JPS61201419A - Apparatus for manufacture of semiconductor - Google Patents

Abstract

PURPOSE:To protect a substrate surface from contamination caused by welding material when the substrate is stuck on a substrate holder with the welding material by a method wherein a protruded part with a diameter smaller than the substrate diameter is provided on the substrate holder. CONSTITUTION:A protruded part 2a provided on a substrate holder 2 is approximately 1mm in height and, if a substrate 1 is circular, preferrably 2mm smaller in diameter than the substrate 1. Indium 3 is applied on the surface of the protruded part 3a only and the substrate 1 is stuck on the indium 3. Therefore, when the welding material is melted, it is covered by the back side of the substrate 1 and does not evaporate directly toward the surface of the substrate 1 and hence the surface of the substrate 1 can be protected from contamination caused by the indium 3 as possible. As the substrate holder 2 is larger than the substrate 2, the temperature gradient produced in such a way that the temperature of the circumference part of the substrate 1 is lower than that of the other part because of the heat radiation from the circumference is avoided and hence the substrate 1 can be heated uniformly.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention is applicable to semiconductor manufacturing equipment, especially molecular beam epitaxy (MBE)! ! This paper relates to improvements to substrate holders used in equipment such as equipment.

[Conventional technology]

The conventional semiconductor manufacturing equipment in this building will be explained with reference to FIG. FIG. 2 is a side view of the substrate affixed onto the substrate holder. In FIG. 2, 1 is a substrate, for example, a GaAS
No. 5 is a semiconductor substrate on which epitaxial growth is performed. 2 is a substrate holder to which the substrate 1 is attached.

This is usually made of molybdenum. Reference numeral 3 denotes a welding material for pasting the board 1 to the substrate holder 2, and indium is usually used.

In such a substrate 10 and substrate holder 2, (1) the substrate 1 must be uniformly heated by /Jl;

- It is necessary to be able to handle substrates 1 having different shapes and sizes.

Q) The size of the substrate holder 2 must be fixed for convenience of transportation.

For these reasons, it is necessary to attach the substrate holder 2, which is larger than the substrate &1, using a welding material such as indium 3.

[Problem that the invention seeks to solve]

However, in addition to pasting indium 3 on the conventional substrate holder 2, the substrate 1 is bonded while sliding on the substrate holder 2 in order to fully adapt the indium 3 to the substrate 1 and the substrate holder 2. , problems such as indium 3 slipping onto the parts of the substrate holder 2 where the substrate 1 is not placed, and the excess indium 3 evaporating during growth and contaminating the vacuum chamber of the growth apparatus. was there.

The present invention has been made to solve these problems, and an object of the present invention is to provide a 5K semiconductor manufacturing apparatus that allows good epitaxial growth on a substrate.

[Failure to solve the problem]

In the semiconductor manufacturing apparatus according to the present invention, a convex portion smaller than the substrate is provided on the substrate holder, and the substrate is attached to the convex portion.

[Effect]

In this invention, when the substrate is placed on the convex portion of the substrate holder, the substrate is larger than the convex portion, so the melting layer material used for pasting the substrate does not protrude to other parts. During epitaxial growth, the protruding melt layer material will not evaporate and contaminate the inside of the vacuum chamber of the growth apparatus.

〔Example〕

FIG. 1 is a side view showing an embodiment of the present invention. In this figure, 1, 2.3 are the same as those in FIG. 2, and 2a is a convex portion provided on the substrate holder 2.

In this way, the height of the convex portion 2a is about 1TIm, and the size is 2 TIm in diameter compared to the substrate 1 if the substrate 1 is circular.
It is desirable that the degree of mycorrhiza is low. As shown in FIG. 1, K and indium 3 are applied only to the surface of the convex portion 2a, and the base &1 is pasted thereon. By doing this, even if the molten layer material is exposed, it will be covered with the back surface of the substrate 1 and will not evaporate directly toward the surface of the substrate 10, thereby preventing the surface of the substrate 10 from being contaminated by indium 3. This can be prevented as much as possible. In addition, since the substrate holder 2 is larger than the base &1, it is possible to prevent the substrate 1 from having a temperature R distribution where only the peripheral part becomes slightly lower in temperature due to heat dissipation from the surroundings while the substrate 1 is being heated. 1 can be heated uniformly.

Although the above embodiments have been described using a substrate holder used in a molecular beam epitaxy apparatus as an example, it goes without saying that the present invention can also be applied to other semiconductor manufacturing apparatuses of this type.

〔Effect of the invention〕

As explained above, in this invention, a convex portion having a smaller diameter than the substrate is provided on the upper surface of the substrate holder, so that when the welding layer material is attached to the substrate holder, it is possible to suppress the contamination of the substrate surface by the welding layer material. The effect of achieving good film growth can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a side view showing an embodiment of the present invention, and FIG. 2 is a side view showing a conventional semiconductor manufacturing apparatus. In the figure, 1 is a substrate, 2 is a substrate holder, 2a is a convex part,
3 is indium. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Diagram 1 1: Substrate 2: Substrate holder 2a: Convex portion 3: Indium Diagram 2 Procedural Amendment (voluntary) Showa Year, Month, Day

Claims (1)

[Claims] In a semiconductor manufacturing apparatus in which a semiconductor substrate is pasted onto a substrate holder using a welding material, a substrate holder having a diameter larger than that of the semiconductor substrate is used, a convex portion having a smaller diameter than the semiconductor substrate is provided on the substrate holder, and the convex portion A semiconductor manufacturing device, characterized in that the semiconductor substrate is pasted thereon.