキシヤル成長装置の概略断
面図、第2図は本考案の一実施例の側断面図、第
3図は前記実施例の第2図におけるA方向よりの
矢視図、第4図は前記実施例の構成を説明するた
めの斜視図、第5図は前記実施例の中間保持リン
グの斜視図である。
1……反応管、2……ルツボ、3……基板、4
……基板ホルダ、5……支持軸、40……基板ホ
ルダ本体、42……保持リング、421,422
……中間保持リング。
FIG. 1 is a schematic sectional view of a liquid phase epitaxial growth apparatus, FIG. 2 is a side sectional view of an embodiment of the present invention, and FIG. 3 is a view of the embodiment as seen from the direction of arrow A in FIG. FIG. 4 is a perspective view for explaining the structure of the embodiment, and FIG. 5 is a perspective view of the intermediate holding ring of the embodiment. 1... Reaction tube, 2... Crucible, 3... Substrate, 4
... Substrate holder, 5 ... Support shaft, 40 ... Substrate holder main body, 42 ... Retaining ring, 421, 422
...Intermediate retaining ring.
Claims (1)
設けられた基板ホルダ本体と、保持リングと、こ
の基板ホルダ本体と保持リング間に螺合挟着され
る少なくとも1以上の中間保持リングとを有し、
前記中間保持リングは基板ホルダ本体、中間保持
リングあるいは保持リングとの間に基板を挟持可
能となつているとともに、前記基板に原料融液を
接触可能なように開放部を形成していることを特
徴とする液相エピタキシヤル膜成長用基板ホル
ダ。 It has a substrate holder body provided with a mounting part for attachment to the substrate holder support shaft, a retaining ring, and at least one or more intermediate retaining rings screwed and sandwiched between the substrate holder body and the retaining ring,
The intermediate holding ring is capable of holding the substrate between the substrate holder main body, the intermediate holding ring, or the holding ring, and has an open portion so that the raw material melt can come into contact with the substrate. A substrate holder for liquid-phase epitaxial film growth.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6318783U JPS59169370U (en) | 1983-04-27 | 1983-04-27 | Substrate holder for liquid phase epitaxial film growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6318783U JPS59169370U (en) | 1983-04-27 | 1983-04-27 | Substrate holder for liquid phase epitaxial film growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59169370U JPS59169370U (en) | 1984-11-13 |
JPS6321577Y2 true JPS6321577Y2 (en) | 1988-06-14 |
Family
ID=30193379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6318783U Granted JPS59169370U (en) | 1983-04-27 | 1983-04-27 | Substrate holder for liquid phase epitaxial film growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59169370U (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015198213A (en) * | 2014-04-03 | 2015-11-09 | 新日鐵住金株式会社 | Method of manufacturing epitaxial silicon carbide wafer, and holde for silicon carbide single cristal substrate used for the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5114051U (en) * | 1974-07-18 | 1976-02-02 |
-
1983
- 1983-04-27 JP JP6318783U patent/JPS59169370U/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5114051U (en) * | 1974-07-18 | 1976-02-02 |
Also Published As
Publication number | Publication date |
---|---|
JPS59169370U (en) | 1984-11-13 |
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